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FMH20N50E-VB Product details
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Product Introduction
**FMH20N50E-VB** is a single N-channel power MOSFET with a TO247 package type, designed for high voltage and high current applications. Its drain-source withstand voltage (VDS) is 500V, making it suitable for stable operation in medium and high voltage environments. The maximum gate-source voltage (VGS) of the MOSFET is ±30V, providing a wide control voltage range. The threshold voltage (Vth) is 3.8V, ensuring that the MOSFET can be reliably turned on at the appropriate gate voltage. The on-resistance (RDS(ON)) of FMH20N50E-VB is 80mΩ (VGS=10V), which has low power consumption in the on state. Its maximum continuous drain current (ID) is 40A, capable of handling high current loads. Using SJ_Multi-EPI technology, this MOSFET provides excellent electrical performance and high current handling capability, suitable for a variety of high voltage applications.
**FMH20N50E-VB** is a single N-channel power MOSFET with a TO247 package type, designed for high voltage and high current applications. Its drain-source withstand voltage (VDS) is 500V, making it suitable for stable operation in medium and high voltage environments. The maximum gate-source voltage (VGS) of the MOSFET is ±30V, providing a wide control voltage range. The threshold voltage (Vth) is 3.8V, ensuring that the MOSFET can be reliably turned on at the appropriate gate voltage. The on-resistance (RDS(ON)) of FMH20N50E-VB is 80mΩ (VGS=10V), which has low power consumption in the on state. Its maximum continuous drain current (ID) is 40A, capable of handling high current loads. Using SJ_Multi-EPI technology, this MOSFET provides excellent electrical performance and high current handling capability, suitable for a variety of high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: FMH20N50E-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: FMH20N50E-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**: The 500V withstand voltage and 80mΩ on-resistance of the FMH20N50E-VB make it ideal for use in the high-voltage section of a switching power supply (SMPS). The MOSFET is able to operate stably in an energy-efficient switching mode, which helps improve converter efficiency and reduce power consumption, especially under high current load conditions.
2. **Inverter**: In inverter applications, the FMH20N50E-VB provides high voltage handling capabilities and good conductivity. Its 40A current handling capability and low on-resistance make it suitable for high-power inverters, such as those used in solar power systems and uninterruptible power supplies (UPS), improving the overall efficiency and reliability of the inverter.
3. **Battery Management System (BMS)**: This MOSFET is also suitable for use in battery management systems, especially in applications that require high voltage and high current control. FMH20N50E-VB is able to provide reliable current control and protection to ensure stable operation of battery systems and is widely used in electric vehicles and large energy storage systems.
4. **Industrial Motor Drive**: FMH20N50E-VB is suitable for industrial motor drive applications. Its high current capability and low on-resistance enable it to stably control motor loads in high voltage environments, making it suitable for motor control systems such as industrial automation and elevator drive systems.
5. **Power Regulators and Power Amplifiers**: Due to its high current handling capability and low on-resistance, FMH20N50E-VB is also suitable for use in power regulators and power amplifiers. These applications require stable performance under high voltage and high current conditions to meet high power requirements.
In general, FMH20N50E-VB is a high-performance power MOSFET suitable for high voltage and high current fields such as switching power supplies, inverters, battery management systems, industrial motor drives, and power regulators. Its excellent electrical performance and reliability make it an ideal choice for these fields.
1. **Switching Power Supply (SMPS)**: The 500V withstand voltage and 80mΩ on-resistance of the FMH20N50E-VB make it ideal for use in the high-voltage section of a switching power supply (SMPS). The MOSFET is able to operate stably in an energy-efficient switching mode, which helps improve converter efficiency and reduce power consumption, especially under high current load conditions.
2. **Inverter**: In inverter applications, the FMH20N50E-VB provides high voltage handling capabilities and good conductivity. Its 40A current handling capability and low on-resistance make it suitable for high-power inverters, such as those used in solar power systems and uninterruptible power supplies (UPS), improving the overall efficiency and reliability of the inverter.
3. **Battery Management System (BMS)**: This MOSFET is also suitable for use in battery management systems, especially in applications that require high voltage and high current control. FMH20N50E-VB is able to provide reliable current control and protection to ensure stable operation of battery systems and is widely used in electric vehicles and large energy storage systems.
4. **Industrial Motor Drive**: FMH20N50E-VB is suitable for industrial motor drive applications. Its high current capability and low on-resistance enable it to stably control motor loads in high voltage environments, making it suitable for motor control systems such as industrial automation and elevator drive systems.
5. **Power Regulators and Power Amplifiers**: Due to its high current handling capability and low on-resistance, FMH20N50E-VB is also suitable for use in power regulators and power amplifiers. These applications require stable performance under high voltage and high current conditions to meet high power requirements.
In general, FMH20N50E-VB is a high-performance power MOSFET suitable for high voltage and high current fields such as switching power supplies, inverters, battery management systems, industrial motor drives, and power regulators. Its excellent electrical performance and reliability make it an ideal choice for these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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