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FP054N-VB Product details
Back to previous pageProduct introduction：
1. FP054N-VB MOSFET Product Introduction
FP054N-VB is a high-performance N-channel MOSFET in TO-247 package, suitable for low-voltage and high-current applications. The device has a drain-source voltage of 60V, a gate-source voltage range of 20V, and a turn-on voltage of 2.5V. Its on-resistance is 7mΩ at VGS=10V, and it can carry a drain current of up to 150A. FP054N-VB uses advanced Trench technology, providing low conduction loss and efficient current conduction capability, and is widely used in power management and high-power switching circuits.
FP054N-VB is a high-performance N-channel MOSFET in TO-247 package, suitable for low-voltage and high-current applications. The device has a drain-source voltage of 60V, a gate-source voltage range of 20V, and a turn-on voltage of 2.5V. Its on-resistance is 7mΩ at VGS=10V, and it can carry a drain current of up to 150A. FP054N-VB uses advanced Trench technology, providing low conduction loss and efficient current conduction capability, and is widely used in power management and high-power switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. FP054N-VB MOSFET Detailed parameter description
1. **Package type**: TO-247
- TO-247 package has good heat dissipation performance, suitable for high power applications, and can effectively handle high current and high temperature environments.
2. **Channel configuration**: Single N-channel
- Single N-channel configuration provides excellent switching speed and low conduction loss, suitable for applications requiring efficient current conduction.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for switching applications requiring a medium voltage range.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a gate-source voltage range of ±20V to ensure that the MOSFET can work stably under different driving conditions.
5. **Throw-On Voltage (Vth)**: 2.5V
- The 2.5V turn-on voltage ensures reliable turn-on of the MOSFET at a lower gate voltage, helping to reduce the complexity of the control circuit.
6. **On-Resistance (RDS(ON))**:
- **7mΩ @ VGS=10V**
- At VGS=10V, the on-resistance is 7mΩ, providing extremely low conduction losses and improving overall system efficiency.
7. **Drain Current (ID)**: 150A
- The maximum drain current is 150A, suitable for applications handling medium to high current loads.
8. **Technology Type**: Trench Technology
- Trench technology excels in reducing on-resistance and increasing power density, ensuring the reliability of MOSFET in high current and high power applications.
1. **Package type**: TO-247
- TO-247 package has good heat dissipation performance, suitable for high power applications, and can effectively handle high current and high temperature environments.
2. **Channel configuration**: Single N-channel
- Single N-channel configuration provides excellent switching speed and low conduction loss, suitable for applications requiring efficient current conduction.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for switching applications requiring a medium voltage range.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a gate-source voltage range of ±20V to ensure that the MOSFET can work stably under different driving conditions.
5. **Throw-On Voltage (Vth)**: 2.5V
- The 2.5V turn-on voltage ensures reliable turn-on of the MOSFET at a lower gate voltage, helping to reduce the complexity of the control circuit.
6. **On-Resistance (RDS(ON))**:
- **7mΩ @ VGS=10V**
- At VGS=10V, the on-resistance is 7mΩ, providing extremely low conduction losses and improving overall system efficiency.
7. **Drain Current (ID)**: 150A
- The maximum drain current is 150A, suitable for applications handling medium to high current loads.
8. **Technology Type**: Trench Technology
- Trench technology excels in reducing on-resistance and increasing power density, ensuring the reliability of MOSFET in high current and high power applications.
Domain and module applications：
III. FP054N-VB Application Fields and Module Examples
1. **High Power Power Module**:
- FP054N-VB is very suitable for high power power modules such as DC-DC converters and AC-DC power supplies. Its low on-resistance and high current handling capability can effectively improve power conversion efficiency and reduce heat loss.
2. **Electric Vehicle Control System**:
- In the battery management system and electric drive system of electric vehicles, FP054N-VB can be used as an efficient switching device to help manage the flow of large currents, optimize the battery charging and discharging process, and provide efficient current conduction in the control of electric motors.
3. **Uninterruptible Power Supply (UPS)**:
- FP054N-VB is suitable for power factor correction and inverter circuits in UPS systems. Its high current handling capability and low conduction loss can ensure stable power support for equipment during power failures.
4. **Industrial Motor Drive**:
- In the drive circuit of industrial motors, FP054N-VB can be used as the main switch device, providing efficient current conduction and fast switching capabilities to ensure stable operation of the motor at high power.
5. **Solar Inverter**:
- In solar inverters, FP054N-VB can be used in the DC-AC conversion part to help efficiently convert the DC power generated by solar panels into AC power, suitable for use in home and industrial solar power generation systems.
These application examples demonstrate the wide applicability of FP054N-VB MOSFET in medium and high current and low voltage applications, making it an ideal choice in power management, automotive electronics and industrial control.
1. **High Power Power Module**:
- FP054N-VB is very suitable for high power power modules such as DC-DC converters and AC-DC power supplies. Its low on-resistance and high current handling capability can effectively improve power conversion efficiency and reduce heat loss.
2. **Electric Vehicle Control System**:
- In the battery management system and electric drive system of electric vehicles, FP054N-VB can be used as an efficient switching device to help manage the flow of large currents, optimize the battery charging and discharging process, and provide efficient current conduction in the control of electric motors.
3. **Uninterruptible Power Supply (UPS)**:
- FP054N-VB is suitable for power factor correction and inverter circuits in UPS systems. Its high current handling capability and low conduction loss can ensure stable power support for equipment during power failures.
4. **Industrial Motor Drive**:
- In the drive circuit of industrial motors, FP054N-VB can be used as the main switch device, providing efficient current conduction and fast switching capabilities to ensure stable operation of the motor at high power.
5. **Solar Inverter**:
- In solar inverters, FP054N-VB can be used in the DC-AC conversion part to help efficiently convert the DC power generated by solar panels into AC power, suitable for use in home and industrial solar power generation systems.
These application examples demonstrate the wide applicability of FP054N-VB MOSFET in medium and high current and low voltage applications, making it an ideal choice in power management, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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