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FM220BTF-VB Product details
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Product Introduction
FM220BTF-VB is a high-performance single N-channel MOSFET in a SOT223 package designed for medium voltage and medium current applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for switching applications in the medium voltage range. Its gate-source voltage (VGS) range is ±20V and the gate threshold voltage (Vth) is 3V, which enables the MOSFET to operate stably at a lower gate voltage. Using Trench technology, FM220BTF-VB provides an on-resistance (RDS(ON)) of 283mΩ @VGS=10V and can withstand a maximum drain current (ID) of 3A. This combination of features enables it to perform well in applications requiring high efficiency and reliability.
FM220BTF-VB is a high-performance single N-channel MOSFET in a SOT223 package designed for medium voltage and medium current applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for switching applications in the medium voltage range. Its gate-source voltage (VGS) range is ±20V and the gate threshold voltage (Vth) is 3V, which enables the MOSFET to operate stably at a lower gate voltage. Using Trench technology, FM220BTF-VB provides an on-resistance (RDS(ON)) of 283mΩ @VGS=10V and can withstand a maximum drain current (ID) of 3A. This combination of features enables it to perform well in applications requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 3A | 283mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Parameter Description
1. **Package Type**: SOT223
The SOT223 package provides compact size and good heat dissipation performance, suitable for space-constrained applications and occasions requiring medium power heat dissipation.
2. **Configuration**: Single-N-Channel
The single-N-Channel MOSFET configuration is suitable for efficient current switching and control applications, and performs well in various switching circuits and power amplification applications.
3. **Drain-Source Voltage (VDS)**: 200V
The 200V drain-source voltage enables the MOSFET to handle medium voltage loads and is suitable for medium voltage switching applications.
4. **Gate-Source Voltage (VGS)**: ±20V
The ±20V gate-source voltage range provides design flexibility, ensuring that the MOSFET can operate stably under various control voltage conditions.
5. **Gate Threshold Voltage (Vth)**: 3V
The 3V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 283mΩ @ VGS=10V
At a gate voltage of 10V, the 283mΩ on-resistance provides low conduction loss, which helps improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 3A
The maximum drain current is 3A, which is suitable for handling medium current loads and can work stably in various switching and control applications.
8. **Technology Type**: Trench
Trench technology provides excellent conductive performance and low on-resistance, suitable for high-efficiency switching and power amplification applications.
1. **Package Type**: SOT223
The SOT223 package provides compact size and good heat dissipation performance, suitable for space-constrained applications and occasions requiring medium power heat dissipation.
2. **Configuration**: Single-N-Channel
The single-N-Channel MOSFET configuration is suitable for efficient current switching and control applications, and performs well in various switching circuits and power amplification applications.
3. **Drain-Source Voltage (VDS)**: 200V
The 200V drain-source voltage enables the MOSFET to handle medium voltage loads and is suitable for medium voltage switching applications.
4. **Gate-Source Voltage (VGS)**: ±20V
The ±20V gate-source voltage range provides design flexibility, ensuring that the MOSFET can operate stably under various control voltage conditions.
5. **Gate Threshold Voltage (Vth)**: 3V
The 3V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 283mΩ @ VGS=10V
At a gate voltage of 10V, the 283mΩ on-resistance provides low conduction loss, which helps improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 3A
The maximum drain current is 3A, which is suitable for handling medium current loads and can work stably in various switching and control applications.
8. **Technology Type**: Trench
Trench technology provides excellent conductive performance and low on-resistance, suitable for high-efficiency switching and power amplification applications.
Domain and module applications：
Applicable fields and modules
FM220BTF-VB MOSFET is suitable for the following fields and modules:
1. **Power management system**
In power management systems, FM220BTF-VB can efficiently handle medium current loads, such as DC-DC converters and power modules. Its low on-resistance and high current capability help improve power conversion efficiency and stability.
2. **Switch Mode Power Supply (SMPS)**
In switch mode power supply applications, FM220BTF-VB is suitable for power regulation and conversion modules. Its 200V voltage level and 3A current handling capability enable it to efficiently handle medium power switching applications.
3. **Motor drive system**
FM220BTF-VB is suitable for motor drive systems, such as DC motor drives. Its high current handling capability and good conductivity ensure stable control and efficient operation of the motor.
4. **Automotive electronics**
In automotive electronic systems, FM220BTF-VB can be used to control and switch various electronic devices and loads in the car, providing stable current control and efficient switching performance.
5. **Power switching circuit**
This MOSFET is suitable for power switching circuits such as load switches and power protection switches, and can handle medium current loads, providing reliable current control and switching functions.
6. **Small power amplifier**
FM220BTF-VB can be used in small power amplifiers, suitable for broadcast, audio and signal amplification applications. Its low on-resistance and medium current capability provide efficient power amplification and signal processing.
With its high efficiency, moderate voltage level and excellent conductive performance, FM220BTF-VB is suitable for application fields such as power management, switch mode power supply, motor drive, automotive electronics and power switching circuits, providing reliable and efficient solutions.
FM220BTF-VB MOSFET is suitable for the following fields and modules:
1. **Power management system**
In power management systems, FM220BTF-VB can efficiently handle medium current loads, such as DC-DC converters and power modules. Its low on-resistance and high current capability help improve power conversion efficiency and stability.
2. **Switch Mode Power Supply (SMPS)**
In switch mode power supply applications, FM220BTF-VB is suitable for power regulation and conversion modules. Its 200V voltage level and 3A current handling capability enable it to efficiently handle medium power switching applications.
3. **Motor drive system**
FM220BTF-VB is suitable for motor drive systems, such as DC motor drives. Its high current handling capability and good conductivity ensure stable control and efficient operation of the motor.
4. **Automotive electronics**
In automotive electronic systems, FM220BTF-VB can be used to control and switch various electronic devices and loads in the car, providing stable current control and efficient switching performance.
5. **Power switching circuit**
This MOSFET is suitable for power switching circuits such as load switches and power protection switches, and can handle medium current loads, providing reliable current control and switching functions.
6. **Small power amplifier**
FM220BTF-VB can be used in small power amplifiers, suitable for broadcast, audio and signal amplification applications. Its low on-resistance and medium current capability provide efficient power amplification and signal processing.
With its high efficiency, moderate voltage level and excellent conductive performance, FM220BTF-VB is suitable for application fields such as power management, switch mode power supply, motor drive, automotive electronics and power switching circuits, providing reliable and efficient solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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