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FP450B-VB Product details
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1. FP450B-VB Product Introduction
FP450B-VB is a high-voltage, high-current carrying capacity N-channel MOSFET in TO3P package. This MOSFET has a maximum drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V, which can meet the needs of high-voltage and high-power applications. The turn-on voltage (Vth) of FP450B-VB is 3.5V, the on-resistance (RDS(ON)) is 280mΩ (@VGS=10V), and it supports a maximum drain current (ID) of 15A. It adopts SJ_Multi-EPI technology, which optimizes the conductivity and switching characteristics of MOSFET, so that it can work stably in high voltage and high current environments. The TO3P package design provides good heat dissipation capability and structural strength, and is suitable for a variety of power management and switching applications requiring high performance and high reliability.
FP450B-VB is a high-voltage, high-current carrying capacity N-channel MOSFET in TO3P package. This MOSFET has a maximum drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V, which can meet the needs of high-voltage and high-power applications. The turn-on voltage (Vth) of FP450B-VB is 3.5V, the on-resistance (RDS(ON)) is 280mΩ (@VGS=10V), and it supports a maximum drain current (ID) of 15A. It adopts SJ_Multi-EPI technology, which optimizes the conductivity and switching characteristics of MOSFET, so that it can work stably in high voltage and high current environments. The TO3P package design provides good heat dissipation capability and structural strength, and is suitable for a variety of power management and switching applications requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. FP450B-VB Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology type**: SJ_Multi-EPI technology
- **Power consumption**: With low conduction loss and good thermal management performance
- **Package size**: TO3P package provides excellent heat dissipation performance and mechanical strength
- **Operating temperature range**: Suitable for various industrial and power system environments
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology type**: SJ_Multi-EPI technology
- **Power consumption**: With low conduction loss and good thermal management performance
- **Package size**: TO3P package provides excellent heat dissipation performance and mechanical strength
- **Operating temperature range**: Suitable for various industrial and power system environments
Domain and module applications：
III. Application fields and module examples of FP450B-VB
The high voltage and high current handling capabilities of the FP450B-VB MOSFET make it very suitable for the following fields and modules:
1. **High voltage power converter**: The 600V maximum drain-source voltage of the FP450B-VB makes it suitable for high voltage power converters, such as AC-DC converters and high voltage DC-DC converters. In these applications, it is able to handle high voltage input and large current output, achieving efficient power conversion and stable power output.
2. **Motor drive system**: In motor drive systems, the high current carrying capacity and low on-resistance of the FP450B-VB make it an ideal choice. It can be used for motor control and power regulation to improve the efficiency and reliability of motor drives, especially in applications that need to handle high voltage and medium current.
3. **High power switching circuit**: The FP450B-VB performs well in high power switching circuits, such as power conversion equipment and load control systems. Its high voltage capability and low on-resistance provide reliable switching performance for applications requiring high power and high efficiency.
4. **Solar Inverter**: In solar inverters, the FP450B-VB can be used for high voltage DC to AC conversion. The high voltage and high current handling capabilities of the MOSFET help improve energy conversion efficiency and ensure the stability and performance of solar energy systems.
These application examples show the strong capabilities of the FP450B-VB in high voltage and high power environments, meeting the needs of power systems and switching applications that require high performance and reliability.
The high voltage and high current handling capabilities of the FP450B-VB MOSFET make it very suitable for the following fields and modules:
1. **High voltage power converter**: The 600V maximum drain-source voltage of the FP450B-VB makes it suitable for high voltage power converters, such as AC-DC converters and high voltage DC-DC converters. In these applications, it is able to handle high voltage input and large current output, achieving efficient power conversion and stable power output.
2. **Motor drive system**: In motor drive systems, the high current carrying capacity and low on-resistance of the FP450B-VB make it an ideal choice. It can be used for motor control and power regulation to improve the efficiency and reliability of motor drives, especially in applications that need to handle high voltage and medium current.
3. **High power switching circuit**: The FP450B-VB performs well in high power switching circuits, such as power conversion equipment and load control systems. Its high voltage capability and low on-resistance provide reliable switching performance for applications requiring high power and high efficiency.
4. **Solar Inverter**: In solar inverters, the FP450B-VB can be used for high voltage DC to AC conversion. The high voltage and high current handling capabilities of the MOSFET help improve energy conversion efficiency and ensure the stability and performance of solar energy systems.
These application examples show the strong capabilities of the FP450B-VB in high voltage and high power environments, meeting the needs of power systems and switching applications that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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