中文
English
FP32N50K-VB Product details
Back to previous pageProduct introduction：
1. FP32N50K-VB MOSFET Product Introduction
FP32N50K-VB is a high-performance single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and is suitable for high-voltage applications. Its gate-source voltage (VGS) can withstand a maximum of ±30V, and the threshold voltage (Vth) is 3.8V. This MOSFET uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which significantly reduces the on-resistance and improves efficiency. The on-resistance (RDS(ON)) is 80mΩ at a gate voltage of 10V. The maximum continuous drain current (ID) is 40A, which can carry a large current load and is suitable for high-power applications.
FP32N50K-VB is a high-performance single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and is suitable for high-voltage applications. Its gate-source voltage (VGS) can withstand a maximum of ±30V, and the threshold voltage (Vth) is 3.8V. This MOSFET uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which significantly reduces the on-resistance and improves efficiency. The on-resistance (RDS(ON)) is 80mΩ at a gate voltage of 10V. The maximum continuous drain current (ID) is 40A, which can carry a large current load and is suitable for high-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FP32N50K-VB MOSFET detailed parameter description
1. **Package**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
7. **Drain current (ID)**: 40A
8. **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
9. **Junction temperature (Tj)**: Up to 150°C
10. **Switching speed**: Fast switching time, effectively reducing switching losses
11. **Input capacitance (Ciss)**: Medium input capacitance, suitable for fast switching applications
12. **Drain-source diode reverse recovery time (trr)**: Low reverse recovery time, suitable for high frequency applications
1. **Package**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
7. **Drain current (ID)**: 40A
8. **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
9. **Junction temperature (Tj)**: Up to 150°C
10. **Switching speed**: Fast switching time, effectively reducing switching losses
11. **Input capacitance (Ciss)**: Medium input capacitance, suitable for fast switching applications
12. **Drain-source diode reverse recovery time (trr)**: Low reverse recovery time, suitable for high frequency applications
Domain and module applications：
3. FP32N50K-VB MOSFET application areas and module examples
1. **Switching power supply (SMPS)**:
- In industrial-grade power supplies and telecommunications power supplies, this MOSFET is widely used in switch-mode power supplies due to its high voltage and high current carrying capacity. It can provide high-efficiency power conversion, reduce power consumption and improve reliability.
2. **Motor drive module**:
- This MOSFET is suitable for various motor drive modules, especially in electric vehicles and industrial automation. These applications require high voltage tolerance and low conduction loss to ensure efficient operation and long life of the drive.
3. **Solar inverter**:
- FP32N50K-VB is also commonly used in solar inverters, using its high voltage resistance and fast switching characteristics to improve overall efficiency in the DC to AC power conversion process.
4. **Uninterruptible Power Supply (UPS)**:
- Due to its excellent switching performance and high current handling capability, this MOSFET is also suitable for use in uninterruptible power supply systems to ensure continuous power supply to critical equipment during power outages.
FP32N50K-VB excels in applications requiring high performance and reliability, such as high-power switching, driving, and energy conversion systems.
1. **Switching power supply (SMPS)**:
- In industrial-grade power supplies and telecommunications power supplies, this MOSFET is widely used in switch-mode power supplies due to its high voltage and high current carrying capacity. It can provide high-efficiency power conversion, reduce power consumption and improve reliability.
2. **Motor drive module**:
- This MOSFET is suitable for various motor drive modules, especially in electric vehicles and industrial automation. These applications require high voltage tolerance and low conduction loss to ensure efficient operation and long life of the drive.
3. **Solar inverter**:
- FP32N50K-VB is also commonly used in solar inverters, using its high voltage resistance and fast switching characteristics to improve overall efficiency in the DC to AC power conversion process.
4. **Uninterruptible Power Supply (UPS)**:
- Due to its excellent switching performance and high current handling capability, this MOSFET is also suitable for use in uninterruptible power supply systems to ensure continuous power supply to critical equipment during power outages.
FP32N50K-VB excels in applications requiring high performance and reliability, such as high-power switching, driving, and energy conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
