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FMV10N60E-VB Product details
Back to previous pageProduct introduction：
1. FMV10N60E-VB MOSFET Product Introduction
FMV10N60E-VB is a high-voltage N-channel MOSFET in a TO-220F package, designed for high-voltage applications. Its maximum drain-source voltage is 650V, and it can handle a drain current of up to 10A. The gate-source voltage range of this MOSFET is ±30V, and the turn-on voltage is 3.5V. The on-resistance of FMV10N60E-VB is 830mΩ at VGS=10V. Using Plannar technology, it provides excellent voltage tolerance and reliable conduction characteristics. It is suitable for applications that require high voltage and medium current handling.
FMV10N60E-VB is a high-voltage N-channel MOSFET in a TO-220F package, designed for high-voltage applications. Its maximum drain-source voltage is 650V, and it can handle a drain current of up to 10A. The gate-source voltage range of this MOSFET is ±30V, and the turn-on voltage is 3.5V. The on-resistance of FMV10N60E-VB is 830mΩ at VGS=10V. Using Plannar technology, it provides excellent voltage tolerance and reliable conduction characteristics. It is suitable for applications that require high voltage and medium current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FMV10N60E-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- The TO-220F package provides excellent heat dissipation, suitable for high power and high voltage applications, helping the MOSFET to remain stable under various operating conditions.
2. **Channel configuration**: Single N-channel
- The single N-channel MOSFET configuration is suitable for medium current and high voltage application scenarios, and can operate stably under high voltage.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can handle high voltage environments and is suitable for high voltage power supply and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of ±30V, which can operate stably under a wide range of control voltages.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to be reliably turned on at moderate gate voltage.
6. **On-Resistance (RDS(ON))**:
- **830mΩ @ VGS=10V**
- The on-resistance is 830mΩ at VGS=10V, ensuring good conduction performance.
7. **Drain Current (ID)**: 10A
- The maximum drain current is 10A, suitable for handling medium current loads.
8. **Technology Type**: Plannar Technology
- Plannar Technology improves the voltage resistance and stability of MOSFET, suitable for high voltage applications.
1. **Package type**: TO-220F
- The TO-220F package provides excellent heat dissipation, suitable for high power and high voltage applications, helping the MOSFET to remain stable under various operating conditions.
2. **Channel configuration**: Single N-channel
- The single N-channel MOSFET configuration is suitable for medium current and high voltage application scenarios, and can operate stably under high voltage.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can handle high voltage environments and is suitable for high voltage power supply and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of ±30V, which can operate stably under a wide range of control voltages.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to be reliably turned on at moderate gate voltage.
6. **On-Resistance (RDS(ON))**:
- **830mΩ @ VGS=10V**
- The on-resistance is 830mΩ at VGS=10V, ensuring good conduction performance.
7. **Drain Current (ID)**: 10A
- The maximum drain current is 10A, suitable for handling medium current loads.
8. **Technology Type**: Plannar Technology
- Plannar Technology improves the voltage resistance and stability of MOSFET, suitable for high voltage applications.
Domain and module applications：
3. FMV10N60E-VB Application Fields and Module Examples
1. **High-voltage power switch**:
- FMV10N60E-VB is suitable for high-voltage power switch modules, such as AC-DC converters and DC-DC converters. This MOSFET can stably switch at high voltages to ensure efficient operation of the power system.
2. **Industrial power equipment**:
- In industrial power equipment, such as inverters, motor controllers, etc., FMV10N60E-VB provides high voltage handling capabilities and is suitable for power control and switching applications.
3. **Electric welding machine**:
- The power switch and control circuit in the electric welding machine can use FMV10N60E-VB. The high voltage withstand characteristics of this MOSFET ensure stability and reliability during the welding process.
4. **High Voltage Power Amplifier**:
- In high voltage power amplifiers such as RF power amplifiers, the high withstand voltage performance and moderate on-resistance of the FMV10N60E-VB enable it to effectively handle high voltage loads.
5. **Power Protection System**:
- In power protection systems such as current protection switches and overvoltage protection circuits, the FMV10N60E-VB provides reliable switching capabilities to protect the system from power surges and overvoltages.
Through these application examples, the FMV10N60E-VB demonstrates its excellent performance in high voltage and medium current applications, suitable for a variety of scenarios requiring high power and high voltage handling.
1. **High-voltage power switch**:
- FMV10N60E-VB is suitable for high-voltage power switch modules, such as AC-DC converters and DC-DC converters. This MOSFET can stably switch at high voltages to ensure efficient operation of the power system.
2. **Industrial power equipment**:
- In industrial power equipment, such as inverters, motor controllers, etc., FMV10N60E-VB provides high voltage handling capabilities and is suitable for power control and switching applications.
3. **Electric welding machine**:
- The power switch and control circuit in the electric welding machine can use FMV10N60E-VB. The high voltage withstand characteristics of this MOSFET ensure stability and reliability during the welding process.
4. **High Voltage Power Amplifier**:
- In high voltage power amplifiers such as RF power amplifiers, the high withstand voltage performance and moderate on-resistance of the FMV10N60E-VB enable it to effectively handle high voltage loads.
5. **Power Protection System**:
- In power protection systems such as current protection switches and overvoltage protection circuits, the FMV10N60E-VB provides reliable switching capabilities to protect the system from power surges and overvoltages.
Through these application examples, the FMV10N60E-VB demonstrates its excellent performance in high voltage and medium current applications, suitable for a variety of scenarios requiring high power and high voltage handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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