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FL1006N-VB Product details
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FL1006N-VB MOSFET Product Introduction
FL1006N-VB is a low voltage, high performance, single channel N-channel power MOSFET in a SOT223 package. The MOSFET features a maximum drain-source voltage of 60V and a high continuous drain current of 4.5A. Based on advanced trench technology, the FL1006N-VB offers a low on-resistance (RDS(ON) = 85mΩ @ VGS = 4.5V and RDS(ON) = 76mΩ @ VGS = 10V), enabling efficient power transfer at lower gate voltages. The gate threshold voltage (Vth) is 1.7V, making it suitable for stable turn-on at low gate drive voltages. Designed for efficient low voltage applications, the FL1006N-VB is suitable for a variety of circuits requiring low power consumption and high performance.
FL1006N-VB is a low voltage, high performance, single channel N-channel power MOSFET in a SOT223 package. The MOSFET features a maximum drain-source voltage of 60V and a high continuous drain current of 4.5A. Based on advanced trench technology, the FL1006N-VB offers a low on-resistance (RDS(ON) = 85mΩ @ VGS = 4.5V and RDS(ON) = 76mΩ @ VGS = 10V), enabling efficient power transfer at lower gate voltages. The gate threshold voltage (Vth) is 1.7V, making it suitable for stable turn-on at low gate drive voltages. Designed for efficient low voltage applications, the FL1006N-VB is suitable for a variety of circuits requiring low power consumption and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
FL1006N-VB MOSFET Detailed parameter description
- **Model**: FL1006N-VB
- **Package**: SOT223
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Power consumption (Ptot)**: 1.6W (please refer to the data sheet for specific values)
- **Model**: FL1006N-VB
- **Package**: SOT223
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Power consumption (Ptot)**: 1.6W (please refer to the data sheet for specific values)
Domain and module applications：
FL1006N-VB Applications and Module Examples
1. **Low Voltage Switching Circuits**: FL1006N-VB is ideal for low voltage switching circuits such as low power switching power supplies and power management modules. Its low on-resistance and low gate drive voltage enable it to switch current efficiently, reducing power consumption and improving system efficiency.
2. **Battery-Powered Devices**: In battery-powered devices, FL1006N-VB can be used as a power switch and protection circuit. Its efficient power transfer capability and low power consumption can extend battery life and ensure the stability of the device under different operating conditions.
3. **DC-DC Converters**: FL1006N-VB is suitable for switching elements in DC-DC converters. Its low on-resistance and high current handling capability ensure high efficiency of power conversion, helping to improve the overall performance and reliability of the converter.
4. **Consumer Electronics**: In consumer electronics devices, such as smartphones, tablets, and wearable devices, FL1006N-VB can be used for power management and switch control. Its small package and high efficiency are well suited for the stringent space and power requirements of modern electronics.
These application examples demonstrate the wide applicability of FL1006N-VB in low voltage and high-efficiency applications, providing efficient and reliable solutions for a variety of power management and switch control systems.
1. **Low Voltage Switching Circuits**: FL1006N-VB is ideal for low voltage switching circuits such as low power switching power supplies and power management modules. Its low on-resistance and low gate drive voltage enable it to switch current efficiently, reducing power consumption and improving system efficiency.
2. **Battery-Powered Devices**: In battery-powered devices, FL1006N-VB can be used as a power switch and protection circuit. Its efficient power transfer capability and low power consumption can extend battery life and ensure the stability of the device under different operating conditions.
3. **DC-DC Converters**: FL1006N-VB is suitable for switching elements in DC-DC converters. Its low on-resistance and high current handling capability ensure high efficiency of power conversion, helping to improve the overall performance and reliability of the converter.
4. **Consumer Electronics**: In consumer electronics devices, such as smartphones, tablets, and wearable devices, FL1006N-VB can be used for power management and switch control. Its small package and high efficiency are well suited for the stringent space and power requirements of modern electronics.
These application examples demonstrate the wide applicability of FL1006N-VB in low voltage and high-efficiency applications, providing efficient and reliable solutions for a variety of power management and switch control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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