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FIR75N06LG-VB Product details
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1. FIR75N06LG-VB MOSFET Product Introduction
FIR75N06LG-VB is a high-performance N-channel MOSFET in TO-252 package. Designed for low-voltage, high-current applications, this MOSFET has a drain-source withstand voltage of 60V, making it suitable for switching and power management circuits that require high current handling capabilities. Its gate-source voltage range is ±20V, and its turn-on voltage is 3V, allowing it to stably conduct at a lower gate voltage. The on-resistance is 4.5mΩ at VGS=10V, 12mΩ at VGS=4.5V, and the maximum drain current is 97A. Based on Trench technology, this MOSFET provides superior switching performance and low conduction losses, making it an ideal choice for efficient power management and switching applications.
FIR75N06LG-VB is a high-performance N-channel MOSFET in TO-252 package. Designed for low-voltage, high-current applications, this MOSFET has a drain-source withstand voltage of 60V, making it suitable for switching and power management circuits that require high current handling capabilities. Its gate-source voltage range is ±20V, and its turn-on voltage is 3V, allowing it to stably conduct at a lower gate voltage. The on-resistance is 4.5mΩ at VGS=10V, 12mΩ at VGS=4.5V, and the maximum drain current is 97A. Based on Trench technology, this MOSFET provides superior switching performance and low conduction losses, making it an ideal choice for efficient power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FIR75N06LG-VB MOSFET Detailed parameter description
1. **Package type**: TO-252
- The TO-252 package provides good heat dissipation and compact size, suitable for applications requiring high current and high power density.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for efficient switching and power control, capable of handling large current flows.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for low to medium voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- A gate voltage range of ±20V is provided, allowing stable operation under a variety of control voltages.
5. **Throw-On Voltage(Vth)**: 3V
- The turn-on voltage is 3V, ensuring stable conduction at a lower gate voltage.
6. **On-Resistance(RDS(ON))**:
- **12mΩ @ VGS=4.5V**
- **4.5mΩ @ VGS=10V**
- Low on-resistance provides low switching loss and efficient current conduction.
7. **Drain Current(ID)**: 97A
- Maximum drain current is 97A, suitable for high current applications.
8. **Technology Type**: Trench Technology
- Trench technology improves switching speed and low on-resistance, suitable for efficient power management and switching applications.
1. **Package type**: TO-252
- The TO-252 package provides good heat dissipation and compact size, suitable for applications requiring high current and high power density.
2. **Channel configuration**: Single N-channel
- Single N-channel MOSFET is suitable for efficient switching and power control, capable of handling large current flows.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for low to medium voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- A gate voltage range of ±20V is provided, allowing stable operation under a variety of control voltages.
5. **Throw-On Voltage(Vth)**: 3V
- The turn-on voltage is 3V, ensuring stable conduction at a lower gate voltage.
6. **On-Resistance(RDS(ON))**:
- **12mΩ @ VGS=4.5V**
- **4.5mΩ @ VGS=10V**
- Low on-resistance provides low switching loss and efficient current conduction.
7. **Drain Current(ID)**: 97A
- Maximum drain current is 97A, suitable for high current applications.
8. **Technology Type**: Trench Technology
- Trench technology improves switching speed and low on-resistance, suitable for efficient power management and switching applications.
Domain and module applications：
III. FIR75N06LG-VB Application Fields and Module Examples
1. **High-efficiency DC-DC Converter**:
- FIR75N06LG-VB excels in high-efficiency DC-DC converters, especially for buck converters and synchronous rectification applications. Its low on-resistance and high current capability make it suitable for handling high power requirements.
2. **Power Management System**:
- This MOSFET is suitable for various applications in power management systems, such as battery management and power distribution modules. Its high current handling capability and low on-resistance ensure efficient operation of the system.
3. **Motor Driver**:
- In motor drive applications, FIR75N06LG-VB is able to handle high currents and is suitable for control systems for DC motors and stepper motors, providing efficient current switching and control.
4. **LED drive circuit**:
- This MOSFET is also suitable for use in high-power LED drive circuits, and can stably control the LED current under high current and low voltage environments, improving system efficiency and reliability.
5. **Switching power supply**:
- In a switching power supply (SMPS), FIR75N06LG-VB provides low on-resistance and high current capability, suitable for power switching and rectification applications, improving overall efficiency.
Through these application examples, FIR75N06LG-VB shows its superior performance in low voltage, high current applications, and is an ideal choice for efficient power management and switching circuits.
1. **High-efficiency DC-DC Converter**:
- FIR75N06LG-VB excels in high-efficiency DC-DC converters, especially for buck converters and synchronous rectification applications. Its low on-resistance and high current capability make it suitable for handling high power requirements.
2. **Power Management System**:
- This MOSFET is suitable for various applications in power management systems, such as battery management and power distribution modules. Its high current handling capability and low on-resistance ensure efficient operation of the system.
3. **Motor Driver**:
- In motor drive applications, FIR75N06LG-VB is able to handle high currents and is suitable for control systems for DC motors and stepper motors, providing efficient current switching and control.
4. **LED drive circuit**:
- This MOSFET is also suitable for use in high-power LED drive circuits, and can stably control the LED current under high current and low voltage environments, improving system efficiency and reliability.
5. **Switching power supply**:
- In a switching power supply (SMPS), FIR75N06LG-VB provides low on-resistance and high current capability, suitable for power switching and rectification applications, improving overall efficiency.
Through these application examples, FIR75N06LG-VB shows its superior performance in low voltage, high current applications, and is an ideal choice for efficient power management and switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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