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FP460B-VB Product details
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Product Introduction
FP460B-VB is a high voltage, high current single N-channel power MOSFET in TO247 package. Designed for high power, high voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.8V, the on-resistance (RDS(ON)) is 80mΩ @ VGS=10V, and the maximum drain current (ID) is 40A. FP460B-VB uses SJ (super junction) multi-epitaxial technology, which improves switching performance and on-resistance characteristics, making it suitable for high-efficiency power conversion and management applications.
FP460B-VB is a high voltage, high current single N-channel power MOSFET in TO247 package. Designed for high power, high voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.8V, the on-resistance (RDS(ON)) is 80mΩ @ VGS=10V, and the maximum drain current (ID) is 40A. FP460B-VB uses SJ (super junction) multi-epitaxial technology, which improves switching performance and on-resistance characteristics, making it suitable for high-efficiency power conversion and management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: SJ (super junction) multi-epitaxial (Multi-EPI)
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: SJ (super junction) multi-epitaxial (Multi-EPI)
Domain and module applications：
Applications and modules
FP460B-VB MOSFET is suitable for multiple high-power and high-efficiency applications due to its high withstand voltage, high current capability and excellent switching performance, including:
1. **High-voltage switching power supply**: FP460B-VB can handle high voltages of 500V in high-voltage switching power supplies, suitable for efficient power conversion and switching tasks. Its low on-resistance helps reduce power loss and improve the overall efficiency and stability of the power supply.
2. **Uninterruptible power supply (UPS)**: In UPS systems, FP460B-VB can be used for high-voltage conversion and rectification tasks. Its high withstand voltage and low on-resistance can provide a reliable power backup solution to ensure stable operation of the system during power outages.
3. **Motor drive system**: FP460B-VB is suitable for high-voltage motor drive systems. Its high current handling capability and low on-resistance enable it to effectively drive high-power motors and optimize motor control performance and system response speed.
4. **Power Inverter**: In solar inverters and other high-power inverters, FP460B-VB provides efficient DC to AC conversion capabilities. Its high voltage tolerance and low on-resistance can improve the overall performance and energy efficiency of the inverter.
With its high voltage handling capability and excellent switching performance, FP460B-VB is suitable for power management and power conversion applications that require high current and high efficiency, providing a reliable solution for modern electronic devices and systems.
FP460B-VB MOSFET is suitable for multiple high-power and high-efficiency applications due to its high withstand voltage, high current capability and excellent switching performance, including:
1. **High-voltage switching power supply**: FP460B-VB can handle high voltages of 500V in high-voltage switching power supplies, suitable for efficient power conversion and switching tasks. Its low on-resistance helps reduce power loss and improve the overall efficiency and stability of the power supply.
2. **Uninterruptible power supply (UPS)**: In UPS systems, FP460B-VB can be used for high-voltage conversion and rectification tasks. Its high withstand voltage and low on-resistance can provide a reliable power backup solution to ensure stable operation of the system during power outages.
3. **Motor drive system**: FP460B-VB is suitable for high-voltage motor drive systems. Its high current handling capability and low on-resistance enable it to effectively drive high-power motors and optimize motor control performance and system response speed.
4. **Power Inverter**: In solar inverters and other high-power inverters, FP460B-VB provides efficient DC to AC conversion capabilities. Its high voltage tolerance and low on-resistance can improve the overall performance and energy efficiency of the inverter.
With its high voltage handling capability and excellent switching performance, FP460B-VB is suitable for power management and power conversion applications that require high current and high efficiency, providing a reliable solution for modern electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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