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FMB80N10T2-VB Product details
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1. Product Introduction
FMB80N10T2-VB is a single N-channel MOSFET in TO263 package, designed for high current and high voltage power switching applications. The device has a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A. It uses advanced Trench technology to maintain low on-resistance (RDS(ON)) at lower gate voltages, thereby improving efficiency and reducing energy consumption. Its on-resistance is 10mΩ at VGS=10V, which is suitable for high power demand applications such as power electronics and industrial control.
FMB80N10T2-VB is a single N-channel MOSFET in TO263 package, designed for high current and high voltage power switching applications. The device has a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A. It uses advanced Trench technology to maintain low on-resistance (RDS(ON)) at lower gate voltages, thereby improving efficiency and reducing energy consumption. Its on-resistance is 10mΩ at VGS=10V, which is suitable for high power demand applications such as power electronics and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
- **Model**: FMB80N10T2-VB
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 375W
- **Model**: FMB80N10T2-VB
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 375W
Domain and module applications：
3. Application fields and module examples
1. **Motor control system**: FMB80N10T2-VB is very suitable for motor control systems. Its high current handling capability and low on-resistance can effectively drive DC motors and stepper motors, and are used in industrial automation equipment, robots and electric vehicle drive systems.
2. **Power management system**: In efficient power management systems, this MOSFET can be used in switching power supplies (SMPS) and DC-DC converters. Its low on-resistance helps reduce power consumption during the conversion process and improve power efficiency. It is suitable for power management of server power modules, communication equipment power supplies and consumer electronics.
3. **Battery management system**: FMB80N10T2-VB is also suitable for battery management systems, especially the charge and discharge control of high-capacity lithium batteries. In electric vehicle (EV) and uninterruptible power supply (UPS) systems, the device can effectively manage high current flow to ensure safe and efficient operation of batteries.
4. **Solar Inverter**: In solar power generation systems, this MOSFET can be used in solar inverters. Its high withstand voltage and low loss characteristics enable it to effectively convert solar energy into electrical energy, and is used in residential, commercial, and industrial-scale solar power generation.
With its high current carrying capacity, low on-resistance, and excellent thermal performance, FMB80N10T2-VB provides reliable and efficient solutions in the fields of motor control, power management, battery management, and solar inverters, meeting diverse power electronics needs.
1. **Motor control system**: FMB80N10T2-VB is very suitable for motor control systems. Its high current handling capability and low on-resistance can effectively drive DC motors and stepper motors, and are used in industrial automation equipment, robots and electric vehicle drive systems.
2. **Power management system**: In efficient power management systems, this MOSFET can be used in switching power supplies (SMPS) and DC-DC converters. Its low on-resistance helps reduce power consumption during the conversion process and improve power efficiency. It is suitable for power management of server power modules, communication equipment power supplies and consumer electronics.
3. **Battery management system**: FMB80N10T2-VB is also suitable for battery management systems, especially the charge and discharge control of high-capacity lithium batteries. In electric vehicle (EV) and uninterruptible power supply (UPS) systems, the device can effectively manage high current flow to ensure safe and efficient operation of batteries.
4. **Solar Inverter**: In solar power generation systems, this MOSFET can be used in solar inverters. Its high withstand voltage and low loss characteristics enable it to effectively convert solar energy into electrical energy, and is used in residential, commercial, and industrial-scale solar power generation.
With its high current carrying capacity, low on-resistance, and excellent thermal performance, FMB80N10T2-VB provides reliable and efficient solutions in the fields of motor control, power management, battery management, and solar inverters, meeting diverse power electronics needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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