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FIR3N80LG-VB Product details
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Product Introduction
FIR3N80LG-VB is a single N-channel MOSFET in TO252 package with a high drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, which can cope with high voltage applications. This MOSFET adopts advanced SJ_Multi-EPI technology, which enables it to have good electrical performance and reliability under high voltage. Although its on-resistance is relatively high, it has certain advantages in low current applications and is suitable for high voltage and low current switch control occasions.
FIR3N80LG-VB is a single N-channel MOSFET in TO252 package with a high drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, which can cope with high voltage applications. This MOSFET adopts advanced SJ_Multi-EPI technology, which enables it to have good electrical performance and reliability under high voltage. Although its on-resistance is relatively high, it has certain advantages in low current applications and is suitable for high voltage and low current switch control occasions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
1. **Package Type**: TO252
TO252 package is a compact package that provides good heat dissipation performance and is suitable for space-constrained applications.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration allows MOSFET to be used as a switching element, especially suitable for high-voltage and low-current switching applications.
3. **Drain-Source Voltage (VDS)**: 800V
The 800V drain-source voltage makes FIR3N80LG-VB suitable for various high-voltage power supply and switching applications, and can handle high-voltage power loads.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures the reliable operation of MOSFET in high-voltage environments and adapts to complex electrical conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage allows the MOSFET to turn on only at a higher gate voltage, helping to prevent false operation.
6. **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
At a gate voltage of 10V, the 2600mΩ on-resistance is suitable for low current applications and can effectively limit conduction losses.
7. **Maximum Drain Current (ID)**: 2A
The maximum drain current is 2A, which is suitable for low current applications and can ensure stability under low power consumption conditions.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI (Super Junction Multi-Epi) technology provides good high voltage capability and efficiency, suitable for applications requiring high voltage switching.
1. **Package Type**: TO252
TO252 package is a compact package that provides good heat dissipation performance and is suitable for space-constrained applications.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration allows MOSFET to be used as a switching element, especially suitable for high-voltage and low-current switching applications.
3. **Drain-Source Voltage (VDS)**: 800V
The 800V drain-source voltage makes FIR3N80LG-VB suitable for various high-voltage power supply and switching applications, and can handle high-voltage power loads.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range ensures the reliable operation of MOSFET in high-voltage environments and adapts to complex electrical conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage allows the MOSFET to turn on only at a higher gate voltage, helping to prevent false operation.
6. **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
At a gate voltage of 10V, the 2600mΩ on-resistance is suitable for low current applications and can effectively limit conduction losses.
7. **Maximum Drain Current (ID)**: 2A
The maximum drain current is 2A, which is suitable for low current applications and can ensure stability under low power consumption conditions.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI (Super Junction Multi-Epi) technology provides good high voltage capability and efficiency, suitable for applications requiring high voltage switching.
Domain and module applications：
Applicable fields and modules
FIR3N80LG-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power switch**
This MOSFET can be used in high-voltage switching applications in AC-DC converters and DC-DC converters. Its high drain-source voltage of 800V makes it ideal for handling high-voltage power supplies, especially in environments that require high-voltage withstand capabilities, such as industrial power supply equipment and high-voltage power supply modules.
2. **High-voltage lighting system**
FIR3N80LG-VB can be used in the driver circuit in high-voltage LED lighting systems. Due to its ability to handle high voltages, the MOSFET can effectively control the switching operation of high-voltage LEDs and provide stable lighting control.
3. **Smart meters and high-voltage metering equipment**
This MOSFET is suitable for use in smart meters and other high-voltage metering equipment. It can act as a switching element in these devices to help control and manage power transmission, ensuring the accuracy and safety of the equipment.
4. **Battery Management System**
In low-current battery systems that require high-voltage protection and management, the FIR3N80LG-VB can be used as a protection and switching element to provide reliable current control and high-voltage protection.
5. **High-voltage Industrial Equipment Control**
Suitable for a variety of high-voltage industrial control equipment, such as motor drives and industrial switch controllers. In these applications, the MOSFET can be used to process high-voltage control signals to ensure the stability and safety of the equipment.
Through its high-voltage capability and low-current characteristics, the FIR3N80LG-VB MOSFET provides an effective solution in areas such as high-voltage power supplies, high-voltage lighting, and smart metering.
FIR3N80LG-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power switch**
This MOSFET can be used in high-voltage switching applications in AC-DC converters and DC-DC converters. Its high drain-source voltage of 800V makes it ideal for handling high-voltage power supplies, especially in environments that require high-voltage withstand capabilities, such as industrial power supply equipment and high-voltage power supply modules.
2. **High-voltage lighting system**
FIR3N80LG-VB can be used in the driver circuit in high-voltage LED lighting systems. Due to its ability to handle high voltages, the MOSFET can effectively control the switching operation of high-voltage LEDs and provide stable lighting control.
3. **Smart meters and high-voltage metering equipment**
This MOSFET is suitable for use in smart meters and other high-voltage metering equipment. It can act as a switching element in these devices to help control and manage power transmission, ensuring the accuracy and safety of the equipment.
4. **Battery Management System**
In low-current battery systems that require high-voltage protection and management, the FIR3N80LG-VB can be used as a protection and switching element to provide reliable current control and high-voltage protection.
5. **High-voltage Industrial Equipment Control**
Suitable for a variety of high-voltage industrial control equipment, such as motor drives and industrial switch controllers. In these applications, the MOSFET can be used to process high-voltage control signals to ensure the stability and safety of the equipment.
Through its high-voltage capability and low-current characteristics, the FIR3N80LG-VB MOSFET provides an effective solution in areas such as high-voltage power supplies, high-voltage lighting, and smart metering.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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