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FIR4N60FG-VB Product details
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Product Introduction
**FIR4N60FG-VB** is a single N-channel power MOSFET packaged in TO220F. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage (VDS) of 650V, making it suitable for operation in high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient control voltage range. The threshold voltage (Vth) is 3.5V, ensuring effective switching at a reasonable drive voltage. The on-resistance (RDS(ON)) of FIR4N60FG-VB is 2560mΩ@VGS=10V, which is relatively high and suitable for low power applications. Its maximum continuous drain current (ID) is 4A, suitable for applications handling medium to low power. The device uses planar process (Plannar) technology and is suitable for a variety of high voltage switching and control applications.
**FIR4N60FG-VB** is a single N-channel power MOSFET packaged in TO220F. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage (VDS) of 650V, making it suitable for operation in high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient control voltage range. The threshold voltage (Vth) is 3.5V, ensuring effective switching at a reasonable drive voltage. The on-resistance (RDS(ON)) of FIR4N60FG-VB is 2560mΩ@VGS=10V, which is relatively high and suitable for low power applications. Its maximum continuous drain current (ID) is 4A, suitable for applications handling medium to low power. The device uses planar process (Plannar) technology and is suitable for a variety of high voltage switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FIR4N60FG-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 4A
- **Technology**: Plannar
- **Model**: FIR4N60FG-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Applications and Modules
1. **High-voltage power switching**: The high drain-source withstand voltage (650V) of the FIR4N60FG-VB makes it ideal for high-voltage power switching applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Although its on-resistance is relatively high, it can reliably switch high voltages in low-power applications.
2. **Small motor drive**: In motor drive circuits, the 4A current capability of the FIR4N60FG-VB makes it suitable for the control of small DC motors or stepper motors. These applications require the MOSFET to withstand a certain current load and provide stable switching performance at high voltages.
3. **Power converter**: In power converters such as DC-DC converters and power adapters, although the FIR4N60FG-VB has a relatively high on-resistance, its high voltage withstand capability and medium current capability make it suitable for these applications that require stable switching and voltage conversion.
4. **High-voltage control circuit**: FIR4N60FG-VB can be used in high-voltage control circuits, such as high-voltage power management systems and power regulators. These circuits require MOSFETs to operate stably under high voltage conditions and provide effective switching control.
In general, FIR4N60FG-VB is mainly suitable for high-voltage, low-power electronic applications, especially in scenarios that require high-voltage switching and current handling.
1. **High-voltage power switching**: The high drain-source withstand voltage (650V) of the FIR4N60FG-VB makes it ideal for high-voltage power switching applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Although its on-resistance is relatively high, it can reliably switch high voltages in low-power applications.
2. **Small motor drive**: In motor drive circuits, the 4A current capability of the FIR4N60FG-VB makes it suitable for the control of small DC motors or stepper motors. These applications require the MOSFET to withstand a certain current load and provide stable switching performance at high voltages.
3. **Power converter**: In power converters such as DC-DC converters and power adapters, although the FIR4N60FG-VB has a relatively high on-resistance, its high voltage withstand capability and medium current capability make it suitable for these applications that require stable switching and voltage conversion.
4. **High-voltage control circuit**: FIR4N60FG-VB can be used in high-voltage control circuits, such as high-voltage power management systems and power regulators. These circuits require MOSFETs to operate stably under high voltage conditions and provide effective switching control.
In general, FIR4N60FG-VB is mainly suitable for high-voltage, low-power electronic applications, especially in scenarios that require high-voltage switching and current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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