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FMP20N50ES-VB Product details

Product introduction:

1. FMP20N50ES-VB MOSFET Product Introduction

FMP20N50ES-VB is a high-voltage N-channel MOSFET in TO-220 package, designed for high voltage and medium current applications. It has a drain-source withstand voltage of 650V and a gate-source voltage range of ±30V. The turn-on voltage of this MOSFET is 3.5V, the on-resistance is 220mΩ at VGS=10V, and it supports a drain current of up to 15A. It uses SJ_Multi-EPI technology, which optimizes the voltage withstand performance and conduction characteristics of the MOSFET, making it suitable for application environments requiring high voltage and reliability. FMP20N50ES-VB is ideal for high voltage power management and switch control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 15A 220mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 15A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 15A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. FMP20N50ES-VB MOSFET Detailed parameter description

1. **Package type**: TO-220
- The TO-220 package is suitable for high-power applications that require good heat dissipation performance and is easy to surface mount.

2. **Channel configuration**: Single N-channel
- The single N-channel MOSFET configuration is suitable for medium current and high voltage application scenarios and can provide excellent switching performance.

3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high voltage environments and providing stable voltage tolerance.

4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage range of up to ±30V, ensuring stable operation under various control voltages.

5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which is suitable for medium gate voltage control and can reliably turn on the MOSFET.

6. **On-Resistance (RDS(ON))**:
- **220mΩ @ VGS=10V**
- The lower on-resistance reduces power consumption and improves the efficiency of the device at high voltage.

7. **Drain Current (ID)**: 15A
- The maximum drain current is 15A, which can handle higher current loads and is suitable for medium current applications.

8. **Technology Type**: SJ_Multi-EPI Technology
- SJ_Multi-EPI technology enhances the voltage resistance and conduction characteristics of the MOSFET, improving overall performance and reliability.

Domain and module applications:

3. FMP20N50ES-VB Application Fields and Module Examples

1. **High Voltage Power Switch**:
- FMP20N50ES-VB is suitable for use in high voltage power switches, such as AC-DC and DC-DC converters. Its high voltage withstand capability and stable switching performance ensure the efficiency and reliability of the power conversion process.

2. **Industrial Power Equipment**:
- In industrial power equipment, such as inverters and motor control systems, FMP20N50ES-VB provides high voltage and medium current switching capabilities. Its low on-resistance and high voltage handling capabilities make it suitable for high power industrial power supplies.

3. **Electric Welding Machine**:
- This MOSFET can be used in the power control and switching circuits of electric welding machines. Its high voltage withstand capability and reliable conductive performance ensure the stability and efficiency of the electric welding process.

4. **Power Protection and Control Systems**:
- In power protection and control systems, the FMP20N50ES-VB is able to effectively switch and manage high voltage loads. Its excellent voltage tolerance and medium current handling capability make it suitable for use in protection and control modules of power equipment.

5. **High Voltage Power Amplifier**:
- The FMP20N50ES-VB is also suitable for use in high voltage power amplifiers, such as RF power amplifiers. Its high voltage handling capability and stable switching performance ensure efficient operation of high voltage amplifiers.

Through these application examples, the FMP20N50ES-VB demonstrates its excellent performance in high voltage and medium current applications, and is suitable for a wide range of high power and high voltage fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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