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FMV23N50ES-VB Product details
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1. FMV23N50ES-VB MOSFET Product Introduction
FMV23N50ES-VB is a high-voltage N-channel MOSFET in TO-220F package, designed for high voltage applications. The MOSFET has a drain-source voltage of 650V, a gate-source voltage range of 30V, and a turn-on voltage of 3.5V. At VGS=10V, its on-resistance is 160mΩ. FMV23N50ES-VB uses SJ_Multi-EPI technology, which provides excellent electrical performance and high voltage withstand capability, suitable for various high-voltage power management and switching applications.
FMV23N50ES-VB is a high-voltage N-channel MOSFET in TO-220F package, designed for high voltage applications. The MOSFET has a drain-source voltage of 650V, a gate-source voltage range of 30V, and a turn-on voltage of 3.5V. At VGS=10V, its on-resistance is 160mΩ. FMV23N50ES-VB uses SJ_Multi-EPI technology, which provides excellent electrical performance and high voltage withstand capability, suitable for various high-voltage power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FMV23N50ES-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- TO-220F package is suitable for medium to high power applications, with good heat dissipation and electrical performance, suitable for use in high voltage and high current environments.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET provides excellent switching performance and low on-resistance, suitable for various high voltage switching and control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can handle high voltage applications and is suitable for high voltage power supplies and switching modules.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate-source voltage range of ±30V, providing flexible control voltage adaptation capabilities to ensure stable operation of the MOSFET under different control conditions.
5. **Throw-on voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which allows the MOSFET to be effectively turned on at a lower gate voltage, suitable for a variety of power control applications.
6. **On-resistance (RDS(ON))**:
- **160mΩ @ VGS=10V**
- When VGS=10V, the on-resistance is 160mΩ, providing lower conduction losses and effectively improving current conduction efficiency.
7. **Drain current (ID)**: 20A
- The maximum drain current is 20A, suitable for applications handling medium to high current loads.
8. **Technology type**: SJ_Multi-EPI technology
- SJ_Multi-EPI technology enhances the voltage resistance of MOSFET, reduces the on-resistance, improves the overall performance and stability, and is suitable for high power and high voltage applications.
1. **Package type**: TO-220F
- TO-220F package is suitable for medium to high power applications, with good heat dissipation and electrical performance, suitable for use in high voltage and high current environments.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET provides excellent switching performance and low on-resistance, suitable for various high voltage switching and control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can handle high voltage applications and is suitable for high voltage power supplies and switching modules.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate-source voltage range of ±30V, providing flexible control voltage adaptation capabilities to ensure stable operation of the MOSFET under different control conditions.
5. **Throw-on voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which allows the MOSFET to be effectively turned on at a lower gate voltage, suitable for a variety of power control applications.
6. **On-resistance (RDS(ON))**:
- **160mΩ @ VGS=10V**
- When VGS=10V, the on-resistance is 160mΩ, providing lower conduction losses and effectively improving current conduction efficiency.
7. **Drain current (ID)**: 20A
- The maximum drain current is 20A, suitable for applications handling medium to high current loads.
8. **Technology type**: SJ_Multi-EPI technology
- SJ_Multi-EPI technology enhances the voltage resistance of MOSFET, reduces the on-resistance, improves the overall performance and stability, and is suitable for high power and high voltage applications.
Domain and module applications：
3. FMV23N50ES-VB application areas and module examples
1. **High-voltage power switch**:
- FMV23N50ES-VB is suitable for high-voltage power switch modules, such as AC-DC power converters and DC-DC converters. Its 650V withstand voltage ensures stable switching in high-voltage environments and is suitable for power systems that require high voltage processing.
2. **Industrial power control**:
- In industrial power control equipment, such as inverters and motor controllers, FMV23N50ES-VB provides high voltage and high current handling capabilities, suitable for high voltage and high current switching and control applications, improving the performance and reliability of industrial equipment.
3. **Power protection system**:
- In power protection systems, such as overvoltage protection circuits and current protection switches, the high withstand voltage and low on-resistance characteristics of FMV23N50ES-VB can effectively protect the power system from overvoltage and overcurrent, ensuring the safe operation of the system.
4. **High-voltage power amplifier**:
- In high-voltage power amplifier applications, FMV23N50ES-VB is able to handle high voltage loads and is suitable for high-power amplification applications such as RF power amplifiers, providing reliable switching and power amplification capabilities.
5. **Electric welding machine**:
- In the power switch and control circuit of the electric welding machine, the high withstand voltage characteristics and low on-resistance of FMV23N50ES-VB ensure stability and reliability during high-power welding.
These application examples demonstrate the excellent performance of the FMV23N50ES-VB in scenarios with high voltage and high current requirements, making it suitable for a variety of high-power, high-voltage application environments.
1. **High-voltage power switch**:
- FMV23N50ES-VB is suitable for high-voltage power switch modules, such as AC-DC power converters and DC-DC converters. Its 650V withstand voltage ensures stable switching in high-voltage environments and is suitable for power systems that require high voltage processing.
2. **Industrial power control**:
- In industrial power control equipment, such as inverters and motor controllers, FMV23N50ES-VB provides high voltage and high current handling capabilities, suitable for high voltage and high current switching and control applications, improving the performance and reliability of industrial equipment.
3. **Power protection system**:
- In power protection systems, such as overvoltage protection circuits and current protection switches, the high withstand voltage and low on-resistance characteristics of FMV23N50ES-VB can effectively protect the power system from overvoltage and overcurrent, ensuring the safe operation of the system.
4. **High-voltage power amplifier**:
- In high-voltage power amplifier applications, FMV23N50ES-VB is able to handle high voltage loads and is suitable for high-power amplification applications such as RF power amplifiers, providing reliable switching and power amplification capabilities.
5. **Electric welding machine**:
- In the power switch and control circuit of the electric welding machine, the high withstand voltage characteristics and low on-resistance of FMV23N50ES-VB ensure stability and reliability during high-power welding.
These application examples demonstrate the excellent performance of the FMV23N50ES-VB in scenarios with high voltage and high current requirements, making it suitable for a variety of high-power, high-voltage application environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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