FMV12N50ES-VB Product details
Product introduction:
**FMV12N50ES-VB** is a high-voltage single N-channel power MOSFET in a TO220F package. This MOSFET has a drain-source withstand voltage (VDS) of 550V, suitable for medium and high voltage applications. Its maximum gate-source voltage (VGS) is ±30V, which can withstand a large gate control voltage. The threshold voltage (Vth) is 3V, ensuring stable turn-on at a certain gate voltage. The on-resistance (RDS(ON)) is 260mΩ@VGS=10V, making it suitable for applications requiring higher current. The maximum drain current (ID) is 18A, which can provide reliable current handling capability. This MOSFET uses Plannar technology, has high voltage withstand capability and stability, and is very suitable for use in medium and high voltage circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: FMV12N50ES-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications:
1. **High voltage switching power supply**: The 550V withstand voltage of FMV12N50ES-VB makes it very suitable for high voltage switching power supply (SMPS). It can work stably in high voltage environment as a switching element, provide reliable current control, and perform well in high voltage power supply system.
2. **High voltage inverter**: This MOSFET can handle voltage up to 550V, making it suitable for high voltage inverter applications. In photovoltaic power generation system or wind power generation system, it can be used as a switching element in the inverter to convert DC power into high voltage AC power, ensuring the stability and reliability of the system.
3. **Power management module**: Due to its high withstand voltage capability, FMV12N50ES-VB is suitable for power management module, especially in occasions where high voltage needs to be handled. It can work stably under high voltage conditions to ensure the efficient operation of power management system.
4. **Motor drive**: In high-voltage motor control systems, this MOSFET provides high voltage handling capability and reliable current control, making it suitable for high-voltage motor drive applications such as industrial motor drives and electric vehicle drive systems.
5. **Power protection circuit**: FMV12N50ES-VB can also be used in power protection circuits such as overvoltage protection circuits. Its high voltage withstand capability and low on-resistance enable it to effectively protect circuits under high voltage conditions and prevent damage caused by overvoltage or short circuits.
In general, FMV12N50ES-VB is a high-performance MOSFET suitable for high-voltage switching power supplies, high-voltage inverters, power management modules, motor drives, and power protection circuits. Its excellent voltage withstand capability and stability make it reliable in these applications.
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