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FKH0660-VB Product details
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1. FKH0660-VB MOSFET Product Introduction
FKH0660-VB is a high-performance N-channel MOSFET in TO-220F package, designed for high current applications. The drain-source withstand voltage of this MOSFET is 60V, and the gate-source voltage can reach ±20V, which is suitable for operation in medium voltage environments. Its turn-on voltage is 3V, and the on-resistance is only 2.6mΩ when VGS=10V, which can support a drain current of up to 210A. Based on Trench technology, this MOSFET provides extremely low on-resistance and excellent switching performance, suitable for high-power current management and high-efficiency switching applications.
FKH0660-VB is a high-performance N-channel MOSFET in TO-220F package, designed for high current applications. The drain-source withstand voltage of this MOSFET is 60V, and the gate-source voltage can reach ±20V, which is suitable for operation in medium voltage environments. Its turn-on voltage is 3V, and the on-resistance is only 2.6mΩ when VGS=10V, which can support a drain current of up to 210A. Based on Trench technology, this MOSFET provides extremely low on-resistance and excellent switching performance, suitable for high-power current management and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | 2.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FKH0660-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- The TO-220F package provides good heat dissipation performance and is suitable for applications that need to handle higher power.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for high current and high-efficiency switching applications, capable of handling large current flows and providing stable performance.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for medium voltage applications and capable of handling high current loads.
4. **Gate-source voltage (VGS)**: ±20V
- The gate voltage range is ±20V, supporting a variety of gate drive voltages to ensure stable operation.
5. **Throw-On Voltage (Vth)**: 3V
- The turn-on voltage is 3V, which enables the MOSFET to be reliably turned on at a lower gate voltage.
6. **On-Resistance (RDS(ON))**:
- **5mΩ @ VGS=4.5V**
- **2.6mΩ @ VGS=10V**
- The extremely low on-resistance provides extremely high current transfer efficiency, reducing power consumption and heat generation.
7. **Drain Current (ID)**: 210A
- The maximum drain current is 210A, which is suitable for handling ultra-high current applications and supporting high-power loads.
8. **Technology Type**: Trench Technology
- Trench technology provides extremely low on-resistance and excellent switching performance, improving efficiency and switching speed.
1. **Package type**: TO-220F
- The TO-220F package provides good heat dissipation performance and is suitable for applications that need to handle higher power.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for high current and high-efficiency switching applications, capable of handling large current flows and providing stable performance.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for medium voltage applications and capable of handling high current loads.
4. **Gate-source voltage (VGS)**: ±20V
- The gate voltage range is ±20V, supporting a variety of gate drive voltages to ensure stable operation.
5. **Throw-On Voltage (Vth)**: 3V
- The turn-on voltage is 3V, which enables the MOSFET to be reliably turned on at a lower gate voltage.
6. **On-Resistance (RDS(ON))**:
- **5mΩ @ VGS=4.5V**
- **2.6mΩ @ VGS=10V**
- The extremely low on-resistance provides extremely high current transfer efficiency, reducing power consumption and heat generation.
7. **Drain Current (ID)**: 210A
- The maximum drain current is 210A, which is suitable for handling ultra-high current applications and supporting high-power loads.
8. **Technology Type**: Trench Technology
- Trench technology provides extremely low on-resistance and excellent switching performance, improving efficiency and switching speed.
Domain and module applications：
3. FKH0660-VB Application Fields and Module Examples
1. **Power Management and Converters**:
- FKH0660-VB performs well in high-power power management and DC-DC converters. Its high current handling capability and low on-resistance make it suitable for high-efficiency power conversion, improving the overall efficiency and reliability of the system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
- In the power management systems of electric vehicles and hybrid vehicles, FKH0660-VB can effectively control high currents, support high-power motor drives and battery management, and ensure stable operation and long life of the system.
3. **Motor Drive Systems**:
- This MOSFET is suitable for motor drive systems, especially in industrial motor drives that require high current support. Its low on-resistance and high current capability ensure stable operation of the motor under various loads.
4. **High Power Switching Applications**:
- FKH0660-VB can be applied to high power switching circuits, such as high power load switching and power distribution systems. Its high current handling capability and excellent switching performance enable it to reliably switch high power loads.
5. **Data Center and Server Power Supply**:
- In the power management of data centers and servers, FKH0660-VB can provide efficient current management, support stable power supply of high power power supply, reduce energy loss, and improve the overall efficiency of the system.
Through these application examples, FKH0660-VB shows its superior performance in high current and high power applications, and is an ideal choice for efficient power management and high power switching.
1. **Power Management and Converters**:
- FKH0660-VB performs well in high-power power management and DC-DC converters. Its high current handling capability and low on-resistance make it suitable for high-efficiency power conversion, improving the overall efficiency and reliability of the system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
- In the power management systems of electric vehicles and hybrid vehicles, FKH0660-VB can effectively control high currents, support high-power motor drives and battery management, and ensure stable operation and long life of the system.
3. **Motor Drive Systems**:
- This MOSFET is suitable for motor drive systems, especially in industrial motor drives that require high current support. Its low on-resistance and high current capability ensure stable operation of the motor under various loads.
4. **High Power Switching Applications**:
- FKH0660-VB can be applied to high power switching circuits, such as high power load switching and power distribution systems. Its high current handling capability and excellent switching performance enable it to reliably switch high power loads.
5. **Data Center and Server Power Supply**:
- In the power management of data centers and servers, FKH0660-VB can provide efficient current management, support stable power supply of high power power supply, reduce energy loss, and improve the overall efficiency of the system.
Through these application examples, FKH0660-VB shows its superior performance in high current and high power applications, and is an ideal choice for efficient power management and high power switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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