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FL210-VB Product details

Product introduction:

1. FL210-VB Product Introduction

FL210-VB is a high-voltage N-channel power MOSFET, packaged in SOT223 and designed based on Trench technology. This MOSFET has a drain-source withstand voltage (VDS) of 200V, supports a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 1200mΩ at VGS=10V, and its maximum drain current (ID) is 1A. The design of FL210-VB focuses on high-voltage tolerance and relatively low on-resistance, making it suitable for a variety of medium-voltage, high-voltage switch applications such as power management, battery protection, and low-power switching circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 200V 3V 1A 1200mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 200V 3V 1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 200V 3V 1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
2. FL210-VB Detailed parameter description

- **Model**: FL210-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1200mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench technology
- **Switching characteristics**: High voltage withstand capability, relatively low on-resistance
- **Temperature range**: -55°C ~ 150°C (junction temperature)
- **Application environment**: For medium voltage and high withstand voltage switching applications

Domain and module applications:

III. FL210-VB Applicable Fields and Modules

FL210-VB is mainly applicable to the following fields and modules:

1. **Power Management System**: FL210-VB's 200V drain-source withstand voltage makes it suitable for switching applications in power management systems, such as DC-DC converters and power switches. Its high withstand voltage capability ensures stable performance during power conversion, especially for power management modules that require high withstand voltage.

2. **Battery Protection Circuit**: In the battery protection circuit, FL210-VB can be used as a switching element to protect the battery from overvoltage or overcurrent. Its high voltage withstand capability and relatively low on-resistance provide reliable performance for the battery protection circuit, ensuring the safety and stability of the battery.

3. **Low-power Switching Circuit**: FL210-VB is suitable for low-power switching circuits, such as switching power supplies, relay drivers, and low-power switching modules. It is designed for medium voltage applications, enabling it to effectively handle small power loads and provide stable switching performance.

4. **Automotive electronics**: In automotive electronic systems, FL210-VB can be used for low power load switching, such as on-board power management and signal switching. Its high voltage withstand capability and small package make it suitable for use in automotive environments, meeting the reliability requirements of automotive electronic systems.

5. **Communication equipment**: FL210-VB is also suitable for switching applications in communication equipment, such as RF switches and signal processing modules. Its high voltage withstand capability and moderate on-resistance ensure stable and efficient signal switching in communication equipment.

In summary, FL210-VB is a power MOSFET suitable for medium voltage and high withstand voltage switching applications. Its high voltage withstand capability and low on-resistance enable it to perform well in power management, battery protection, small power switching, automotive electronics, and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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