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FP26N60L-VB Product details
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Product Introduction
FP26N60L-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The MOSFET has a drain-source voltage (VDS) of 650V, a maximum drain current (ID) of 20A, and an on-resistance (RDS(ON)) of 160mΩ at VGS=10V. Using SJ_Multi-EPI technology, FP26N60L-VB provides excellent switching performance and high voltage withstand capability, suitable for use in various power electronics applications.
FP26N60L-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The MOSFET has a drain-source voltage (VDS) of 650V, a maximum drain current (ID) of 20A, and an on-resistance (RDS(ON)) of 160mΩ at VGS=10V. Using SJ_Multi-EPI technology, FP26N60L-VB provides excellent switching performance and high voltage withstand capability, suitable for use in various power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Parameter Description
1. **Package Type**: TO247
The TO247 package is suitable for applications that require high power handling, provides good heat dissipation and mechanical stability, and is suitable for power switches and power modules.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration is suitable for various current switching and power management applications, especially in high voltage and high power scenarios.
3. **Drain-Source Voltage (VDS)**: 650V
The 650V drain-source voltage enables the FP26N60L-VB to handle medium and high voltage applications, suitable for power inverters, high voltage switches and other high voltage scenarios.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range provides designers with flexible drive circuit design options to ensure stable operation of the MOSFET.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be effectively turned on at moderate gate voltage, improving switching performance and efficiency.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
The 160mΩ on-resistance provides lower conduction losses in high current applications, helping to improve the overall efficiency of the system.
7. **Maximum Drain Current (ID)**: 20A
The 20A maximum drain current capability makes this MOSFET suitable for applications with medium current requirements, such as power switching and power regulation.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology improves the switching performance and voltage resistance of the MOSFET, provides lower on-resistance and better thermal performance, and is suitable for high voltage and high power applications.
1. **Package Type**: TO247
The TO247 package is suitable for applications that require high power handling, provides good heat dissipation and mechanical stability, and is suitable for power switches and power modules.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration is suitable for various current switching and power management applications, especially in high voltage and high power scenarios.
3. **Drain-Source Voltage (VDS)**: 650V
The 650V drain-source voltage enables the FP26N60L-VB to handle medium and high voltage applications, suitable for power inverters, high voltage switches and other high voltage scenarios.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range provides designers with flexible drive circuit design options to ensure stable operation of the MOSFET.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be effectively turned on at moderate gate voltage, improving switching performance and efficiency.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
The 160mΩ on-resistance provides lower conduction losses in high current applications, helping to improve the overall efficiency of the system.
7. **Maximum Drain Current (ID)**: 20A
The 20A maximum drain current capability makes this MOSFET suitable for applications with medium current requirements, such as power switching and power regulation.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology improves the switching performance and voltage resistance of the MOSFET, provides lower on-resistance and better thermal performance, and is suitable for high voltage and high power applications.
Domain and module applications：
Applicable fields and modules
1. **Power inverter**
FP26N60L-VB is very suitable for power inverter applications. Its high withstand voltage and high current handling capabilities enable it to efficiently handle current conversion, suitable for solar inverters, UPS systems and other power conversion equipment. It can withstand the high voltage and high current inversion process, ensuring the stability and reliability of the system.
2. **High-voltage switch**
In high-voltage switch applications, FP26N60L-VB can provide stable switching performance and reliable current handling capabilities. Suitable for high-voltage switch modules in power transmission and power management systems. Its high withstand voltage characteristics enable it to handle high current loads in high-voltage switch applications.
3. **Power conditioner**
FP26N60L-VB's low on-resistance and high current capability make it an ideal choice for power conditioners. In motor control and power conditioning modules, it can provide efficient switching and stable performance, suitable for a variety of industrial and consumer electronic devices.
4. **Power Electronics**
In power electronics, FP26N60L-VB provides reliable switching performance and high voltage withstand capability. Suitable for high-voltage power converters, inverters and other power electronic devices, it can effectively handle high voltage and high current power conversion processes.
5. **Electric Vehicle Power System**
The high voltage and high current capabilities of FP26N60L-VB make it suitable for the power system of electric vehicles. It can handle the high voltage and high current requirements in electric vehicle battery management and motor drive, ensuring the efficient and safe operation of the system.
6. **Industrial Power Management**
In industrial power management applications, FP26N60L-VB provides excellent current handling capability and high voltage withstand performance. Suitable for various industrial power switches and protection circuits, it can work stably under high voltage environment and improve the reliability and efficiency of the system.
FP26N60L-VB is suitable for power inverters, high voltage switches, power regulators, power electronics equipment, electric vehicle power systems and industrial power management through its high voltage and high current handling capabilities, providing reliable and efficient solutions for these applications.
1. **Power inverter**
FP26N60L-VB is very suitable for power inverter applications. Its high withstand voltage and high current handling capabilities enable it to efficiently handle current conversion, suitable for solar inverters, UPS systems and other power conversion equipment. It can withstand the high voltage and high current inversion process, ensuring the stability and reliability of the system.
2. **High-voltage switch**
In high-voltage switch applications, FP26N60L-VB can provide stable switching performance and reliable current handling capabilities. Suitable for high-voltage switch modules in power transmission and power management systems. Its high withstand voltage characteristics enable it to handle high current loads in high-voltage switch applications.
3. **Power conditioner**
FP26N60L-VB's low on-resistance and high current capability make it an ideal choice for power conditioners. In motor control and power conditioning modules, it can provide efficient switching and stable performance, suitable for a variety of industrial and consumer electronic devices.
4. **Power Electronics**
In power electronics, FP26N60L-VB provides reliable switching performance and high voltage withstand capability. Suitable for high-voltage power converters, inverters and other power electronic devices, it can effectively handle high voltage and high current power conversion processes.
5. **Electric Vehicle Power System**
The high voltage and high current capabilities of FP26N60L-VB make it suitable for the power system of electric vehicles. It can handle the high voltage and high current requirements in electric vehicle battery management and motor drive, ensuring the efficient and safe operation of the system.
6. **Industrial Power Management**
In industrial power management applications, FP26N60L-VB provides excellent current handling capability and high voltage withstand performance. Suitable for various industrial power switches and protection circuits, it can work stably under high voltage environment and improve the reliability and efficiency of the system.
FP26N60L-VB is suitable for power inverters, high voltage switches, power regulators, power electronics equipment, electric vehicle power systems and industrial power management through its high voltage and high current handling capabilities, providing reliable and efficient solutions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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