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FP360-VB Product details
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1. FP360-VB Product Introduction
FP360-VB is a high voltage, high current single channel N-type MOSFET in TO247 package. The device is designed for high voltage, high power applications, with a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A. FP360-VB adopts SJ_Multi-EPI technology, which can provide higher breakdown voltage and better thermal performance. The MOSFET has a low on-resistance of 80mΩ at a gate-source voltage of 10V, which enables it to maintain low energy loss and high switching efficiency under high voltage operation.
FP360-VB is a high voltage, high current single channel N-type MOSFET in TO247 package. The device is designed for high voltage, high power applications, with a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A. FP360-VB adopts SJ_Multi-EPI technology, which can provide higher breakdown voltage and better thermal performance. The MOSFET has a low on-resistance of 80mΩ at a gate-source voltage of 10V, which enables it to maintain low energy loss and high switching efficiency under high voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FP360-VB Detailed parameter description
1. **Package type**: TO247
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
1. **Package type**: TO247
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
Domain and module applications：
III. Examples of FP360-VB application fields and modules
FP360-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current characteristics:
1. **Power inverter**: In high voltage power inverters, such as solar photovoltaic inverters or wind power inverters, FP360-VB is able to handle high voltage DC input and convert it into stable AC output, improving system efficiency and ensuring long-term stable operation.
2. **High voltage switching power supply**: In high voltage switching power supply (SMPS), FP360-VB's high withstand voltage characteristics and low on-resistance enable it to efficiently switch high voltage loads, suitable for high voltage power supply modules such as industrial power supply and communication equipment power supply.
3. **Electric vehicle charging system**: In electric vehicle charging stations, FP360-VB can be used in high voltage DC charging systems to ensure efficient and safe charging process through its high voltage and high current handling capabilities.
4. **Industrial Controller**: In industrial controllers and high-power motor drives, FP360-VB can be used as a switching element to control high-voltage loads, ensuring system reliability and stability.
FP360-VB MOSFET demonstrates its strong performance in high-voltage and high-power applications, making it an ideal choice for many demanding electronic systems.
FP360-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current characteristics:
1. **Power inverter**: In high voltage power inverters, such as solar photovoltaic inverters or wind power inverters, FP360-VB is able to handle high voltage DC input and convert it into stable AC output, improving system efficiency and ensuring long-term stable operation.
2. **High voltage switching power supply**: In high voltage switching power supply (SMPS), FP360-VB's high withstand voltage characteristics and low on-resistance enable it to efficiently switch high voltage loads, suitable for high voltage power supply modules such as industrial power supply and communication equipment power supply.
3. **Electric vehicle charging system**: In electric vehicle charging stations, FP360-VB can be used in high voltage DC charging systems to ensure efficient and safe charging process through its high voltage and high current handling capabilities.
4. **Industrial Controller**: In industrial controllers and high-power motor drives, FP360-VB can be used as a switching element to control high-voltage loads, ensuring system reliability and stability.
FP360-VB MOSFET demonstrates its strong performance in high-voltage and high-power applications, making it an ideal choice for many demanding electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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