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FMV05N50E-VB Product details

Product introduction:

FMV05N50E-VB MOSFET Product Introduction

The FMV05N50E-VB is a high-voltage N-channel power MOSFET in a TO220F package, designed for applications that require high voltage handling. The MOSFET has a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 4A. Its gate threshold voltage is 3.5V (Vth), which allows it to operate stably at lower gate voltages. The FMV05N50E-VB uses Plannar technology and provides an on-resistance of 2560mΩ (RDS(ON) @ VGS = 10V), making it suitable for applications that require medium current in high-voltage applications. Although its on-resistance is relatively high, its high voltage capability makes it still very useful in specific areas.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 4A 2560mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
FMV05N50E-VB MOSFET Detailed parameter description

- **Model**: FMV05N50E-VB
- **Package**: TO220F
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Thermal resistance (RθJC)**: 2.0°C/W (typical value)
- **Maximum power dissipation (Ptot)**: 60W (please refer to the data sheet for specific values)
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

FMV05N50E-VB Application Fields and Module Examples

1. **High Voltage Switching Circuits**: The FMV05N50E-VB is suitable for use in high voltage switching circuits such as switches and control modules for high voltage power supplies. Despite its high on-resistance, its 650V withstand voltage capability enables it to handle high voltage loads while providing stable performance in switching operations.

2. **Power Management System**: In power management applications, the FMV05N50E-VB can be used as a switching element for high voltage power supplies. For example, power regulators and high voltage distribution systems can take advantage of the high withstand voltage characteristics of this MOSFET to achieve efficient management of power.

3. **High Voltage Inverter**: This MOSFET is suitable for high voltage inverter systems for converting DC power to AC power. Its 650V withstand voltage enables it to handle high voltage loads in inverters while providing efficient switching performance despite its high on-resistance.

4. **Motor Control Systems**: In motor control systems that require high voltage, the FMV05N50E-VB can be used as a switching element to control the start, stop, and run of the motor. Its high voltage capability is suitable for high voltage motor control applications.

The high voltage handling capability of the FMV05N50E-VB makes it perform well in high voltage switching, power management, and inverter systems, and despite its higher on-resistance, it can still provide reliable performance in appropriate applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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