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FMV11N90E-VB Product details
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Product Introduction
FMV11N90E-VB is a high voltage single N-channel MOSFET packaged in TO220F. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 900V and is suitable for power supplies and power management systems that require high voltage handling capabilities. Its gate-source voltage (VGS) range is ±30V and its gate threshold voltage (Vth) is 3.5V. FMV11N90E-VB uses SJ_Multi-EPI technology, provides an on-resistance (RDS(ON)) of 770mΩ @VGS=10V, and can handle a maximum drain current (ID) of 7A. This MOSFET has excellent performance in high voltage environments and is suitable for a variety of application scenarios requiring high voltage and stability.
FMV11N90E-VB is a high voltage single N-channel MOSFET packaged in TO220F. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 900V and is suitable for power supplies and power management systems that require high voltage handling capabilities. Its gate-source voltage (VGS) range is ±30V and its gate threshold voltage (Vth) is 3.5V. FMV11N90E-VB uses SJ_Multi-EPI technology, provides an on-resistance (RDS(ON)) of 770mΩ @VGS=10V, and can handle a maximum drain current (ID) of 7A. This MOSFET has excellent performance in high voltage environments and is suitable for a variety of application scenarios requiring high voltage and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO220F
The TO220F package has good heat dissipation and electrical connections, and is suitable for medium and high power applications, especially in situations where high voltage and high power handling are required.
2. **Configuration**: Single-N-Channel
Single-N-Channel MOSFET is suitable for current control and switching applications in high voltage environments, and can handle current efficiently and provide reliable switching performance.
3. **Drain-Source Voltage (VDS)**: 900V
The 900V drain-source voltage allows this MOSFET to handle high voltage applications and is suitable for systems and modules that require high voltage tolerance.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures that the MOSFET can operate stably under a wide range of control voltages, enhancing application flexibility and reliability.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
At a gate voltage of 10V, the 770mΩ on-resistance provides moderate conduction losses, suitable for handling current requirements in high voltage applications.
7. **Maximum Drain Current (ID)**: 7A
The maximum drain current of 7A enables the MOSFET to handle medium current loads, suitable for a variety of high voltage applications.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent electrical performance and thermal stability, suitable for applications in high voltage environments, ensuring the reliability and durability of the MOSFET.
1. **Package Type**: TO220F
The TO220F package has good heat dissipation and electrical connections, and is suitable for medium and high power applications, especially in situations where high voltage and high power handling are required.
2. **Configuration**: Single-N-Channel
Single-N-Channel MOSFET is suitable for current control and switching applications in high voltage environments, and can handle current efficiently and provide reliable switching performance.
3. **Drain-Source Voltage (VDS)**: 900V
The 900V drain-source voltage allows this MOSFET to handle high voltage applications and is suitable for systems and modules that require high voltage tolerance.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures that the MOSFET can operate stably under a wide range of control voltages, enhancing application flexibility and reliability.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
At a gate voltage of 10V, the 770mΩ on-resistance provides moderate conduction losses, suitable for handling current requirements in high voltage applications.
7. **Maximum Drain Current (ID)**: 7A
The maximum drain current of 7A enables the MOSFET to handle medium current loads, suitable for a variety of high voltage applications.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent electrical performance and thermal stability, suitable for applications in high voltage environments, ensuring the reliability and durability of the MOSFET.
Domain and module applications：
Applicable fields and modules
1. **High voltage power management**
FMV11N90E-VB performs well in high voltage power management systems, such as in high voltage DC-DC converters and power conditioning modules. The 900V drain-source voltage and 7A drain current of this MOSFET enable it to stably handle high voltage power supplies and provide reliable power output.
2. **Switch mode power supply (SMPS)**
In switch mode power supply applications, this MOSFET can handle high voltage and medium current efficiently. Suitable for switching and controlling high-efficiency power modules, its excellent electrical performance makes it an ideal choice for high voltage power supply designs.
3. **Industrial power conversion**
In industrial power conversion equipment, such as inverters and motor drive systems, FMV11N90E-VB is able to handle high voltage and medium current loads and provide stable power control. Its high voltage capability and good conduction characteristics make it suitable for high voltage motor drive applications.
4. **Electrical protection equipment**
This MOSFET is suitable for electrical protection equipment such as high voltage suppression and overvoltage protection circuits. The high voltage capability of 900V and the medium current handling capability enable it to effectively protect the circuit from high voltage shocks.
5. **Household appliances**
In high-voltage household appliances, such as high-voltage power switches and control modules, the FMV11N90E-VB is able to handle high-voltage power supplies, ensuring the safe and stable operation of the equipment. Its high voltage handling capability and reliable performance make it suitable for a variety of high-voltage electrical appliances.
6. **Automotive electronics**
The application of this MOSFET in automotive electronic systems includes high-voltage power management and switch modules. For example, in the charging system and high-voltage battery management system of electric vehicles, its high voltage handling capability and stable performance enable reliable power control.
With its high voltage and medium current handling capabilities, the FMV11N90E-VB provides efficient and reliable solutions in many fields such as high voltage power management, switch mode power supplies, industrial power conversion, electrical protection equipment, home appliances and automotive electronics.
1. **High voltage power management**
FMV11N90E-VB performs well in high voltage power management systems, such as in high voltage DC-DC converters and power conditioning modules. The 900V drain-source voltage and 7A drain current of this MOSFET enable it to stably handle high voltage power supplies and provide reliable power output.
2. **Switch mode power supply (SMPS)**
In switch mode power supply applications, this MOSFET can handle high voltage and medium current efficiently. Suitable for switching and controlling high-efficiency power modules, its excellent electrical performance makes it an ideal choice for high voltage power supply designs.
3. **Industrial power conversion**
In industrial power conversion equipment, such as inverters and motor drive systems, FMV11N90E-VB is able to handle high voltage and medium current loads and provide stable power control. Its high voltage capability and good conduction characteristics make it suitable for high voltage motor drive applications.
4. **Electrical protection equipment**
This MOSFET is suitable for electrical protection equipment such as high voltage suppression and overvoltage protection circuits. The high voltage capability of 900V and the medium current handling capability enable it to effectively protect the circuit from high voltage shocks.
5. **Household appliances**
In high-voltage household appliances, such as high-voltage power switches and control modules, the FMV11N90E-VB is able to handle high-voltage power supplies, ensuring the safe and stable operation of the equipment. Its high voltage handling capability and reliable performance make it suitable for a variety of high-voltage electrical appliances.
6. **Automotive electronics**
The application of this MOSFET in automotive electronic systems includes high-voltage power management and switch modules. For example, in the charging system and high-voltage battery management system of electric vehicles, its high voltage handling capability and stable performance enable reliable power control.
With its high voltage and medium current handling capabilities, the FMV11N90E-VB provides efficient and reliable solutions in many fields such as high voltage power management, switch mode power supplies, industrial power conversion, electrical protection equipment, home appliances and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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