FMV19N60ES-VB Product details
Product introduction:
**FMV19N60ES-VB** is a high-voltage single N-channel power MOSFET in a TO220F package. This MOSFET has a drain-source withstand voltage (VDS) of 650V, which is suitable for high-voltage applications. Its maximum gate-source voltage (VGS) is ±30V, supporting a higher control voltage range. The threshold voltage (Vth) is 3.5V, which ensures stable turn-on at a certain gate voltage. The on-resistance (RDS(ON)) is 320mΩ@VGS=10V, providing good current control performance. The maximum drain current (ID) is 20A, which is suitable for scenarios that require high current handling. This MOSFET uses Plannar technology, has high voltage resistance and stability, and is suitable for use in various high-voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: FMV19N60ES-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications:
1. **High voltage switching power supply**: The 650V withstand voltage of the FMV19N60ES-VB makes it suitable for use in high voltage switching power supplies (SMPS). In this application, it can be used as a switching element to stably handle high voltages, ensuring efficient and stable power supply.
2. **High voltage inverter**: This MOSFET performs well in high voltage inverters and can handle high voltages of 650V. This makes it suitable for photovoltaic power generation systems, wind power generation systems, and other high voltage inverter applications to convert DC power into AC power and provide stable power output.
3. **Power management module**: The high voltage withstand capability of the FMV19N60ES-VB makes it suitable for power management modules, especially in situations where high voltage processing is required. It can effectively control and manage power to ensure system stability and efficiency.
4. **Motor drive system**: In high-voltage motor drive systems, this MOSFET can stably handle high voltage and high current, making it suitable for industrial motor drive, electric vehicle drive and other applications, providing reliable current control and motor drive.
5. **Power protection circuit**: FMV19N60ES-VB is also suitable for power protection circuits, such as overvoltage protection circuits. Its high voltage withstand capability and moderate on-resistance enable it to effectively protect circuits from potential damage caused by overvoltage and short circuits.
In summary, FMV19N60ES-VB is a high-performance MOSFET suitable for high-voltage switching power supplies, high-voltage inverters, power management modules, motor drive systems and power protection circuits. Its excellent voltage resistance and stability make it superior in these fields.
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