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FIR8N60FG-VB Product details
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Product Introduction
FIR8N60FG-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for medium and high voltage switching and power management applications. The MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, making it suitable for power supplies and load control that require high voltage handling capabilities. The MOSFET uses planar process technology, which provides good conduction performance and thermal stability. Its on-resistance is 830mΩ at a gate voltage of 10V, ensuring low conduction losses and high efficiency.
FIR8N60FG-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for medium and high voltage switching and power management applications. The MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, making it suitable for power supplies and load control that require high voltage handling capabilities. The MOSFET uses planar process technology, which provides good conduction performance and thermal stability. Its on-resistance is 830mΩ at a gate voltage of 10V, ensuring low conduction losses and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter Description
1. **Package Type**: TO220F
TO220F package provides excellent heat dissipation and strong mechanical strength, suitable for high power and high current application environments.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration enables MOSFET to be used as a high-voltage switching element, suitable for controlling inductive or capacitive loads.
3. **Drain-Source Voltage (VDS)**: 650V
The 650V drain-source voltage is suitable for medium and high voltage power supply and switching applications, can handle high voltage loads, and is suitable for power modules and switching circuits that require high voltage tolerance.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures the stability of MOSFET in high voltage environments and adapts to various electrical conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, which improves the flexibility of circuit design.
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
At a gate voltage of 10V, the 830mΩ on-resistance provides low conduction loss characteristics, which helps to improve switching efficiency and power transmission efficiency.
7. **Maximum Drain Current (ID)**: 10A
The maximum drain current is 10A, which is suitable for applications that handle medium currents and can ensure stable current handling capabilities.
8. **Technology Type**: Planar
Planar process technology provides good manufacturing consistency and reliability, and is suitable for various high-voltage switching and power management applications.
1. **Package Type**: TO220F
TO220F package provides excellent heat dissipation and strong mechanical strength, suitable for high power and high current application environments.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration enables MOSFET to be used as a high-voltage switching element, suitable for controlling inductive or capacitive loads.
3. **Drain-Source Voltage (VDS)**: 650V
The 650V drain-source voltage is suitable for medium and high voltage power supply and switching applications, can handle high voltage loads, and is suitable for power modules and switching circuits that require high voltage tolerance.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures the stability of MOSFET in high voltage environments and adapts to various electrical conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, which improves the flexibility of circuit design.
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
At a gate voltage of 10V, the 830mΩ on-resistance provides low conduction loss characteristics, which helps to improve switching efficiency and power transmission efficiency.
7. **Maximum Drain Current (ID)**: 10A
The maximum drain current is 10A, which is suitable for applications that handle medium currents and can ensure stable current handling capabilities.
8. **Technology Type**: Planar
Planar process technology provides good manufacturing consistency and reliability, and is suitable for various high-voltage switching and power management applications.
Domain and module applications：
Applicable fields and modules
FIR8N60FG-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power converter**
FIR8N60FG-VB performs well in AC-DC and DC-DC converters. Its 650V drain-source voltage and low on-resistance enable it to effectively handle high-voltage power supplies, improve conversion efficiency and reduce energy loss.
2. **Motor drive system**
In industrial motor drive systems, such as inverters and power tools, FIR8N60FG-VB is able to control current as a switching element, providing efficient motor drive performance, especially in medium and high voltage environments.
3. **High-voltage lighting control**
Suitable for switching control of high-voltage LED lighting systems. MOSFET is able to handle high-voltage power supplies, ensure the stability and efficiency of LED systems, and improve the performance and life of lighting systems.
4. **Battery Management System**
In high-voltage battery management systems, the FIR8N60FG-VB can be used for switching and protection circuits of battery packs. Its high voltage withstand capability and low on-resistance characteristics help ensure the safety and high efficiency of battery systems.
5. **High-voltage Switching Circuit**
Suitable for use in various high-voltage switching circuits such as power electronic equipment and power protection systems. MOSFET can effectively handle high-voltage switching operations and provide efficient control and protection functions.
With its high drain-source voltage and low on-resistance characteristics, the FIR8N60FG-VB MOSFET provides a reliable solution in multiple application areas such as power conversion, motor drive, high-voltage lighting and battery management.
FIR8N60FG-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power converter**
FIR8N60FG-VB performs well in AC-DC and DC-DC converters. Its 650V drain-source voltage and low on-resistance enable it to effectively handle high-voltage power supplies, improve conversion efficiency and reduce energy loss.
2. **Motor drive system**
In industrial motor drive systems, such as inverters and power tools, FIR8N60FG-VB is able to control current as a switching element, providing efficient motor drive performance, especially in medium and high voltage environments.
3. **High-voltage lighting control**
Suitable for switching control of high-voltage LED lighting systems. MOSFET is able to handle high-voltage power supplies, ensure the stability and efficiency of LED systems, and improve the performance and life of lighting systems.
4. **Battery Management System**
In high-voltage battery management systems, the FIR8N60FG-VB can be used for switching and protection circuits of battery packs. Its high voltage withstand capability and low on-resistance characteristics help ensure the safety and high efficiency of battery systems.
5. **High-voltage Switching Circuit**
Suitable for use in various high-voltage switching circuits such as power electronic equipment and power protection systems. MOSFET can effectively handle high-voltage switching operations and provide efficient control and protection functions.
With its high drain-source voltage and low on-resistance characteristics, the FIR8N60FG-VB MOSFET provides a reliable solution in multiple application areas such as power conversion, motor drive, high-voltage lighting and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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