中文
English
FMH20N50ES-VB Product details
Back to previous pageProduct introduction：
Product Introduction
FMH20N50ES-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 500V, this MOSFET is suitable for handling high voltage loads. Its gate-source voltage (VGS) range is ±30V and the gate threshold voltage (Vth) is 3.8V, which enables the MOSFET to operate stably at a lower gate voltage. Using SJ_Multi-EPI technology, the FMH20N50ES-VB provides an on-resistance (RDS(ON)) of 80mΩ @VGS=10V and can withstand a maximum drain current (ID) of 40A. These features enable it to excel in high voltage and high current applications and is widely used in the field of power electronics.
FMH20N50ES-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 500V, this MOSFET is suitable for handling high voltage loads. Its gate-source voltage (VGS) range is ±30V and the gate threshold voltage (Vth) is 3.8V, which enables the MOSFET to operate stably at a lower gate voltage. Using SJ_Multi-EPI technology, the FMH20N50ES-VB provides an on-resistance (RDS(ON)) of 80mΩ @VGS=10V and can withstand a maximum drain current (ID) of 40A. These features enable it to excel in high voltage and high current applications and is widely used in the field of power electronics.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Parameter Description
1. **Package Type**: TO247
The TO247 package has a large contact area and good heat dissipation performance, which is suitable for applications that need to handle high power and high current.
2. **Configuration**: Single-N-Channel
The single-N-Channel MOSFET configuration provides efficient current control capability and is suitable for various high voltage and high current switching applications.
3. **Drain-Source Voltage (VDS)**: 500V
The 500V drain-source voltage enables the MOSFET to handle high voltage loads and is suitable for high voltage switching and power conversion applications.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range increases design flexibility and ensures that the MOSFET can operate stably under various control voltage conditions.
5. **Gate Threshold Voltage (Vth)**: 3.8V
The 3.8V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
At a gate voltage of 10V, the 80mΩ on-resistance provides low conduction losses, helping to improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 40A
The maximum drain current is 40A, which is suitable for handling medium and high current loads and can work stably in various switching and control applications.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent conductive performance and low on-resistance, suitable for high voltage and high current switching applications.
1. **Package Type**: TO247
The TO247 package has a large contact area and good heat dissipation performance, which is suitable for applications that need to handle high power and high current.
2. **Configuration**: Single-N-Channel
The single-N-Channel MOSFET configuration provides efficient current control capability and is suitable for various high voltage and high current switching applications.
3. **Drain-Source Voltage (VDS)**: 500V
The 500V drain-source voltage enables the MOSFET to handle high voltage loads and is suitable for high voltage switching and power conversion applications.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range increases design flexibility and ensures that the MOSFET can operate stably under various control voltage conditions.
5. **Gate Threshold Voltage (Vth)**: 3.8V
The 3.8V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
At a gate voltage of 10V, the 80mΩ on-resistance provides low conduction losses, helping to improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 40A
The maximum drain current is 40A, which is suitable for handling medium and high current loads and can work stably in various switching and control applications.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent conductive performance and low on-resistance, suitable for high voltage and high current switching applications.
Domain and module applications：
Applicable fields and modules
FMH20N50ES-VB MOSFET is suitable for the following fields and modules:
1. **Power management system**
In power management systems, FMH20N50ES-VB can efficiently handle medium and high voltage and current loads, such as DC-DC converters and power modules. Its high voltage tolerance and low on-resistance help improve power conversion efficiency and system stability.
2. **Switch Mode Power Supply (SMPS)**
In switch mode power supply applications, FMH20N50ES-VB is suitable for high voltage power regulation and conversion modules. Its 500V voltage level and 40A current handling capability can effectively support the needs of high power supply systems.
3. **Motor drive system**
FMH20N50ES-VB can control high voltage and high current motors in motor drive systems, and is suitable for industrial motors, power tools and automotive motor drive systems, providing stable and efficient motor control.
4. **Power amplifier**
This MOSFET is used as a switching element in the power amplifier, capable of handling high voltage and high current, and is suitable for broadcast transmitters, audio power amplifiers and high power RF applications.
5. **High voltage switching circuits**
FMH20N50ES-VB is suitable for high voltage switching circuits such as load switches and power protection switches, capable of handling high voltage loads, providing reliable current control and switching functions.
6. **Automotive electronics**
In automotive electronic systems, FMH20N50ES-VB can be used in high voltage and high current switching applications, suitable for automotive power management, electric vehicle drive systems and high power switch modules.
With its high voltage handling capability, low on-resistance and excellent current handling capability, FMH20N50ES-VB is suitable for power management, switch mode power supplies, motor drives, power amplifiers, high voltage switching circuits and automotive electronics, providing efficient and reliable solutions.
FMH20N50ES-VB MOSFET is suitable for the following fields and modules:
1. **Power management system**
In power management systems, FMH20N50ES-VB can efficiently handle medium and high voltage and current loads, such as DC-DC converters and power modules. Its high voltage tolerance and low on-resistance help improve power conversion efficiency and system stability.
2. **Switch Mode Power Supply (SMPS)**
In switch mode power supply applications, FMH20N50ES-VB is suitable for high voltage power regulation and conversion modules. Its 500V voltage level and 40A current handling capability can effectively support the needs of high power supply systems.
3. **Motor drive system**
FMH20N50ES-VB can control high voltage and high current motors in motor drive systems, and is suitable for industrial motors, power tools and automotive motor drive systems, providing stable and efficient motor control.
4. **Power amplifier**
This MOSFET is used as a switching element in the power amplifier, capable of handling high voltage and high current, and is suitable for broadcast transmitters, audio power amplifiers and high power RF applications.
5. **High voltage switching circuits**
FMH20N50ES-VB is suitable for high voltage switching circuits such as load switches and power protection switches, capable of handling high voltage loads, providing reliable current control and switching functions.
6. **Automotive electronics**
In automotive electronic systems, FMH20N50ES-VB can be used in high voltage and high current switching applications, suitable for automotive power management, electric vehicle drive systems and high power switch modules.
With its high voltage handling capability, low on-resistance and excellent current handling capability, FMH20N50ES-VB is suitable for power management, switch mode power supplies, motor drives, power amplifiers, high voltage switching circuits and automotive electronics, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
