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FPS38N60L-VB Product details

Product introduction:

1. FPS38N60L-VB Product Introduction

FPS38N60L-VB is a high-voltage single-channel N-type MOSFET with a TO3P package type, designed for high-power applications. Its maximum drain-source voltage (VDS) is 600V, and the drain current (ID) can reach up to 47A, which is suitable for power control and conversion in high-voltage environments. This MOSFET adopts advanced SJ_Multi-EPI technology, providing excellent electrical performance and lower on-resistance. At a gate-source voltage (VGS) of 10V, the on-resistance (RDS(ON)) of the FPS38N60L-VB is 60mΩ. This combination enables the device to perform well in high-voltage and high-power applications while maintaining low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 47A 60mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
2. FPS38N60L-VB Detailed parameter description

1. **Package type**: TO3P
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
7. **Drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI

Domain and module applications:

3. Application fields and module examples of FPS38N60L-VB

The high voltage, high current capability and low on-resistance characteristics of FPS38N60L-VB MOSFET make it perform well in the following fields and modules:

1. **Switching Power Supply (SMPS)**: In switching power supplies, especially power modules for high-power applications such as server power supplies and industrial power systems, FPS38N60L-VB can be used as a key power switching device, which can efficiently handle high-voltage DC, reduce conversion losses, and improve the overall efficiency of the system.

2. **Motor Controller**: In high-voltage motor drive control systems, this MOSFET can be used to drive high-power motors, especially in industrial automation and electric vehicle drive systems. Its high voltage and high current handling capabilities ensure the stability and efficiency of motor operation.

3. **Photovoltaic Inverter**: FPS38N60L-VB is very suitable for use in inverter modules in photovoltaic power generation systems. It can effectively convert the direct current generated by solar panels into alternating current, and minimize energy loss through efficient switching characteristics.

4. **Electric vehicle charging equipment**: In the fast charging station of electric vehicles, this MOSFET can be used in the DC fast charging module to handle high voltage input, ensure safety and efficiency during the charging process, and shorten the charging time.

The high voltage and high current characteristics of the FPS38N60L-VB MOSFET make it an ideal choice for handling high-power and high-voltage applications, and are widely used in power conversion, industrial control and new energy fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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