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FMV15N70E-VB Product details
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1. FMV15N70E-VB MOSFET Product Introduction
FMV15N70E-VB is a high-voltage N-channel MOSFET in TO-220F package, designed for high-voltage, high-power applications. The maximum drain-source voltage of this MOSFET is 700V, and it can handle a drain current of up to 10A. Its gate-source voltage range is ±30V, and its turn-on voltage is 3.5V. The on-resistance of FMV15N70E-VB at VGS=10V is 390mΩ. It uses SJ_Multi-EPI technology, which provides high voltage resistance and excellent conduction characteristics, and is suitable for application scenarios that require high voltage and medium current handling.
FMV15N70E-VB is a high-voltage N-channel MOSFET in TO-220F package, designed for high-voltage, high-power applications. The maximum drain-source voltage of this MOSFET is 700V, and it can handle a drain current of up to 10A. Its gate-source voltage range is ±30V, and its turn-on voltage is 3.5V. The on-resistance of FMV15N70E-VB at VGS=10V is 390mΩ. It uses SJ_Multi-EPI technology, which provides high voltage resistance and excellent conduction characteristics, and is suitable for application scenarios that require high voltage and medium current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FMV15N70E-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- TO-220F package has excellent heat dissipation performance, suitable for high power and high voltage applications, and effective heat dissipation improves the stability and reliability of MOSFET.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for high voltage and medium current applications, providing stable switching performance and low on-resistance.
3. **Drain-source voltage (VDS)**: 700V
- The maximum drain-source voltage is 700V, which can handle high voltage environments and is suitable for high voltage power and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of ±30V, which can operate stably under a wide range of control voltages.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to be reliably turned on at a moderate gate voltage.
6. **On-Resistance (RDS(ON))**:
- **390mΩ @ VGS=10V**
- The on-resistance is 390mΩ at VGS=10V, providing low conduction losses and ensuring good current conduction performance.
7. **Drain Current (ID)**: 10A
- The maximum drain current is 10A, suitable for handling medium current loads.
8. **Technology Type**: SJ_Multi-EPI Technology
- SJ_Multi-EPI technology enhances the voltage resistance of the MOSFET, reduces the on-resistance, and improves its overall performance and stability.
1. **Package type**: TO-220F
- TO-220F package has excellent heat dissipation performance, suitable for high power and high voltage applications, and effective heat dissipation improves the stability and reliability of MOSFET.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for high voltage and medium current applications, providing stable switching performance and low on-resistance.
3. **Drain-source voltage (VDS)**: 700V
- The maximum drain-source voltage is 700V, which can handle high voltage environments and is suitable for high voltage power and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of ±30V, which can operate stably under a wide range of control voltages.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to be reliably turned on at a moderate gate voltage.
6. **On-Resistance (RDS(ON))**:
- **390mΩ @ VGS=10V**
- The on-resistance is 390mΩ at VGS=10V, providing low conduction losses and ensuring good current conduction performance.
7. **Drain Current (ID)**: 10A
- The maximum drain current is 10A, suitable for handling medium current loads.
8. **Technology Type**: SJ_Multi-EPI Technology
- SJ_Multi-EPI technology enhances the voltage resistance of the MOSFET, reduces the on-resistance, and improves its overall performance and stability.
Domain and module applications：
3. Application fields and module examples of FMV15N70E-VB
1. **High-voltage power switch**:
- FMV15N70E-VB is suitable for high-voltage power switch modules, such as AC-DC and DC-DC converters. This MOSFET can stably switch in a high-voltage environment, ensuring the high efficiency and reliability of the power system.
2. **Industrial power equipment**:
- In industrial power equipment, such as inverters and motor controllers, FMV15N70E-VB provides high voltage handling capabilities, suitable for power control and switching applications, ensuring the stable operation of industrial equipment.
3. **Electric welding machine**:
- The power switch and control circuit in the electric welding machine can use FMV15N70E-VB. The high withstand voltage characteristics of this MOSFET ensure stability and reliability during high-power welding.
4. **Power protection system**:
- In power protection systems, such as current protection switches and overvoltage protection circuits, FMV15N70E-VB provides reliable switching capabilities to protect the system from power surges and overvoltages, ensuring safe operation of the power system.
5. **High-voltage power amplifier**:
- In high-voltage power amplifier applications such as RF power amplifiers, the high withstand voltage performance and moderate on-resistance of FMV15N70E-VB enable it to effectively handle high-voltage loads and provide reliable power amplification capabilities.
Through these application examples, FMV15N70E-VB demonstrates its excellent performance in high-voltage and medium-current applications, suitable for a variety of scenarios requiring high power and high voltage processing.
1. **High-voltage power switch**:
- FMV15N70E-VB is suitable for high-voltage power switch modules, such as AC-DC and DC-DC converters. This MOSFET can stably switch in a high-voltage environment, ensuring the high efficiency and reliability of the power system.
2. **Industrial power equipment**:
- In industrial power equipment, such as inverters and motor controllers, FMV15N70E-VB provides high voltage handling capabilities, suitable for power control and switching applications, ensuring the stable operation of industrial equipment.
3. **Electric welding machine**:
- The power switch and control circuit in the electric welding machine can use FMV15N70E-VB. The high withstand voltage characteristics of this MOSFET ensure stability and reliability during high-power welding.
4. **Power protection system**:
- In power protection systems, such as current protection switches and overvoltage protection circuits, FMV15N70E-VB provides reliable switching capabilities to protect the system from power surges and overvoltages, ensuring safe operation of the power system.
5. **High-voltage power amplifier**:
- In high-voltage power amplifier applications such as RF power amplifiers, the high withstand voltage performance and moderate on-resistance of FMV15N70E-VB enable it to effectively handle high-voltage loads and provide reliable power amplification capabilities.
Through these application examples, FMV15N70E-VB demonstrates its excellent performance in high-voltage and medium-current applications, suitable for a variety of scenarios requiring high power and high voltage processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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