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FPF40-VB Product details
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Product Introduction
FPF40-VB is a high voltage single N-channel MOSFET in TO247 package, designed to handle high voltage, low current applications. It has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide an on-resistance (RDS(ON)) of 1500mΩ and a maximum drain current (ID) of 5A. The threshold voltage (Vth) is 3.5V, which enables the FPF40-VB to maintain stable performance under extreme high voltage conditions, and is suitable for applications that require high voltage resistance.
FPF40-VB is a high voltage single N-channel MOSFET in TO247 package, designed to handle high voltage, low current applications. It has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide an on-resistance (RDS(ON)) of 1500mΩ and a maximum drain current (ID) of 5A. The threshold voltage (Vth) is 3.5V, which enables the FPF40-VB to maintain stable performance under extreme high voltage conditions, and is suitable for applications that require high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
The high voltage withstand characteristics of the FPF40-VB MOSFET make it very suitable for applications that require extremely high voltage handling. It performs well in high-voltage DC-DC converters (DC-DC converters), especially for use in high-voltage transmission lines or industrial power management systems. In addition, this MOSFET can also provide reliable switching functions in high-voltage inverters and power electronic equipment, especially in applications that require effective management of high-voltage inputs. The FPF40-VB is also suitable for protection circuits in power distribution networks to ensure safe operation of circuits in high-voltage environments while reducing energy losses. In these high-voltage applications, the FPF40-VB MOSFET can ensure system stability and efficiency.
The high voltage withstand characteristics of the FPF40-VB MOSFET make it very suitable for applications that require extremely high voltage handling. It performs well in high-voltage DC-DC converters (DC-DC converters), especially for use in high-voltage transmission lines or industrial power management systems. In addition, this MOSFET can also provide reliable switching functions in high-voltage inverters and power electronic equipment, especially in applications that require effective management of high-voltage inputs. The FPF40-VB is also suitable for protection circuits in power distribution networks to ensure safe operation of circuits in high-voltage environments while reducing energy losses. In these high-voltage applications, the FPF40-VB MOSFET can ensure system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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