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FL31N20D-VB Product details
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Product Introduction
FL31N20D-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and medium voltage. The drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for medium and high voltage switching applications. Its gate-source voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 3V, ensuring that the MOSFET can operate stably at lower gate voltages. FL31N20D-VB uses Trench technology to provide an on-resistance (RDS(ON)) of 48mΩ @VGS=10V and a maximum drain current of 40A. This feature enables it to excel in high current and high efficiency switching applications.
FL31N20D-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and medium voltage. The drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for medium and high voltage switching applications. Its gate-source voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 3V, ensuring that the MOSFET can operate stably at lower gate voltages. FL31N20D-VB uses Trench technology to provide an on-resistance (RDS(ON)) of 48mΩ @VGS=10V and a maximum drain current of 40A. This feature enables it to excel in high current and high efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter Description
1. **Package Type**: TO263
TO263 package is suitable for medium power applications, with good heat dissipation and mechanical strength, suitable for high current switching modules.
2. **Configuration**: Single-N-Channel
Single-N-Channel MOSFET configuration provides efficient current control capability and is suitable for switching circuits and power amplifier applications.
3. **Drain-Source Voltage (VDS)**: 200V
The 200V drain-source voltage makes the MOSFET suitable for medium and high voltage applications and can handle higher voltage loads.
4. **Gate-Source Voltage (VGS)**: ±20V
The ±20V gate-source voltage range increases design flexibility and ensures stable operation of the MOSFET under various control voltage conditions.
5. **Gate Threshold Voltage (Vth)**: 3V
The 3V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
At a gate voltage of 10V, the 48mΩ on-resistance provides low conduction losses, helping to improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 40A
The maximum drain current of 40A makes the MOSFET suitable for handling high current loads and suitable for high current switching applications.
8. **Technology Type**: Trench
Trench technology provides excellent conductive performance and low on-resistance, suitable for high-efficiency switching and power amplification applications.
1. **Package Type**: TO263
TO263 package is suitable for medium power applications, with good heat dissipation and mechanical strength, suitable for high current switching modules.
2. **Configuration**: Single-N-Channel
Single-N-Channel MOSFET configuration provides efficient current control capability and is suitable for switching circuits and power amplifier applications.
3. **Drain-Source Voltage (VDS)**: 200V
The 200V drain-source voltage makes the MOSFET suitable for medium and high voltage applications and can handle higher voltage loads.
4. **Gate-Source Voltage (VGS)**: ±20V
The ±20V gate-source voltage range increases design flexibility and ensures stable operation of the MOSFET under various control voltage conditions.
5. **Gate Threshold Voltage (Vth)**: 3V
The 3V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving switching efficiency and response speed.
6. **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
At a gate voltage of 10V, the 48mΩ on-resistance provides low conduction losses, helping to improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 40A
The maximum drain current of 40A makes the MOSFET suitable for handling high current loads and suitable for high current switching applications.
8. **Technology Type**: Trench
Trench technology provides excellent conductive performance and low on-resistance, suitable for high-efficiency switching and power amplification applications.
Domain and module applications：
Applicable fields and modules
FL31N20D-VB MOSFET is suitable for the following fields and modules:
1. **Power management system**
In power management systems, FL31N20D-VB is able to handle high current loads such as DC-DC converters and power modules. Its high current handling capability and low on-resistance help improve power conversion efficiency and stability.
2. **Motor drive system**
In motor drive systems, FL31N20D-VB is able to control high current motors and provide stable switching performance. Suitable for industrial motors, power tools and automotive motor drive systems.
3. **Switch mode power supply (SMPS)**
In switch mode power supply applications, FL31N20D-VB is able to efficiently handle medium and high voltages and high currents, suitable for power regulation and conversion modules, and provides efficient power conversion.
4. **Power amplifier**
This MOSFET is used as a switching element in the power amplifier and can handle high currents. It is suitable for broadcast transmitters, audio power amplifiers and high-power RF applications.
5. **High current switching circuit**
FL31N20D-VB can work stably in high current switching circuits, such as load switches and power protection switches, providing reliable current control and switching functions.
6. **Automotive electronics**
In automotive electronic systems, FL31N20D-VB can handle motor drive and high current switching, suitable for automotive power management, on-board motors and high power switching applications.
With its high current handling capability, moderate voltage tolerance and low on-resistance, FL31N20D-VB provides an efficient solution in applications such as power management, motor drive, switch-mode power supply, power amplifier and high current switching circuits.
FL31N20D-VB MOSFET is suitable for the following fields and modules:
1. **Power management system**
In power management systems, FL31N20D-VB is able to handle high current loads such as DC-DC converters and power modules. Its high current handling capability and low on-resistance help improve power conversion efficiency and stability.
2. **Motor drive system**
In motor drive systems, FL31N20D-VB is able to control high current motors and provide stable switching performance. Suitable for industrial motors, power tools and automotive motor drive systems.
3. **Switch mode power supply (SMPS)**
In switch mode power supply applications, FL31N20D-VB is able to efficiently handle medium and high voltages and high currents, suitable for power regulation and conversion modules, and provides efficient power conversion.
4. **Power amplifier**
This MOSFET is used as a switching element in the power amplifier and can handle high currents. It is suitable for broadcast transmitters, audio power amplifiers and high-power RF applications.
5. **High current switching circuit**
FL31N20D-VB can work stably in high current switching circuits, such as load switches and power protection switches, providing reliable current control and switching functions.
6. **Automotive electronics**
In automotive electronic systems, FL31N20D-VB can handle motor drive and high current switching, suitable for automotive power management, on-board motors and high power switching applications.
With its high current handling capability, moderate voltage tolerance and low on-resistance, FL31N20D-VB provides an efficient solution in applications such as power management, motor drive, switch-mode power supply, power amplifier and high current switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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