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FK20SM-10-VB Product details
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Product Introduction
FK20SM-10-VB is a high voltage single N-channel MOSFET designed with TO3P package, optimized for applications requiring high voltage and high current. It has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and adopts SJ_Multi-EPI technology, providing good conduction performance and reliability. The gate threshold voltage (Vth) of the MOSFET is 3.5V, ensuring a lower switching voltage, and at VGS=10V, the on-resistance is 280mΩ, which is suitable for high current and high voltage switching applications. FK20SM-10-VB is suitable for a variety of applications such as power management, motor control, and high voltage switching.
FK20SM-10-VB is a high voltage single N-channel MOSFET designed with TO3P package, optimized for applications requiring high voltage and high current. It has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and adopts SJ_Multi-EPI technology, providing good conduction performance and reliability. The gate threshold voltage (Vth) of the MOSFET is 3.5V, ensuring a lower switching voltage, and at VGS=10V, the on-resistance is 280mΩ, which is suitable for high current and high voltage switching applications. FK20SM-10-VB is suitable for a variety of applications such as power management, motor control, and high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Parameter Description
1. **Package Type**: TO3P
The TO3P package provides good heat dissipation and strong mechanical strength, suitable for applications handling high power and high current.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration makes the MOSFET suitable for high-voltage switching and power amplifier applications, and can effectively control the flow of current.
3. **Drain-Source Voltage (VDS)**: 600V
The 600V drain-source voltage is suitable for high-voltage power supplies and switching applications, and can handle high-voltage loads to ensure system stability.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range allows the MOSFET to operate under different control voltage conditions, increasing design flexibility.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving the efficiency and response speed of the switch.
6. **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
At a gate voltage of 10V, the 280mΩ on-resistance provides low conduction losses, helping to improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 15A
The maximum drain current of 15A makes the MOSFET suitable for handling higher current loads and is suitable for applications that require high current handling capabilities.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent conductive properties and thermal stability, suitable for high voltage and high power switching applications.
1. **Package Type**: TO3P
The TO3P package provides good heat dissipation and strong mechanical strength, suitable for applications handling high power and high current.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration makes the MOSFET suitable for high-voltage switching and power amplifier applications, and can effectively control the flow of current.
3. **Drain-Source Voltage (VDS)**: 600V
The 600V drain-source voltage is suitable for high-voltage power supplies and switching applications, and can handle high-voltage loads to ensure system stability.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range allows the MOSFET to operate under different control voltage conditions, increasing design flexibility.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving the efficiency and response speed of the switch.
6. **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
At a gate voltage of 10V, the 280mΩ on-resistance provides low conduction losses, helping to improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 15A
The maximum drain current of 15A makes the MOSFET suitable for handling higher current loads and is suitable for applications that require high current handling capabilities.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent conductive properties and thermal stability, suitable for high voltage and high power switching applications.
Domain and module applications：
Applicable fields and modules
FK20SM-10-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power converter**
In high-voltage power converters, FK20SM-10-VB can handle 600V high voltage as the main switching element, providing efficient voltage conversion and stable power output, suitable for AC-DC and DC-DC converters.
2. **Motor drive system**
FK20SM-10-VB is suitable for motor drive systems in industrial and consumer electronics. Its high current handling capability and low on-resistance ensure stable operation of the motor in a high-voltage environment, suitable for power tools, electric vehicles and industrial automation equipment.
3. **High-voltage switching circuit**
In high-voltage switching circuits, FK20SM-10-VB can effectively control the flow of current, suitable for power protection, load switching and power conditioning modules, capable of handling high-voltage loads and improving system reliability.
4. **Power Management System**
This MOSFET can provide efficient switching performance in power management systems, such as server power supplies and communication equipment power supplies, helping to improve the efficiency and stability of the power system.
5. **Battery Management System**
FK20SM-10-VB is suitable for high-voltage battery management systems, such as electric vehicles and energy storage systems. Its high voltage tolerance and low on-resistance characteristics can ensure the safety and high efficiency of the battery system.
With its high voltage and high current handling capabilities, low on-resistance and excellent technical characteristics, FK20SM-10-VB provides reliable solutions in application fields such as high-voltage power supplies, motor drives, high-voltage switches, power management and battery management.
FK20SM-10-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power converter**
In high-voltage power converters, FK20SM-10-VB can handle 600V high voltage as the main switching element, providing efficient voltage conversion and stable power output, suitable for AC-DC and DC-DC converters.
2. **Motor drive system**
FK20SM-10-VB is suitable for motor drive systems in industrial and consumer electronics. Its high current handling capability and low on-resistance ensure stable operation of the motor in a high-voltage environment, suitable for power tools, electric vehicles and industrial automation equipment.
3. **High-voltage switching circuit**
In high-voltage switching circuits, FK20SM-10-VB can effectively control the flow of current, suitable for power protection, load switching and power conditioning modules, capable of handling high-voltage loads and improving system reliability.
4. **Power Management System**
This MOSFET can provide efficient switching performance in power management systems, such as server power supplies and communication equipment power supplies, helping to improve the efficiency and stability of the power system.
5. **Battery Management System**
FK20SM-10-VB is suitable for high-voltage battery management systems, such as electric vehicles and energy storage systems. Its high voltage tolerance and low on-resistance characteristics can ensure the safety and high efficiency of the battery system.
With its high voltage and high current handling capabilities, low on-resistance and excellent technical characteristics, FK20SM-10-VB provides reliable solutions in application fields such as high-voltage power supplies, motor drives, high-voltage switches, power management and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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