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FK25SM-6-VB Product details
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Product Introduction
**FK25SM-6-VB** is a single N-channel power MOSFET packaged as TO3P. It has a drain-source withstand voltage (VDS) of 600V and is suitable for high-voltage switching applications. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, providing a wide control voltage range. Its threshold voltage (Vth) is 3.5V, ensuring reliable startup at the appropriate gate voltage. The on-resistance (RDS(ON)) of FK25SM-6-VB is 190mΩ at VGS=10V, providing stable conduction performance and effective power management. Its maximum continuous drain current (ID) is 20A, suitable for handling medium current loads. Using SJ_Multi-EPI technology, this MOSFET combines the advantages of the polysilicon layer, provides good switching performance and current handling capabilities, and is very suitable for high-voltage, high-power applications.
**FK25SM-6-VB** is a single N-channel power MOSFET packaged as TO3P. It has a drain-source withstand voltage (VDS) of 600V and is suitable for high-voltage switching applications. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, providing a wide control voltage range. Its threshold voltage (Vth) is 3.5V, ensuring reliable startup at the appropriate gate voltage. The on-resistance (RDS(ON)) of FK25SM-6-VB is 190mΩ at VGS=10V, providing stable conduction performance and effective power management. Its maximum continuous drain current (ID) is 20A, suitable for handling medium current loads. Using SJ_Multi-EPI technology, this MOSFET combines the advantages of the polysilicon layer, provides good switching performance and current handling capabilities, and is very suitable for high-voltage, high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: FK25SM-6-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: FK25SM-6-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
1. **High Voltage Switching**: The 600V withstand voltage of the FK25SM-6-VB makes it ideal for high voltage switching applications such as power switches, inverters, and power regulators. In these applications, the high voltage handling capability of the MOSFET ensures stable switching performance and reliability.
2. **Power Converters**: In power converter applications such as AC-DC adapters and high power DC-DC converters, the FK25SM-6-VB is able to handle higher voltages and currents, providing efficient power conversion. The low on-resistance of the MOSFET helps reduce energy losses and improve conversion efficiency.
3. **Power Amplifier**: The FK25SM-6-VB is also suitable for power amplifiers, especially in applications where high voltages and medium currents are required. The high voltage withstand capability and good switching performance of the MOSFET enable it to effectively control and amplify signals.
4. **Motor drive**: Although mainly used in high voltage applications, FK25SM-6-VB can also be used for motor drive, especially in motor systems that require high voltage control. Its stable current handling capability and low conduction loss ensure efficient motor control.
In general, FK25SM-6-VB is a high voltage, stable power MOSFET that is widely used in high voltage switches, power converters, power amplifiers and motor drives. Its excellent conductivity and reliability make it an ideal choice for high voltage and medium current applications.
1. **High Voltage Switching**: The 600V withstand voltage of the FK25SM-6-VB makes it ideal for high voltage switching applications such as power switches, inverters, and power regulators. In these applications, the high voltage handling capability of the MOSFET ensures stable switching performance and reliability.
2. **Power Converters**: In power converter applications such as AC-DC adapters and high power DC-DC converters, the FK25SM-6-VB is able to handle higher voltages and currents, providing efficient power conversion. The low on-resistance of the MOSFET helps reduce energy losses and improve conversion efficiency.
3. **Power Amplifier**: The FK25SM-6-VB is also suitable for power amplifiers, especially in applications where high voltages and medium currents are required. The high voltage withstand capability and good switching performance of the MOSFET enable it to effectively control and amplify signals.
4. **Motor drive**: Although mainly used in high voltage applications, FK25SM-6-VB can also be used for motor drive, especially in motor systems that require high voltage control. Its stable current handling capability and low conduction loss ensure efficient motor control.
In general, FK25SM-6-VB is a high voltage, stable power MOSFET that is widely used in high voltage switches, power converters, power amplifiers and motor drives. Its excellent conductivity and reliability make it an ideal choice for high voltage and medium current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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