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FL110N-VB Product details
Back to previous pageProduct introduction：
1. FL110N-VB MOSFET Product Introduction
FL110N-VB is a high-performance N-channel MOSFET in SOT-223 package, designed for medium voltage and current applications. The drain-source withstand voltage of this MOSFET is 100V, and the gate-source voltage can reach ±20V, which is suitable for operation in medium voltage environments. Its turn-on voltage is 1.8V, and the on-resistance is 100mΩ at VGS=10V, which can support a drain current of up to 5A. Using Trench technology, this MOSFET provides excellent low on-resistance and switching performance, suitable for power switching and current control applications.
FL110N-VB is a high-performance N-channel MOSFET in SOT-223 package, designed for medium voltage and current applications. The drain-source withstand voltage of this MOSFET is 100V, and the gate-source voltage can reach ±20V, which is suitable for operation in medium voltage environments. Its turn-on voltage is 1.8V, and the on-resistance is 100mΩ at VGS=10V, which can support a drain current of up to 5A. Using Trench technology, this MOSFET provides excellent low on-resistance and switching performance, suitable for power switching and current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. FL110N-VB MOSFET Detailed parameter description
1. **Package type**: SOT-223
- The SOT-223 package provides good heat dissipation and compact size, suitable for space-constrained applications.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for medium voltage and current control, and can effectively manage current flow.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, suitable for medium voltage environments, and can handle voltage loads within a certain range.
4. **Gate-source voltage (VGS)**: ±20V
- The gate voltage range is ±20V, supporting a variety of gate drive voltages to ensure stable operation.
5. **Throw-On Voltage (Vth)**: 1.8V
- The turn-on voltage is 1.8V, which enables the MOSFET to be reliably turned on at a lower gate voltage, suitable for low gate voltage control applications.
6. **On-Resistance (RDS(ON))**:
- **120mΩ @ VGS=4.5V**
- **100mΩ @ VGS=10V**
- Low on-resistance provides better power management, reducing power consumption and heat generation.
7. **Drain Current (ID)**: 5A
- The maximum drain current is 5A, suitable for medium current application requirements.
8. **Technology Type**: Trench Technology
- Trench technology provides excellent low on-resistance and switching performance, improving efficiency and switching speed.
1. **Package type**: SOT-223
- The SOT-223 package provides good heat dissipation and compact size, suitable for space-constrained applications.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for medium voltage and current control, and can effectively manage current flow.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, suitable for medium voltage environments, and can handle voltage loads within a certain range.
4. **Gate-source voltage (VGS)**: ±20V
- The gate voltage range is ±20V, supporting a variety of gate drive voltages to ensure stable operation.
5. **Throw-On Voltage (Vth)**: 1.8V
- The turn-on voltage is 1.8V, which enables the MOSFET to be reliably turned on at a lower gate voltage, suitable for low gate voltage control applications.
6. **On-Resistance (RDS(ON))**:
- **120mΩ @ VGS=4.5V**
- **100mΩ @ VGS=10V**
- Low on-resistance provides better power management, reducing power consumption and heat generation.
7. **Drain Current (ID)**: 5A
- The maximum drain current is 5A, suitable for medium current application requirements.
8. **Technology Type**: Trench Technology
- Trench technology provides excellent low on-resistance and switching performance, improving efficiency and switching speed.
Domain and module applications：
III. FL110N-VB Application Fields and Module Examples
1. **Switching Power Supply (SMPS)**:
- In the switching power supply (SMPS), FL110N-VB is able to efficiently switch and control current. Its low on-resistance and moderate current capability make it very suitable for high-efficiency power conversion and stable power switching applications.
2. **Battery Management System**:
- In the battery management system, FL110N-VB is suitable for battery switching and protection circuits. Its low on-resistance and low turn-on voltage enable it to efficiently control the current flow in battery management and protect the battery from overcurrent or short circuit.
3. **LED Drive Circuit**:
- This MOSFET can be used in LED drive circuits to efficiently control the current of the LED, ensuring stable brightness and efficient energy use. Its small SOT-223 package is suitable for compact LED drive designs.
4. **Power Tools and Appliance Control**:
- In power tools and appliances, FL110N-VB can be used for power switching and control circuits. Its high current capability and low on-resistance ensure efficient current management and stable equipment operation.
5. **Power Amplifier and Audio Equipment**:
- FL110N-VB is also suitable for switching applications in power amplifiers and audio equipment, where its low on-resistance and high current capability ensure clear transmission of audio signals and stable operation of power amplifiers.
Through these application examples, FL110N-VB shows its superior performance in medium voltage and current control applications, making it an ideal choice for efficient power management and switching circuits.
1. **Switching Power Supply (SMPS)**:
- In the switching power supply (SMPS), FL110N-VB is able to efficiently switch and control current. Its low on-resistance and moderate current capability make it very suitable for high-efficiency power conversion and stable power switching applications.
2. **Battery Management System**:
- In the battery management system, FL110N-VB is suitable for battery switching and protection circuits. Its low on-resistance and low turn-on voltage enable it to efficiently control the current flow in battery management and protect the battery from overcurrent or short circuit.
3. **LED Drive Circuit**:
- This MOSFET can be used in LED drive circuits to efficiently control the current of the LED, ensuring stable brightness and efficient energy use. Its small SOT-223 package is suitable for compact LED drive designs.
4. **Power Tools and Appliance Control**:
- In power tools and appliances, FL110N-VB can be used for power switching and control circuits. Its high current capability and low on-resistance ensure efficient current management and stable equipment operation.
5. **Power Amplifier and Audio Equipment**:
- FL110N-VB is also suitable for switching applications in power amplifiers and audio equipment, where its low on-resistance and high current capability ensure clear transmission of audio signals and stable operation of power amplifiers.
Through these application examples, FL110N-VB shows its superior performance in medium voltage and current control applications, making it an ideal choice for efficient power management and switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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