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FP22N50A-VB Product details
Back to previous pageProduct introduction：
1. FP22N50A-VB MOSFET Product Introduction
FP22N50A-VB is a high-performance N-channel MOSFET in TO-247 package, designed for medium and high voltage, high current applications. The device has a drain-source voltage of 500V, a gate-source voltage range of 30V, and a turn-on voltage of 3.8V. Its on-resistance is 80mΩ at VGS=10V, and the maximum drain current is 40A. FP22N50A-VB uses advanced SJ_Multi-EPI technology, providing excellent conductivity and low conduction loss, and is widely used in high voltage power switches, inverters and other power control modules.
FP22N50A-VB is a high-performance N-channel MOSFET in TO-247 package, designed for medium and high voltage, high current applications. The device has a drain-source voltage of 500V, a gate-source voltage range of 30V, and a turn-on voltage of 3.8V. Its on-resistance is 80mΩ at VGS=10V, and the maximum drain current is 40A. FP22N50A-VB uses advanced SJ_Multi-EPI technology, providing excellent conductivity and low conduction loss, and is widely used in high voltage power switches, inverters and other power control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. FP22N50A-VB MOSFET Detailed parameter description
1. **Package type**: TO-247
- The TO-247 package is designed to handle higher power applications, providing excellent heat dissipation and helping to maintain device stability under high power loads.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration ensures efficient switching characteristics and low conduction losses, suitable for high current and high voltage applications.
3. **Drain-source voltage (VDS)**: 500V
- The maximum drain-source voltage is 500V, making it suitable for switching and power management applications that need to handle higher voltages.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate-source voltage range of ±30V to ensure that the MOSFET can operate stably under various control conditions.
5. **Throw-On Voltage (Vth)**: 3.8V
- The 3.8V turn-on voltage ensures that the MOSFET can be reliably turned on at higher gate voltages, helping to reduce the complexity of the drive circuit.
6. **On-Resistance (RDS(ON))**:
- **80mΩ @ VGS=10V**
- At VGS=10V, the on-resistance is 80mΩ, providing lower conduction losses and improving the efficiency of the overall power system.
7. **Drain Current (ID)**: 40A
- The maximum drain current is 40A, suitable for handling medium and high current loads.
8. **Technology Type**: SJ_Multi-EPI Technology
- SJ_Multi-EPI technology helps reduce on-resistance and increase power density, ensuring the reliability of MOSFET in high voltage and high current applications.
1. **Package type**: TO-247
- The TO-247 package is designed to handle higher power applications, providing excellent heat dissipation and helping to maintain device stability under high power loads.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration ensures efficient switching characteristics and low conduction losses, suitable for high current and high voltage applications.
3. **Drain-source voltage (VDS)**: 500V
- The maximum drain-source voltage is 500V, making it suitable for switching and power management applications that need to handle higher voltages.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate-source voltage range of ±30V to ensure that the MOSFET can operate stably under various control conditions.
5. **Throw-On Voltage (Vth)**: 3.8V
- The 3.8V turn-on voltage ensures that the MOSFET can be reliably turned on at higher gate voltages, helping to reduce the complexity of the drive circuit.
6. **On-Resistance (RDS(ON))**:
- **80mΩ @ VGS=10V**
- At VGS=10V, the on-resistance is 80mΩ, providing lower conduction losses and improving the efficiency of the overall power system.
7. **Drain Current (ID)**: 40A
- The maximum drain current is 40A, suitable for handling medium and high current loads.
8. **Technology Type**: SJ_Multi-EPI Technology
- SJ_Multi-EPI technology helps reduce on-resistance and increase power density, ensuring the reliability of MOSFET in high voltage and high current applications.
Domain and module applications：
III. FP22N50A-VB Applications and Module Examples
1. **Power Switch Module**:
- FP22N50A-VB is suitable for high voltage power switch modules, such as the switching stage in DC-DC converters. Its high voltage and high current handling capabilities, combined with low on-resistance, can effectively improve power conversion efficiency and reduce energy loss.
2. **Inverter System**:
- In solar inverters and power inverters, FP22N50A-VB can be used as a key switching device to convert DC to AC. Its high voltage withstand capability and low on-resistance make it an ideal choice in inverter design.
3. **Motor Drive Circuit**:
- FP22N50A-VB is suitable for high voltage and high current motor drive circuits, such as industrial motor drives and electric vehicle drive systems. Its ability to handle high current and high voltage helps improve the efficiency and reliability of motor control.
4. **High Voltage Power Supply**:
- In high voltage power supplies, the FP22N50A-VB can be used in power management and protection circuits to ensure stable operation at high voltages. Its excellent conductivity and low on-resistance help optimize the overall performance of the power supply.
5. **Power Factor Correction (PFC) Circuit**:
- The FP22N50A-VB is also used in power factor correction circuits to improve the efficiency and power factor of power systems. Its high voltage and high current handling capabilities make it suitable for handling the switching needs in high power PFC circuits.
These application examples demonstrate the wide applicability of the FP22N50A-VB MOSFET in high voltage and high current applications, and its efficient switching characteristics and low conduction losses make it excel in the fields of power management and power conversion.
1. **Power Switch Module**:
- FP22N50A-VB is suitable for high voltage power switch modules, such as the switching stage in DC-DC converters. Its high voltage and high current handling capabilities, combined with low on-resistance, can effectively improve power conversion efficiency and reduce energy loss.
2. **Inverter System**:
- In solar inverters and power inverters, FP22N50A-VB can be used as a key switching device to convert DC to AC. Its high voltage withstand capability and low on-resistance make it an ideal choice in inverter design.
3. **Motor Drive Circuit**:
- FP22N50A-VB is suitable for high voltage and high current motor drive circuits, such as industrial motor drives and electric vehicle drive systems. Its ability to handle high current and high voltage helps improve the efficiency and reliability of motor control.
4. **High Voltage Power Supply**:
- In high voltage power supplies, the FP22N50A-VB can be used in power management and protection circuits to ensure stable operation at high voltages. Its excellent conductivity and low on-resistance help optimize the overall performance of the power supply.
5. **Power Factor Correction (PFC) Circuit**:
- The FP22N50A-VB is also used in power factor correction circuits to improve the efficiency and power factor of power systems. Its high voltage and high current handling capabilities make it suitable for handling the switching needs in high power PFC circuits.
These application examples demonstrate the wide applicability of the FP22N50A-VB MOSFET in high voltage and high current applications, and its efficient switching characteristics and low conduction losses make it excel in the fields of power management and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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