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FP460A-VB Product details
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Product Introduction
FP460A-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, the MOSFET uses advanced SJ_Multi-EPI technology to provide an on-resistance (RDS(ON)) of 80mΩ and a maximum drain current (ID) of 40A. The threshold voltage (Vth) is 3.8V, which gives the FP460A-VB good switching performance and stability under high voltage conditions.
FP460A-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, the MOSFET uses advanced SJ_Multi-EPI technology to provide an on-resistance (RDS(ON)) of 80mΩ and a maximum drain current (ID) of 40A. The threshold voltage (Vth) is 3.8V, which gives the FP460A-VB good switching performance and stability under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON)）**: 80mΩ@VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON)）**: 80mΩ@VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
The high withstand voltage and high current characteristics of the FP460A-VB MOSFET make it suitable for a variety of high-power applications. For example, in high-voltage DC-DC converters (DC-DC converters), it is able to handle high voltage inputs, ensuring stable power conversion and high efficiency. In addition, it is also very suitable for use in high-voltage power management systems, such as battery management in power electronics systems and electric vehicles (EVs). FP460A-VB can also be used in solar inverters, high-power switching power supplies (SMPS), and other occasions that require high voltage and high current processing. In these applications, the MOSFET is able to maintain stable performance under high voltage and high current conditions and effectively reduce energy loss.
The high withstand voltage and high current characteristics of the FP460A-VB MOSFET make it suitable for a variety of high-power applications. For example, in high-voltage DC-DC converters (DC-DC converters), it is able to handle high voltage inputs, ensuring stable power conversion and high efficiency. In addition, it is also very suitable for use in high-voltage power management systems, such as battery management in power electronics systems and electric vehicles (EVs). FP460A-VB can also be used in solar inverters, high-power switching power supplies (SMPS), and other occasions that require high voltage and high current processing. In these applications, the MOSFET is able to maintain stable performance under high voltage and high current conditions and effectively reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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