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FP470-VB Product details
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1. FP470-VB Product Introduction
FP470-VB is a high-voltage, high-current single-channel N-type MOSFET in TO247 package. This MOSFET is designed to handle high voltage environments of 500V and can withstand drain currents (ID) of up to 40A. FP470-VB uses SJ_Multi-EPI technology, which provides superior voltage breakdown capability and improved thermal performance, allowing the device to maintain an on-resistance of 80mΩ (@ VGS=10V) under high voltage conditions. This feature enables FP470-VB to excel in high-power, high-voltage applications, effectively performing switch control and improving overall system efficiency and reliability.
FP470-VB is a high-voltage, high-current single-channel N-type MOSFET in TO247 package. This MOSFET is designed to handle high voltage environments of 500V and can withstand drain currents (ID) of up to 40A. FP470-VB uses SJ_Multi-EPI technology, which provides superior voltage breakdown capability and improved thermal performance, allowing the device to maintain an on-resistance of 80mΩ (@ VGS=10V) under high voltage conditions. This feature enables FP470-VB to excel in high-power, high-voltage applications, effectively performing switch control and improving overall system efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FP470-VB Detailed parameter description
1. **Package type**: TO247
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
1. **Package type**: TO247
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
Domain and module applications：
III. Examples of FP470-VB applicable fields and modules
The high voltage and high current characteristics of FP470-VB MOSFET make it widely used in multiple fields and modules:
1. **Power inverter**: In the inverter of photovoltaic or wind power generation system, FP470-VB can handle high voltage DC input and effectively convert it into AC output, which is suitable for large-scale power generation system and improves energy conversion efficiency.
2. **Industrial power supply**: In industrial power supply modules, such as high voltage DC power supply and switching power supply, FP470-VB can be used as a switching element to handle high voltage and high current loads, provide stable power supply, and reduce energy loss of the system.
3. **Electric vehicle charging system**: In electric vehicle charging device, this MOSFET can handle high voltage DC current, ensure stability and efficiency during charging, and is suitable for fast charging and high power charging systems.
4. **High-voltage switchgear**: In applications requiring high-voltage switching, such as high-voltage converters and protection devices, the high voltage handling capability and low on-resistance of the FP470-VB make it an ideal switching element to ensure reliable operation of the system.
With its excellent high-voltage, high-current performance and low on-resistance, the FP470-VB MOSFET is suitable for handling a variety of high-power, high-voltage applications, ensuring the efficiency and reliability of the system.
The high voltage and high current characteristics of FP470-VB MOSFET make it widely used in multiple fields and modules:
1. **Power inverter**: In the inverter of photovoltaic or wind power generation system, FP470-VB can handle high voltage DC input and effectively convert it into AC output, which is suitable for large-scale power generation system and improves energy conversion efficiency.
2. **Industrial power supply**: In industrial power supply modules, such as high voltage DC power supply and switching power supply, FP470-VB can be used as a switching element to handle high voltage and high current loads, provide stable power supply, and reduce energy loss of the system.
3. **Electric vehicle charging system**: In electric vehicle charging device, this MOSFET can handle high voltage DC current, ensure stability and efficiency during charging, and is suitable for fast charging and high power charging systems.
4. **High-voltage switchgear**: In applications requiring high-voltage switching, such as high-voltage converters and protection devices, the high voltage handling capability and low on-resistance of the FP470-VB make it an ideal switching element to ensure reliable operation of the system.
With its excellent high-voltage, high-current performance and low on-resistance, the FP470-VB MOSFET is suitable for handling a variety of high-power, high-voltage applications, ensuring the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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