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FPS40N50L-VB Product details
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1. FPS40N50L-VB MOSFET Product Introduction
FPS40N50L-VB is a high-performance single N-channel MOSFET in TO3P package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of 600V, the device has good high voltage tolerance and is suitable for scenarios such as high voltage power conversion and motor control. The gate-source voltage (VGS) range is ±30V, allowing gate drive over a wide range. The threshold voltage (Vth) of this MOSFET is 3.5V, which enables stable conduction at a reasonable gate voltage. The on-resistance (RDS(ON)) of FPS40N50L-VB is 60mΩ, and it can provide a drain current of 47A at a VGS of 10V. The device uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which has low conduction loss and efficient current transmission capability, making it very suitable for high-efficiency power conversion and high-power drive applications.
FPS40N50L-VB is a high-performance single N-channel MOSFET in TO3P package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of 600V, the device has good high voltage tolerance and is suitable for scenarios such as high voltage power conversion and motor control. The gate-source voltage (VGS) range is ±30V, allowing gate drive over a wide range. The threshold voltage (Vth) of this MOSFET is 3.5V, which enables stable conduction at a reasonable gate voltage. The on-resistance (RDS(ON)) of FPS40N50L-VB is 60mΩ, and it can provide a drain current of 47A at a VGS of 10V. The device uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which has low conduction loss and efficient current transmission capability, making it very suitable for high-efficiency power conversion and high-power drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description of FPS40N50L-VB MOSFET
1. **Package**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Low, suitable for high-efficiency switching applications
11. **Switching speed**: Fast switching, suitable for high frequency applications
12. **Drain-source diode reverse recovery time (trr)**: Short, suitable for high frequency circuits
1. **Package**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Low, suitable for high-efficiency switching applications
11. **Switching speed**: Fast switching, suitable for high frequency applications
12. **Drain-source diode reverse recovery time (trr)**: Short, suitable for high frequency circuits
Domain and module applications：
3. Application fields and module examples of FPS40N50L-VB MOSFET
1. **High-efficiency switching power supply (SMPS)**:
- FPS40N50L-VB is very suitable for the design of high-efficiency switching power supply, especially in applications with high-voltage input power supply or strict power management. Its high drain-source voltage of 600V and low on-resistance enable it to provide efficient power conversion under high voltage conditions and reduce switching losses.
2. **Photovoltaic inverter**:
- In the photovoltaic inverter, FPS40N50L-VB can effectively handle the high voltage generated by the photovoltaic cell array and convert it into AC power for grid or home use. Its high voltage tolerance and low on-resistance ensure that the inverter can operate efficiently and stably, providing stable power output.
3. **Industrial motor drive**:
- FPS40N50L-VB plays an important role in industrial motor drive systems, especially in scenarios where high voltage and high current need to be handled. Its 47A drain current capability and 600V high voltage withstand capability enable it to drive high-power motors and remain efficient and stable when the load changes.
4. **Power Converters**:
- In scenarios where efficient power conversion is required, such as high-voltage DC power converters, the FPS40N50L-VB is able to provide efficient current transmission and low switching losses. Its fast switching speed and low on-resistance make it an ideal choice in power converters.
FPS40N50L-VB MOSFET is widely used in high-voltage, high-efficiency power conversion and industrial drive fields through its high voltage withstand capability, low on-resistance and strong current handling capability, ensuring stable operation of equipment under high load and high frequency conditions.
1. **High-efficiency switching power supply (SMPS)**:
- FPS40N50L-VB is very suitable for the design of high-efficiency switching power supply, especially in applications with high-voltage input power supply or strict power management. Its high drain-source voltage of 600V and low on-resistance enable it to provide efficient power conversion under high voltage conditions and reduce switching losses.
2. **Photovoltaic inverter**:
- In the photovoltaic inverter, FPS40N50L-VB can effectively handle the high voltage generated by the photovoltaic cell array and convert it into AC power for grid or home use. Its high voltage tolerance and low on-resistance ensure that the inverter can operate efficiently and stably, providing stable power output.
3. **Industrial motor drive**:
- FPS40N50L-VB plays an important role in industrial motor drive systems, especially in scenarios where high voltage and high current need to be handled. Its 47A drain current capability and 600V high voltage withstand capability enable it to drive high-power motors and remain efficient and stable when the load changes.
4. **Power Converters**:
- In scenarios where efficient power conversion is required, such as high-voltage DC power converters, the FPS40N50L-VB is able to provide efficient current transmission and low switching losses. Its fast switching speed and low on-resistance make it an ideal choice in power converters.
FPS40N50L-VB MOSFET is widely used in high-voltage, high-efficiency power conversion and industrial drive fields through its high voltage withstand capability, low on-resistance and strong current handling capability, ensuring stable operation of equipment under high load and high frequency conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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