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FP31N50L-VB Product details
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1. FP31N50L-VB Product Introduction
FP31N50L-VB is an advanced single N-channel MOSFET in TO247 package with high voltage and high current handling capabilities. It can withstand a drain-source voltage (VDS) of 500V, and a gate-source voltage (VGS) of ±30V. With its 3.8V threshold voltage (Vth) and low on-resistance (RDS(ON)@VGS=10V) of 80mΩ, the device performs well at a current of 40A. FP31N50L-VB uses super junction (SJ) multi-epitaxial (Multi-EPI) technology, which enables it to provide higher efficiency and reliability in high-voltage and high-current applications.
FP31N50L-VB is an advanced single N-channel MOSFET in TO247 package with high voltage and high current handling capabilities. It can withstand a drain-source voltage (VDS) of 500V, and a gate-source voltage (VGS) of ±30V. With its 3.8V threshold voltage (Vth) and low on-resistance (RDS(ON)@VGS=10V) of 80mΩ, the device performs well at a current of 40A. FP31N50L-VB uses super junction (SJ) multi-epitaxial (Multi-EPI) technology, which enables it to provide higher efficiency and reliability in high-voltage and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. FP31N50L-VB detailed parameter description
- **Model**: FP31N50L-VB
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Model**: FP31N50L-VB
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
3. Application fields and module examples
FP31N50L-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current handling capabilities:
1. **Power conversion module**: Due to its 500V drain-source voltage and low on-resistance, FP31N50L-VB is well suited for power conversion applications such as AC-DC and DC-DC converters. These applications require high efficiency and low losses, and the super junction technology of FP31N50L-VB ensures these requirements.
2. **Switching power supply (SMPS)**: FP31N50L-VB can be used in power factor correction (PFC) and main power switching parts in switch mode power supplies. Its 40A high current capability and low RDS(ON) make it excellent in efficient energy transfer.
3. **Motor driver**: This MOSFET is suitable for high power motor driver modules, especially those requiring high voltage and high current. FP31N50L-VB can effectively drive high-power motors while maintaining low power consumption and high reliability.
4. **Renewable energy systems**: In photovoltaic inverters and wind energy conversion systems, FP31N50L-VB can be used as a power switching device. Its high-voltage characteristics make it suitable for handling high-voltage currents obtained from solar panels or wind turbines, ensuring efficient power conversion.
Through the application of the above fields, FP31N50L-VB demonstrates its important role in high-voltage and efficient power transmission.
FP31N50L-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current handling capabilities:
1. **Power conversion module**: Due to its 500V drain-source voltage and low on-resistance, FP31N50L-VB is well suited for power conversion applications such as AC-DC and DC-DC converters. These applications require high efficiency and low losses, and the super junction technology of FP31N50L-VB ensures these requirements.
2. **Switching power supply (SMPS)**: FP31N50L-VB can be used in power factor correction (PFC) and main power switching parts in switch mode power supplies. Its 40A high current capability and low RDS(ON) make it excellent in efficient energy transfer.
3. **Motor driver**: This MOSFET is suitable for high power motor driver modules, especially those requiring high voltage and high current. FP31N50L-VB can effectively drive high-power motors while maintaining low power consumption and high reliability.
4. **Renewable energy systems**: In photovoltaic inverters and wind energy conversion systems, FP31N50L-VB can be used as a power switching device. Its high-voltage characteristics make it suitable for handling high-voltage currents obtained from solar panels or wind turbines, ensuring efficient power conversion.
Through the application of the above fields, FP31N50L-VB demonstrates its important role in high-voltage and efficient power transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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