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FMA16N50E-VB Product details
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Product Introduction
**FMA16N50E-VB** is a single N-channel power MOSFET with a TO220F package type suitable for high-voltage applications. Its drain-source withstand voltage (VDS) is 550V, enabling it to operate stably in a high-voltage environment. The maximum gate-source voltage (VGS) is ±30V, providing a wide control voltage range. The threshold voltage (Vth) is 3V, ensuring that the MOSFET is turned on at a reasonable gate voltage. The on-resistance (RDS(ON)) of this model is 260mΩ (VGS=10V), giving it low losses in the on state. The maximum continuous drain current (ID) of the FMA16N50E-VB is 18A, which is sufficient to cope with various high current requirements. Using planar technology (Plannar), this MOSFET provides reliable performance and good current handling capability in high-voltage applications.
**FMA16N50E-VB** is a single N-channel power MOSFET with a TO220F package type suitable for high-voltage applications. Its drain-source withstand voltage (VDS) is 550V, enabling it to operate stably in a high-voltage environment. The maximum gate-source voltage (VGS) is ±30V, providing a wide control voltage range. The threshold voltage (Vth) is 3V, ensuring that the MOSFET is turned on at a reasonable gate voltage. The on-resistance (RDS(ON)) of this model is 260mΩ (VGS=10V), giving it low losses in the on state. The maximum continuous drain current (ID) of the FMA16N50E-VB is 18A, which is sufficient to cope with various high current requirements. Using planar technology (Plannar), this MOSFET provides reliable performance and good current handling capability in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FMA16N50E-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 18A
- **Technology**: Plannar technology
- **Model**: FMA16N50E-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 18A
- **Technology**: Plannar technology
Domain and module applications：
Applications and Modules
1. **Switching Power Supply (SMPS)**: The FMA16N50E-VB is ideal for use in switching power supplies (SMPS), especially in high-voltage converters. Its 550V withstand voltage capability and low on-resistance enable it to excel in high-efficiency switching mode, which can significantly improve system efficiency and reduce power losses.
2. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used as a high-voltage isolation switch and current controller. Its high-voltage withstand capability and 18A current handling capability ensure the safe operation of battery packs, suitable for large battery systems such as electric vehicles and energy storage systems.
3. **Inverter**: The FMA16N50E-VB is suitable for inverter applications, especially in applications requiring high voltage and medium current. The low on-resistance of the MOSFET helps improve the conversion efficiency of the inverter and reduce heat loss, making it perform well in solar power generation and uninterruptible power supply (UPS) systems.
4. **Industrial Motor Drive**: This MOSFET can also be used in the field of industrial motor drive. Its high voltage resistance and good current handling performance make it suitable for high-voltage motor drive applications such as industrial automation and elevator control systems. Through planar technology, the FMA16N50E-VB can work stably under high stress conditions, ensuring the reliability and efficiency of motor drives.
In summary, the FMA16N50E-VB is a reliable and efficient power MOSFET, especially suitable for high-voltage and high-current fields such as switching power supplies, battery management systems, inverters and industrial motor drives. Its excellent electrical performance and high reliability make it an ideal choice for these fields.
1. **Switching Power Supply (SMPS)**: The FMA16N50E-VB is ideal for use in switching power supplies (SMPS), especially in high-voltage converters. Its 550V withstand voltage capability and low on-resistance enable it to excel in high-efficiency switching mode, which can significantly improve system efficiency and reduce power losses.
2. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used as a high-voltage isolation switch and current controller. Its high-voltage withstand capability and 18A current handling capability ensure the safe operation of battery packs, suitable for large battery systems such as electric vehicles and energy storage systems.
3. **Inverter**: The FMA16N50E-VB is suitable for inverter applications, especially in applications requiring high voltage and medium current. The low on-resistance of the MOSFET helps improve the conversion efficiency of the inverter and reduce heat loss, making it perform well in solar power generation and uninterruptible power supply (UPS) systems.
4. **Industrial Motor Drive**: This MOSFET can also be used in the field of industrial motor drive. Its high voltage resistance and good current handling performance make it suitable for high-voltage motor drive applications such as industrial automation and elevator control systems. Through planar technology, the FMA16N50E-VB can work stably under high stress conditions, ensuring the reliability and efficiency of motor drives.
In summary, the FMA16N50E-VB is a reliable and efficient power MOSFET, especially suitable for high-voltage and high-current fields such as switching power supplies, battery management systems, inverters and industrial motor drives. Its excellent electrical performance and high reliability make it an ideal choice for these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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