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FP450N-VB Product details
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1. FP450N-VB Product Introduction
FP450N-VB is a high voltage, high current single channel N-type MOSFET in TO247 package. This MOSFET is designed for high voltage environment of 500V and can handle drain current (ID) up to 40A. FP450N-VB adopts SJ_Multi-EPI technology, which gives it superior breakdown voltage capability and improved thermal performance. The on-resistance of this MOSFET at 10V gate-source voltage is 80mΩ, ensuring efficient switching performance and low energy loss in high voltage applications.
FP450N-VB is a high voltage, high current single channel N-type MOSFET in TO247 package. This MOSFET is designed for high voltage environment of 500V and can handle drain current (ID) up to 40A. FP450N-VB adopts SJ_Multi-EPI technology, which gives it superior breakdown voltage capability and improved thermal performance. The on-resistance of this MOSFET at 10V gate-source voltage is 80mΩ, ensuring efficient switching performance and low energy loss in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FP450N-VB Detailed parameter description
1. **Package type**: TO247
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
1. **Package type**: TO247
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
Domain and module applications：
III. Examples of FP450N-VB application fields and modules
The high voltage and high current characteristics of FP450N-VB MOSFET make it suitable for the following fields and modules:
1. **Power inverter**: In solar photovoltaic inverters and wind power inverters, FP450N-VB can handle high voltage DC input and convert it into AC output, suitable for high power generation systems, improving the energy efficiency and stability of the system.
2. **Industrial power supply**: In high voltage switching power supplies and industrial power modules, this MOSFET can efficiently switch high voltage loads, ensure the stability and reliability of the power system, and is suitable for various industrial applications such as power supply and power conversion equipment.
3. **Electric vehicle charging device**: In the charging system of electric vehicles, FP450N-VB can be used for high voltage DC charging, ensuring high efficiency and safety during the charging process, suitable for fast charging and high power charging stations.
4. **High-voltage switchgear**: In applications requiring high-voltage switching, such as high-voltage DC circuit breakers and protection equipment, the high voltage withstand capability and low on-resistance of the FP450N-VB make it an ideal switching element to ensure efficient and reliable operation of the system.
The high voltage, high current capability and low on-resistance characteristics of the FP450N-VB MOSFET make it an ideal choice for handling high-power, high-voltage applications, which can effectively improve the overall performance and reliability of the system.
The high voltage and high current characteristics of FP450N-VB MOSFET make it suitable for the following fields and modules:
1. **Power inverter**: In solar photovoltaic inverters and wind power inverters, FP450N-VB can handle high voltage DC input and convert it into AC output, suitable for high power generation systems, improving the energy efficiency and stability of the system.
2. **Industrial power supply**: In high voltage switching power supplies and industrial power modules, this MOSFET can efficiently switch high voltage loads, ensure the stability and reliability of the power system, and is suitable for various industrial applications such as power supply and power conversion equipment.
3. **Electric vehicle charging device**: In the charging system of electric vehicles, FP450N-VB can be used for high voltage DC charging, ensuring high efficiency and safety during the charging process, suitable for fast charging and high power charging stations.
4. **High-voltage switchgear**: In applications requiring high-voltage switching, such as high-voltage DC circuit breakers and protection equipment, the high voltage withstand capability and low on-resistance of the FP450N-VB make it an ideal switching element to ensure efficient and reliable operation of the system.
The high voltage, high current capability and low on-resistance characteristics of the FP450N-VB MOSFET make it an ideal choice for handling high-power, high-voltage applications, which can effectively improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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