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FIZ34E-VB Product details
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1. FIZ34E-VB MOSFET Product Introduction
FIZ34E-VB is a high-performance N-channel MOSFET in a TO-220F package, suitable for high-current applications operating at medium and low voltages. The device has a drain-source withstand voltage of 60V and a gate-source voltage of ±20V, enabling it to operate stably under a variety of voltage conditions. Its turn-on voltage is 1.7V, and its on-resistance is 27mΩ at VGS=10V, capable of supporting a drain current of up to 45A. Based on Trench technology, this MOSFET improves switching speed and efficiency while reducing on-resistance, making it ideal for power management and switching applications that require efficient current control and low power consumption.
FIZ34E-VB is a high-performance N-channel MOSFET in a TO-220F package, suitable for high-current applications operating at medium and low voltages. The device has a drain-source withstand voltage of 60V and a gate-source voltage of ±20V, enabling it to operate stably under a variety of voltage conditions. Its turn-on voltage is 1.7V, and its on-resistance is 27mΩ at VGS=10V, capable of supporting a drain current of up to 45A. Based on Trench technology, this MOSFET improves switching speed and efficiency while reducing on-resistance, making it ideal for power management and switching applications that require efficient current control and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FIZ34E-VB MOSFET Detailed parameter description
1. **Package type**: TO-220F
- The TO-220F package provides good heat dissipation and strong current handling capability, suitable for medium power applications.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for efficient switching and current control, and can handle high current transmission.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium and low voltage application scenarios and provides sufficient voltage margin.
4. **Gate-source voltage (VGS)**: ±20V
- The gate voltage range is ±20V, supporting a variety of drive voltages to ensure stable operation.
5. **Throw-On Voltage(Vth)**: 1.7V
- The lower turn-on voltage enables fast turn-on at lower gate drive voltage.
6. **On-Resistance(RDS(ON))**:
- **27mΩ @ VGS=10V**
- Low on-resistance provides low power consumption and efficient current control, suitable for efficient power management applications.
7. **Drain Current(ID)**: 45A
- Maximum drain current is 45A, suitable for handling high current applications and supporting high power loads.
8. **Technology Type**: Trench Technology
- Trench technology provides lower on-resistance and faster switching speed, suitable for efficient switching and power management.
1. **Package type**: TO-220F
- The TO-220F package provides good heat dissipation and strong current handling capability, suitable for medium power applications.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for efficient switching and current control, and can handle high current transmission.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium and low voltage application scenarios and provides sufficient voltage margin.
4. **Gate-source voltage (VGS)**: ±20V
- The gate voltage range is ±20V, supporting a variety of drive voltages to ensure stable operation.
5. **Throw-On Voltage(Vth)**: 1.7V
- The lower turn-on voltage enables fast turn-on at lower gate drive voltage.
6. **On-Resistance(RDS(ON))**:
- **27mΩ @ VGS=10V**
- Low on-resistance provides low power consumption and efficient current control, suitable for efficient power management applications.
7. **Drain Current(ID)**: 45A
- Maximum drain current is 45A, suitable for handling high current applications and supporting high power loads.
8. **Technology Type**: Trench Technology
- Trench technology provides lower on-resistance and faster switching speed, suitable for efficient switching and power management.
Domain and module applications：
III. FIZ34E-VB Application Fields and Module Examples
1. **Power Tool Power Supply**:
- FIZ34E-VB is ideal for power tool power management, especially in scenarios where low voltage and high current are required. Its high current handling capability and low on-resistance enable it to efficiently control the power supply of power tools, improving tool efficiency and battery life.
2. **Motor Drive**:
- This MOSFET is suitable for motor drive applications, especially the control of DC motors and stepper motors. FIZ34E-VB is able to provide high current support under low voltage conditions, ensuring stable operation of the motor under various loads.
3. **High Efficiency DC-DC Converter**:
- In DC-DC converters, FIZ34E-VB is an ideal choice, especially for synchronous rectification and buck conversion applications. Its low on-resistance and high current capability help improve conversion efficiency and reduce power losses.
4. **Automotive Electronics**:
- This MOSFET can be applied to automotive electronic systems such as power distribution modules and lighting controls. Its high current capability and efficient switching characteristics enable it to operate stably in harsh automotive environments.
5. **LED Driver Circuits**:
- FIZ34E-VB excels in LED driver circuits, especially in high-power LED applications that require stable current control. Its low on-resistance helps improve system efficiency and reduce heat generation.
Through these application examples, FIZ34E-VB demonstrates its superior performance in low- to medium-voltage, high-current applications, making it an ideal choice for power management, switching circuits, and motor drives.
1. **Power Tool Power Supply**:
- FIZ34E-VB is ideal for power tool power management, especially in scenarios where low voltage and high current are required. Its high current handling capability and low on-resistance enable it to efficiently control the power supply of power tools, improving tool efficiency and battery life.
2. **Motor Drive**:
- This MOSFET is suitable for motor drive applications, especially the control of DC motors and stepper motors. FIZ34E-VB is able to provide high current support under low voltage conditions, ensuring stable operation of the motor under various loads.
3. **High Efficiency DC-DC Converter**:
- In DC-DC converters, FIZ34E-VB is an ideal choice, especially for synchronous rectification and buck conversion applications. Its low on-resistance and high current capability help improve conversion efficiency and reduce power losses.
4. **Automotive Electronics**:
- This MOSFET can be applied to automotive electronic systems such as power distribution modules and lighting controls. Its high current capability and efficient switching characteristics enable it to operate stably in harsh automotive environments.
5. **LED Driver Circuits**:
- FIZ34E-VB excels in LED driver circuits, especially in high-power LED applications that require stable current control. Its low on-resistance helps improve system efficiency and reduce heat generation.
Through these application examples, FIZ34E-VB demonstrates its superior performance in low- to medium-voltage, high-current applications, making it an ideal choice for power management, switching circuits, and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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