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FMV06N60ES-VB Product details
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1. FMV06N60ES-VB MOSFET Product Introduction
FMV06N60ES-VB is a high-voltage N-channel MOSFET in a TO-220F package, designed for high-voltage applications. Its maximum drain-source voltage is 650V, making it suitable for high-voltage power supplies and switching applications. The MOSFET has a gate-source voltage range of ±30V, a turn-on voltage of 3.5V, an on-resistance of 1100mΩ at VGS=10V, and can handle a drain current of up to 7A. The FMV06N60ES-VB uses Plannar technology, which provides excellent voltage tolerance and reliable conduction characteristics, enabling it to perform well in high-voltage and medium-current applications.
FMV06N60ES-VB is a high-voltage N-channel MOSFET in a TO-220F package, designed for high-voltage applications. Its maximum drain-source voltage is 650V, making it suitable for high-voltage power supplies and switching applications. The MOSFET has a gate-source voltage range of ±30V, a turn-on voltage of 3.5V, an on-resistance of 1100mΩ at VGS=10V, and can handle a drain current of up to 7A. The FMV06N60ES-VB uses Plannar technology, which provides excellent voltage tolerance and reliable conduction characteristics, enabling it to perform well in high-voltage and medium-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FMV06N60ES-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- The TO-220F package provides excellent heat dissipation performance and is suitable for high voltage applications that require large power heat dissipation.
2. **Channel configuration**: Single N-channel
- The single N-channel MOSFET configuration is suitable for medium current and high voltage application scenarios and can operate stably under high voltage.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can withstand high voltage environments and is suitable for high voltage switching and power management applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of ±30V to ensure stable operation under various control voltages.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to be reliably turned on at medium gate voltages.
6. **On-Resistance (RDS(ON))**:
- **1100mΩ @ VGS=10V**
- The relatively high on-resistance affects power consumption to a certain extent, but it is still suitable for many high-voltage applications.
7. **Drain Current (ID)**: 7A
- The maximum drain current is 7A, which is suitable for handling medium current loads.
8. **Technology Type**: Plannar Technology
- Plannar technology improves the voltage resistance and stability of MOSFET, making it suitable for high-voltage applications.
1. **Package type**: TO-220F
- The TO-220F package provides excellent heat dissipation performance and is suitable for high voltage applications that require large power heat dissipation.
2. **Channel configuration**: Single N-channel
- The single N-channel MOSFET configuration is suitable for medium current and high voltage application scenarios and can operate stably under high voltage.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can withstand high voltage environments and is suitable for high voltage switching and power management applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of ±30V to ensure stable operation under various control voltages.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to be reliably turned on at medium gate voltages.
6. **On-Resistance (RDS(ON))**:
- **1100mΩ @ VGS=10V**
- The relatively high on-resistance affects power consumption to a certain extent, but it is still suitable for many high-voltage applications.
7. **Drain Current (ID)**: 7A
- The maximum drain current is 7A, which is suitable for handling medium current loads.
8. **Technology Type**: Plannar Technology
- Plannar technology improves the voltage resistance and stability of MOSFET, making it suitable for high-voltage applications.
Domain and module applications：
3. FMV06N60ES-VB Application Fields and Module Examples
1. **High Voltage Power Switch**:
- FMV06N60ES-VB is suitable for high voltage power switch modules, such as in AC-DC and DC-DC converters. Its high voltage withstand capability and reliable switching performance make it excel in high voltage power management.
2. **Industrial Power Equipment**:
- In industrial power equipment, such as inverters and motor controllers, FMV06N60ES-VB provides high voltage handling capabilities, enabling efficient control and management of power systems.
3. **Electric Welding Machine**:
- This MOSFET can be used in the power control and switching circuits of electric welding machines. Its high voltage withstand performance and moderate current handling capability ensure stability and efficiency during the welding process.
4. **Power Protection and Control Systems**:
- In power protection and control systems, the FMV06N60ES-VB can effectively switch high voltage loads, provide reliable power management and protection functions, and ensure safe operation of the system.
5. **High Voltage Power Amplifier**:
- The FMV06N60ES-VB is suitable for the design of high voltage power amplifiers, such as RF power amplifiers. Its high voltage handling capability and reliable switching performance ensure efficient operation of the power amplifier.
Through these application examples, the FMV06N60ES-VB demonstrates its excellent performance in high voltage and medium current applications, suitable for a variety of high power and high voltage environments.
1. **High Voltage Power Switch**:
- FMV06N60ES-VB is suitable for high voltage power switch modules, such as in AC-DC and DC-DC converters. Its high voltage withstand capability and reliable switching performance make it excel in high voltage power management.
2. **Industrial Power Equipment**:
- In industrial power equipment, such as inverters and motor controllers, FMV06N60ES-VB provides high voltage handling capabilities, enabling efficient control and management of power systems.
3. **Electric Welding Machine**:
- This MOSFET can be used in the power control and switching circuits of electric welding machines. Its high voltage withstand performance and moderate current handling capability ensure stability and efficiency during the welding process.
4. **Power Protection and Control Systems**:
- In power protection and control systems, the FMV06N60ES-VB can effectively switch high voltage loads, provide reliable power management and protection functions, and ensure safe operation of the system.
5. **High Voltage Power Amplifier**:
- The FMV06N60ES-VB is suitable for the design of high voltage power amplifiers, such as RF power amplifiers. Its high voltage handling capability and reliable switching performance ensure efficient operation of the power amplifier.
Through these application examples, the FMV06N60ES-VB demonstrates its excellent performance in high voltage and medium current applications, suitable for a variety of high power and high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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