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FMH16N60ES-VB Product details
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1. FMH16N60ES-VB Product Introduction
FMH16N60ES-VB is a high-voltage single N-channel MOSFET in TO247 package, designed for applications that require high voltage and high current handling capabilities. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) can withstand ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ at a 10V gate drive, and the maximum drain current (ID) is 20A. The device uses super junction (SJ) and multi-epitaxial (Multi-EPI) technology, with lower conduction losses and higher power density, making it an ideal choice for high-performance and high-reliability applications.
FMH16N60ES-VB is a high-voltage single N-channel MOSFET in TO247 package, designed for applications that require high voltage and high current handling capabilities. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) can withstand ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ at a 10V gate drive, and the maximum drain current (ID) is 20A. The device uses super junction (SJ) and multi-epitaxial (Multi-EPI) technology, with lower conduction losses and higher power density, making it an ideal choice for high-performance and high-reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. FMH16N60ES-VB Detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction multi-epitaxial technology (SJ_Multi-EPI)
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction multi-epitaxial technology (SJ_Multi-EPI)
Domain and module applications：
3. Application fields and module examples of FMH16N60ES-VB
FMH16N60ES-VB MOSFET is very suitable for the following fields and modules due to its high voltage and high current capabilities, coupled with low on-resistance:
1. **Inverter circuit**: FMH16N60ES-VB is very suitable as a power switching device in high-voltage inverter applications. Its 650V voltage tolerance and 20A current handling capability can efficiently convert DC to AC, suitable for solar inverters, UPS systems, etc.
2. **Electric vehicle charging pile**: In electric vehicle charging piles, MOSFETs need to handle higher voltages and currents. The low on-resistance and high power density of FMH16N60ES-VB enable it to reduce energy losses, improve charging efficiency and system reliability.
3. **Industrial Power**: In industrial power applications, FMH16N60ES-VB can handle input voltages up to 650V, suitable for high-power power modules. Its high efficiency enables the system to operate stably for a long time under high load, suitable for applications such as servo motor drives and industrial inverters.
4. **High-voltage Lighting System**: FMH16N60ES-VB can also be used in high-voltage LED drive circuits and HID lighting systems. Its high voltage capability ensures stability under high-voltage driving conditions, reduces system losses, and improves overall lighting efficiency and life.
FMH16N60ES-VB MOSFET is very suitable for the following fields and modules due to its high voltage and high current capabilities, coupled with low on-resistance:
1. **Inverter circuit**: FMH16N60ES-VB is very suitable as a power switching device in high-voltage inverter applications. Its 650V voltage tolerance and 20A current handling capability can efficiently convert DC to AC, suitable for solar inverters, UPS systems, etc.
2. **Electric vehicle charging pile**: In electric vehicle charging piles, MOSFETs need to handle higher voltages and currents. The low on-resistance and high power density of FMH16N60ES-VB enable it to reduce energy losses, improve charging efficiency and system reliability.
3. **Industrial Power**: In industrial power applications, FMH16N60ES-VB can handle input voltages up to 650V, suitable for high-power power modules. Its high efficiency enables the system to operate stably for a long time under high load, suitable for applications such as servo motor drives and industrial inverters.
4. **High-voltage Lighting System**: FMH16N60ES-VB can also be used in high-voltage LED drive circuits and HID lighting systems. Its high voltage capability ensures stability under high-voltage driving conditions, reduces system losses, and improves overall lighting efficiency and life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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