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FP460N-VB Product details

Product introduction:

1. FP460N-VB Product Introduction

FP460N-VB is a high-voltage, high-current carrying capacity N-channel MOSFET in TO247 package, designed for high-power and high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 500V, the gate-source voltage (VGS) range is ±30V, and the turn-on voltage (Vth) is 3.8V. The on-resistance (RDS(ON)) of FP460N-VB is 80mΩ (@VGS=10V), and it can support a maximum drain current (ID) of 40A. Using SJ_Multi-EPI technology, FP460N-VB has excellent performance under high voltage and high current conditions, and is suitable for various power management systems and switching applications that require high efficiency and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. FP460N-VB Detailed parameter description

- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI technology
- **Power consumption**: With low conduction loss and good thermal management performance
- **Package size**: TO247 package provides excellent heat dissipation performance and mechanical strength
- **Operating temperature range**: Suitable for a wide range of industrial and power system environments

Domain and module applications:

3. Application fields and module examples of FP460N-VB

The high voltage and high current handling capabilities of FP460N-VB MOSFET make it suitable for a variety of high-power applications. The following are some typical application fields and module examples:

1. **High-voltage power converter**: The 500V maximum drain-source voltage of FP460N-VB makes it very suitable for high-voltage power converters, such as AC-DC converters and high-voltage DC-DC converters. It can handle high voltage input and large current output, ensuring efficient power conversion and stable power output.

2. **Electric vehicle (EV) drive system**: In the motor drive system of electric vehicles, the high current capability and low on-resistance of FP460N-VB make it an ideal choice. It can be used for motor control and power regulation to improve the driving efficiency and overall performance of electric vehicles.

3. **High-power switching circuit**: FP460N-VB performs well in high-power switching circuits, such as in power conversion equipment and load control systems. Its low on-resistance and high voltage capability provide reliable switching efficiency for applications requiring high power and high performance.

4. **Solar Inverter**: In solar inverters, FP460N-VB can be used for high voltage DC to AC conversion. Its high voltage and high current handling capabilities can help improve the energy conversion efficiency and system stability of solar systems.

These application examples show that FP460N-VB has significant advantages in high voltage and high power environments, and can meet various high performance and high reliability power system needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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