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FIR5N50LG-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FIR5N50LG-VB is a high voltage single N-channel MOSFET in TO252 package, designed for applications requiring high voltage resistance and medium current handling. Its maximum drain-source voltage (VDS) is 650V and its on-resistance is 1000mΩ @ VGS=10V. This MOSFET adopts SJ_Multi-EPI technology, which provides excellent switching performance and low on-resistance, giving it good stability and efficiency in high voltage environments. FIR5N50LG-VB is suitable for a variety of high voltage power management and control applications.
FIR5N50LG-VB is a high voltage single N-channel MOSFET in TO252 package, designed for applications requiring high voltage resistance and medium current handling. Its maximum drain-source voltage (VDS) is 650V and its on-resistance is 1000mΩ @ VGS=10V. This MOSFET adopts SJ_Multi-EPI technology, which provides excellent switching performance and low on-resistance, giving it good stability and efficiency in high voltage environments. FIR5N50LG-VB is suitable for a variety of high voltage power management and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
- **Model**: FIR5N50LG-VB
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 30W
- **Model**: FIR5N50LG-VB
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 30W
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power management**: FIR5N50LG-VB plays an important role in high-voltage power management, especially for switch control of power converters and high-voltage power supplies. Its high withstand voltage and moderate on-resistance ensure reliability and efficiency in high-voltage environments, helping to reduce energy losses.
2. **Industrial motor drive**: In industrial motor drive modules, this MOSFET can be used for switch control of high-voltage motors. Its high current handling capability and stable performance enable it to effectively control the operation of the motor and improve the overall performance of the drive system.
3. **LED driver**: FIR5N50LG-VB can be used in high-power LED drivers as a switch control device. Its high withstand voltage characteristics ensure stability under high voltage conditions, while its moderate on-resistance helps improve drive efficiency.
4. **Battery management system (BMS)**: In battery management systems, FIR5N50LG-VB can be used as a battery protection and switch control device. Its high voltage withstand capability ensures that the system can effectively protect the battery during the charging and discharging process, providing a stable battery management solution.
Through these application examples, the FIR5N50LG-VB MOSFET demonstrates its advantages in high-voltage power management, motor drive and other high-power applications. Its high voltage handling capability and reliable performance make it a key power switching component in these fields.
1. **High-voltage power management**: FIR5N50LG-VB plays an important role in high-voltage power management, especially for switch control of power converters and high-voltage power supplies. Its high withstand voltage and moderate on-resistance ensure reliability and efficiency in high-voltage environments, helping to reduce energy losses.
2. **Industrial motor drive**: In industrial motor drive modules, this MOSFET can be used for switch control of high-voltage motors. Its high current handling capability and stable performance enable it to effectively control the operation of the motor and improve the overall performance of the drive system.
3. **LED driver**: FIR5N50LG-VB can be used in high-power LED drivers as a switch control device. Its high withstand voltage characteristics ensure stability under high voltage conditions, while its moderate on-resistance helps improve drive efficiency.
4. **Battery management system (BMS)**: In battery management systems, FIR5N50LG-VB can be used as a battery protection and switch control device. Its high voltage withstand capability ensures that the system can effectively protect the battery during the charging and discharging process, providing a stable battery management solution.
Through these application examples, the FIR5N50LG-VB MOSFET demonstrates its advantages in high-voltage power management, motor drive and other high-power applications. Its high voltage handling capability and reliable performance make it a key power switching component in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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