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FMV19N60ES-VB Product details

Product introduction:

Product Introduction

**FMV19N60ES-VB** is a high-voltage single N-channel power MOSFET in a TO220F package. This MOSFET has a drain-source withstand voltage (VDS) of 650V, which is suitable for high-voltage applications. Its maximum gate-source voltage (VGS) is ±30V, supporting a higher control voltage range. The threshold voltage (Vth) is 3.5V, which ensures stable turn-on at a certain gate voltage. The on-resistance (RDS(ON)) is 320mΩ@VGS=10V, providing good current control performance. The maximum drain current (ID) is 20A, which is suitable for scenarios that require high current handling. This MOSFET uses Plannar technology, has high voltage resistance and stability, and is suitable for use in various high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 320mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Model**: FMV19N60ES-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: Plannar

Domain and module applications:

Applications and modules

1. **High voltage switching power supply**: The 650V withstand voltage of the FMV19N60ES-VB makes it suitable for use in high voltage switching power supplies (SMPS). In this application, it can be used as a switching element to stably handle high voltages, ensuring efficient and stable power supply.

2. **High voltage inverter**: This MOSFET performs well in high voltage inverters and can handle high voltages of 650V. This makes it suitable for photovoltaic power generation systems, wind power generation systems, and other high voltage inverter applications to convert DC power into AC power and provide stable power output.

3. **Power management module**: The high voltage withstand capability of the FMV19N60ES-VB makes it suitable for power management modules, especially in situations where high voltage processing is required. It can effectively control and manage power to ensure system stability and efficiency.

4. **Motor drive system**: In high-voltage motor drive systems, this MOSFET can stably handle high voltage and high current, making it suitable for industrial motor drive, electric vehicle drive and other applications, providing reliable current control and motor drive.

5. **Power protection circuit**: FMV19N60ES-VB is also suitable for power protection circuits, such as overvoltage protection circuits. Its high voltage withstand capability and moderate on-resistance enable it to effectively protect circuits from potential damage caused by overvoltage and short circuits.

In summary, FMV19N60ES-VB is a high-performance MOSFET suitable for high-voltage switching power supplies, high-voltage inverters, power management modules, motor drive systems and power protection circuits. Its excellent voltage resistance and stability make it superior in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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