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FMP11N70E-VB Product details

Product introduction:

Product Introduction
The FMP11N70E-VB is a high-voltage single N-channel MOSFET in a TO220 package. Designed for high-voltage applications, this MOSFET has a drain-source voltage (VDS) of 700V, enabling it to operate stably in a high-voltage environment. Its gate-source voltage (VGS) range is ±30V, and its gate threshold voltage (Vth) is 3.5V. The FMP11N70E-VB uses Plannar technology, has an on-resistance (RDS(ON)) of 870mΩ @VGS=10V, and can handle a maximum drain current (ID) of 12A. These features enable the FMP11N70E-VB to excel in high-voltage, high-current switching and power control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 700V 3.5V 12A 870mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 700V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 700V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Parameter Description
1. **Package Type**: TO220
The TO220 package provides good heat dissipation and electrical connections for the FMP11N70E-VB, suitable for handling high power applications.

2. **Configuration**: Single-N-Channel
The single-N-Channel MOSFET configuration enables it to efficiently control current, suitable for high voltage and high current switching applications.

3. **Drain-Source Voltage (VDS)**: 700V
The 700V drain-source voltage allows the FMP11N70E-VB to operate reliably in a high voltage environment, suitable for high voltage switching and power management systems.

4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures that the MOSFET can operate stably under a variety of control voltages, improving the flexibility and reliability of the system.

5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, thereby improving switching efficiency.

6. **On-resistance (RDS(ON))**: 870mΩ @ VGS=10V
At a gate voltage of 10V, the 870mΩ on-resistance provides lower conduction losses, which can improve the energy efficiency and power transmission efficiency of the system.

7. **Maximum Drain Current (ID)**: 12A
The maximum drain current is 12A, which is suitable for handling medium and high current loads, meeting the needs of various switching and power control applications.

8. **Technology Type**: Plannar
Plannar technology provides high voltage withstand capability and low on-resistance, making the FMP11N70E-VB excel in high voltage and high current applications.

Domain and module applications:

Applicable fields and modules
The FMP11N70E-VB MOSFET is suitable for the following fields and modules:

1. **High voltage power management**
In high voltage power management systems, the FMP11N70E-VB can efficiently handle high voltage loads and is suitable for high voltage DC-DC converters and power regulation modules. Its 700V voltage level and 12A current handling capability can meet the needs of high voltage power management.

2. **Switch Mode Power Supply (SMPS)**
In switch mode power supply applications, the FMP11N70E-VB can handle high voltage and high current and is suitable for switching and controlling high power power modules. Its low on-resistance and high current handling capability make it an ideal choice for high efficiency power management.

3. **High voltage switching circuits**
This MOSFET is suitable for high voltage switching circuits such as power switches and load switches. Its 700V drain-source voltage and ±30V gate-source voltage range ensure stable operation in various high-voltage switching applications.

4. **Power amplifier**
In power amplifiers, the FMP11N70E-VB is able to handle high voltage and high current as a switching element, suitable for high-power applications such as broadcast transmitters and audio power amplifiers, and its high voltage withstand capability can meet the needs of these high-power applications.

5. **Industrial motor drive**
In industrial motor drive systems, this MOSFET is able to handle high-voltage motor loads, suitable for power tools, electric vehicle drive systems, and industrial motor drive modules. Its high voltage withstand capability and high current handling capability ensure system stability and reliability.

6. **Automotive electronics**
The FMP11N70E-VB is suitable for high-voltage switching applications in automotive electronic systems, such as power management, electric vehicle drive systems, and automotive power switch modules. Its high voltage handling capability and high current handling capability can meet the needs of automotive electronic systems and provide a reliable switching solution.

With its high voltage handling capability, low on-resistance and high current handling capability, the FMP11N70E-VB can provide efficient and reliable solutions in the fields of high voltage power management, switch mode power supplies, high voltage switching circuits, power amplifiers, industrial motor drives and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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