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FMV13N60E-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FMV13N60E-VB is a high voltage N-channel MOSFET in TO220F package. It has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 12A, and is manufactured using Plannar technology. The on-resistance (RDS(ON)) of this MOSFET is 680mΩ @ VGS=10V, making it suitable for applications that require high voltage handling capabilities. The FMV13N60E-VB is designed for high voltage switching tasks, can operate stably under high voltage conditions, and provides reliable current switching capabilities.
FMV13N60E-VB is a high voltage N-channel MOSFET in TO220F package. It has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 12A, and is manufactured using Plannar technology. The on-resistance (RDS(ON)) of this MOSFET is 680mΩ @ VGS=10V, making it suitable for applications that require high voltage handling capabilities. The FMV13N60E-VB is designed for high voltage switching tasks, can operate stably under high voltage conditions, and provides reliable current switching capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
- **Model**: FMV13N60E-VB
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 55W
- **Model**: FMV13N60E-VB
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 55W
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**: The 650V maximum drain-source voltage of the FMV13N60E-VB makes it particularly suitable for high-voltage switching power supply (SMPS) applications. In these power modules, this MOSFET is able to handle high-voltage switching tasks, ensuring the stability and safety of the power supply.
2. **Power inverter**: In high-voltage inverter applications, such as inverters for solar power generation systems or uninterruptible power supplies (UPS), the FMV13N60E-VB can be used as a key power switching component. Its high voltage withstand capability and moderate on-resistance make it suitable for handling the switching requirements in the high-voltage inverter process.
3. **Welding equipment**: This MOSFET can be applied to high-voltage welding equipment (such as arc welders and spot welders). Since it can withstand a high voltage of 650V and provide stable switching performance, it is suitable for current control and regulation during the welding process.
4. **High voltage power regulation**: In industrial power regulation systems, the FMV13N60E-VB is suitable for power switching applications in high voltage environments. Its high voltage tolerance and stability enable it to efficiently perform switching tasks in power regulation and protection systems.
With its high voltage tolerance and stable switching performance, the FMV13N60E-VB is suitable for applications such as high voltage switching power supplies, power inverters, welding equipment, and high voltage power regulation systems, providing a reliable high voltage handling solution.
1. **High-voltage switching power supply**: The 650V maximum drain-source voltage of the FMV13N60E-VB makes it particularly suitable for high-voltage switching power supply (SMPS) applications. In these power modules, this MOSFET is able to handle high-voltage switching tasks, ensuring the stability and safety of the power supply.
2. **Power inverter**: In high-voltage inverter applications, such as inverters for solar power generation systems or uninterruptible power supplies (UPS), the FMV13N60E-VB can be used as a key power switching component. Its high voltage withstand capability and moderate on-resistance make it suitable for handling the switching requirements in the high-voltage inverter process.
3. **Welding equipment**: This MOSFET can be applied to high-voltage welding equipment (such as arc welders and spot welders). Since it can withstand a high voltage of 650V and provide stable switching performance, it is suitable for current control and regulation during the welding process.
4. **High voltage power regulation**: In industrial power regulation systems, the FMV13N60E-VB is suitable for power switching applications in high voltage environments. Its high voltage tolerance and stability enable it to efficiently perform switching tasks in power regulation and protection systems.
With its high voltage tolerance and stable switching performance, the FMV13N60E-VB is suitable for applications such as high voltage switching power supplies, power inverters, welding equipment, and high voltage power regulation systems, providing a reliable high voltage handling solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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