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FP17N50L-VB Product details
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Product Introduction: FP17N50L-VB
FP17N50L-VB is a high voltage N-channel power MOSFET in TO247 package. Designed to handle high voltage applications, this MOSFET has a drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A. It has an on-resistance (RDS(ON)) of 80mΩ at a gate voltage (VGS) of 10V, and uses SJ_Multi-EPI technology to provide high voltage tolerance and excellent switching performance. FP17N50L-VB is ideal for reliable power conversion and current management applications.
FP17N50L-VB is a high voltage N-channel power MOSFET in TO247 package. Designed to handle high voltage applications, this MOSFET has a drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A. It has an on-resistance (RDS(ON)) of 80mΩ at a gate voltage (VGS) of 10V, and uses SJ_Multi-EPI technology to provide high voltage tolerance and excellent switching performance. FP17N50L-VB is ideal for reliable power conversion and current management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Package type (Package): ** TO247
- **Polarity configuration (Configuration): ** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 500V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.8V
- **On-resistance (RDS(ON)): ** 80mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 40A
- **Technology (Technology): ** SJ_Multi-EPI
- **Package type (Package): ** TO247
- **Polarity configuration (Configuration): ** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 500V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.8V
- **On-resistance (RDS(ON)): ** 80mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 40A
- **Technology (Technology): ** SJ_Multi-EPI
Domain and module applications：
Application fields and module examples:
1. **Power supply and inverter:** FP17N50L-VB plays an important role in power supply and inverter modules, especially for high voltage environments. Its high drain-source voltage of 500V makes it suitable for use in high-voltage DC to AC (DC-AC) inverters and AC to DC (AC-DC) power converters. Its low on-resistance helps improve power conversion efficiency and reduce energy loss.
2. **Electric vehicles and high-voltage power management:** In electric vehicles and high-voltage power management systems, this MOSFET can be used as a power switching component to provide reliable voltage control and high current handling capabilities. Its high voltage tolerance ensures its stability and safety in electric vehicle battery management and electric drive systems.
3. **Industrial automation:** FP17N50L-VB is suitable for high-voltage switching applications in industrial automation, such as high-voltage drivers and motor control systems. Its high current capability and high voltage tolerance ensure reliable control of high-power devices in industrial environments.
4. **High Voltage Power Amplifier:** The high voltage and high current characteristics of the FP17N50L-VB make it an ideal choice in high voltage power amplifier designs. These applications typically require MOSFETs that can operate stably at high voltages while maintaining low on-resistance to improve the overall performance and reliability of the system.
1. **Power supply and inverter:** FP17N50L-VB plays an important role in power supply and inverter modules, especially for high voltage environments. Its high drain-source voltage of 500V makes it suitable for use in high-voltage DC to AC (DC-AC) inverters and AC to DC (AC-DC) power converters. Its low on-resistance helps improve power conversion efficiency and reduce energy loss.
2. **Electric vehicles and high-voltage power management:** In electric vehicles and high-voltage power management systems, this MOSFET can be used as a power switching component to provide reliable voltage control and high current handling capabilities. Its high voltage tolerance ensures its stability and safety in electric vehicle battery management and electric drive systems.
3. **Industrial automation:** FP17N50L-VB is suitable for high-voltage switching applications in industrial automation, such as high-voltage drivers and motor control systems. Its high current capability and high voltage tolerance ensure reliable control of high-power devices in industrial environments.
4. **High Voltage Power Amplifier:** The high voltage and high current characteristics of the FP17N50L-VB make it an ideal choice in high voltage power amplifier designs. These applications typically require MOSFETs that can operate stably at high voltages while maintaining low on-resistance to improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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