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FP260N-VB Product details
Back to previous pageProduct introduction：
1. FP260N-VB MOSFET Product Introduction
FP260N-VB is a high-performance N-channel MOSFET in TO-247 package, designed for medium-to-high voltage and high current applications. The MOSFET has a drain-source voltage of 200V, a gate-source voltage range of ±20V, and a turn-on voltage of 4V. Its on-resistance is 21mΩ at VGS=10V, and the drain current reaches 96A. FP260N-VB uses advanced Trench technology to provide excellent conductivity and low conduction losses, and is suitable for high-power power conversion, motor drive, and other applications requiring high current and high voltage.
FP260N-VB is a high-performance N-channel MOSFET in TO-247 package, designed for medium-to-high voltage and high current applications. The MOSFET has a drain-source voltage of 200V, a gate-source voltage range of ±20V, and a turn-on voltage of 4V. Its on-resistance is 21mΩ at VGS=10V, and the drain current reaches 96A. FP260N-VB uses advanced Trench technology to provide excellent conductivity and low conduction losses, and is suitable for high-power power conversion, motor drive, and other applications requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. FP260N-VB MOSFET Detailed parameter description
1. **Package type**: TO-247
- TO-247 package is used for high power applications, has good heat dissipation performance, and can effectively handle high power loss and high current.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for various switching and amplification applications. Its efficient switching characteristics and low conduction loss make it perform well under high current and high voltage.
3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage is 200V, making it suitable for applications handling medium voltages and can meet the requirements of most medium and high voltage circuits.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a gate-source voltage range of ±20V to ensure stable operation under different control conditions.
5. **Turn-on voltage (Vth)**: 4V
- The turn-on voltage is 4V, ensuring reliable turn-on at the appropriate gate voltage and reducing the complexity of the drive circuit.
6. **On-resistance (RDS(ON))**:
- **21mΩ @ VGS=10V**
- At VGS=10V, the on-resistance is 21mΩ, providing lower conduction losses and improving the overall efficiency of the power system.
7. **Drain current (ID)**: 96A
- The maximum drain current is 96A, capable of handling high current loads, suitable for high power applications.
8. **Technology type**: Trench technology
- Trench technology improves the performance of MOSFET by optimizing the channel structure, reducing the on-resistance, and is suitable for high power and high current applications.
1. **Package type**: TO-247
- TO-247 package is used for high power applications, has good heat dissipation performance, and can effectively handle high power loss and high current.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for various switching and amplification applications. Its efficient switching characteristics and low conduction loss make it perform well under high current and high voltage.
3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage is 200V, making it suitable for applications handling medium voltages and can meet the requirements of most medium and high voltage circuits.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a gate-source voltage range of ±20V to ensure stable operation under different control conditions.
5. **Turn-on voltage (Vth)**: 4V
- The turn-on voltage is 4V, ensuring reliable turn-on at the appropriate gate voltage and reducing the complexity of the drive circuit.
6. **On-resistance (RDS(ON))**:
- **21mΩ @ VGS=10V**
- At VGS=10V, the on-resistance is 21mΩ, providing lower conduction losses and improving the overall efficiency of the power system.
7. **Drain current (ID)**: 96A
- The maximum drain current is 96A, capable of handling high current loads, suitable for high power applications.
8. **Technology type**: Trench technology
- Trench technology improves the performance of MOSFET by optimizing the channel structure, reducing the on-resistance, and is suitable for high power and high current applications.
Domain and module applications：
III. FP260N-VB Application Fields and Module Examples
1. **High Power Power Conversion**:
- FP260N-VB is used as a switching element in high power power converters, such as DC-DC converters. Its high current carrying capacity and low on-resistance can effectively improve power conversion efficiency and reduce energy loss.
2. **Motor Drive System**:
- In motor drive applications, FP260N-VB can be used as a high current switch to control the drive current of the motor. Its high current carrying capacity and low conduction loss make it very suitable for industrial motor drive and electric vehicle drive systems.
3. **Power Inverter**:
- FP260N-VB can be used in power inverters to convert DC power to AC power. Its high voltage and high current capabilities, combined with low on-resistance, can improve the efficiency and reliability of the inverter.
4. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction circuit, FP260N-VB can help improve the power factor of the system. Its low on-resistance and high current capability ensure the efficient operation of the PFC circuit and improve the overall performance of the power supply.
5. **High Current Switching Application**:
- FP260N-VB is also suitable for other switching applications that require high current handling, such as battery management systems and switching control of high current loads. Its excellent switching characteristics and low on-resistance provide reliable performance.
These application examples show the wide applicability of FP260N-VB MOSFET in medium and high voltage and high current applications, and its efficient switching characteristics and low conduction losses make it an ideal choice for high power power supplies and drive systems.
1. **High Power Power Conversion**:
- FP260N-VB is used as a switching element in high power power converters, such as DC-DC converters. Its high current carrying capacity and low on-resistance can effectively improve power conversion efficiency and reduce energy loss.
2. **Motor Drive System**:
- In motor drive applications, FP260N-VB can be used as a high current switch to control the drive current of the motor. Its high current carrying capacity and low conduction loss make it very suitable for industrial motor drive and electric vehicle drive systems.
3. **Power Inverter**:
- FP260N-VB can be used in power inverters to convert DC power to AC power. Its high voltage and high current capabilities, combined with low on-resistance, can improve the efficiency and reliability of the inverter.
4. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction circuit, FP260N-VB can help improve the power factor of the system. Its low on-resistance and high current capability ensure the efficient operation of the PFC circuit and improve the overall performance of the power supply.
5. **High Current Switching Application**:
- FP260N-VB is also suitable for other switching applications that require high current handling, such as battery management systems and switching control of high current loads. Its excellent switching characteristics and low on-resistance provide reliable performance.
These application examples show the wide applicability of FP260N-VB MOSFET in medium and high voltage and high current applications, and its efficient switching characteristics and low conduction losses make it an ideal choice for high power power supplies and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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