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FIR2N60BPG-VB Product details
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1. FIR2N60BPG-VB MOSFET Product Introduction
FIR2N60BPG-VB is a high-voltage N-channel MOSFET in TO-251 package. Designed to handle high voltage and low current applications, the device has a high withstand voltage of 650V, making it particularly suitable for high-voltage power supplies and switching devices. Its gate-source voltage is ±30V and its turn-on voltage is 3.5V, ensuring stable operation under high voltage conditions. With an on-resistance of 4300mΩ@VGS=10V and a drain current of 2A, it is suitable for applications that require high voltage but low current requirements. Based on planar technology, this MOSFET provides reliable performance and long life in high-voltage applications.
FIR2N60BPG-VB is a high-voltage N-channel MOSFET in TO-251 package. Designed to handle high voltage and low current applications, the device has a high withstand voltage of 650V, making it particularly suitable for high-voltage power supplies and switching devices. Its gate-source voltage is ±30V and its turn-on voltage is 3.5V, ensuring stable operation under high voltage conditions. With an on-resistance of 4300mΩ@VGS=10V and a drain current of 2A, it is suitable for applications that require high voltage but low current requirements. Based on planar technology, this MOSFET provides reliable performance and long life in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FIR2N60BPG-VB MOSFET Detailed parameter description
1. **Package type**: TO-251
- The TO-251 package is compact and lightweight, suitable for space-constrained applications, and provides effective heat dissipation capabilities.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes it excel in high-voltage switching and power management applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, suitable for high-voltage power supplies, converters and other high-voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- A gate voltage range of ±30V is provided, allowing stable operation under a variety of driving conditions.
5. **Throw Voltage(Vth)**: 3.5V
- The turn-on voltage is 3.5V, ensuring stable conduction within the common control voltage range.
6. **On-resistance(RDS(ON))**: 4300mΩ @ VGS=10V
- The on-resistance is 4300mΩ, suitable for low current applications, ensuring low power consumption and effective current control.
7. **Drain Current(ID)**: 2A
- The maximum drain current is 2A, suitable for low power, high voltage switching applications.
8. **Technology Type**: Planar Technology (Plannar)
- Planar technology provides good stability and reliability, especially in high voltage applications.
1. **Package type**: TO-251
- The TO-251 package is compact and lightweight, suitable for space-constrained applications, and provides effective heat dissipation capabilities.
2. **Channel configuration**: Single N-channel
- The single N-channel configuration makes it excel in high-voltage switching and power management applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, suitable for high-voltage power supplies, converters and other high-voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- A gate voltage range of ±30V is provided, allowing stable operation under a variety of driving conditions.
5. **Throw Voltage(Vth)**: 3.5V
- The turn-on voltage is 3.5V, ensuring stable conduction within the common control voltage range.
6. **On-resistance(RDS(ON))**: 4300mΩ @ VGS=10V
- The on-resistance is 4300mΩ, suitable for low current applications, ensuring low power consumption and effective current control.
7. **Drain Current(ID)**: 2A
- The maximum drain current is 2A, suitable for low power, high voltage switching applications.
8. **Technology Type**: Planar Technology (Plannar)
- Planar technology provides good stability and reliability, especially in high voltage applications.
Domain and module applications：
3. FIR2N60BPG-VB Applications and Module Examples
1. **High Voltage Power Converters**:
- FIR2N60BPG-VB is suitable for high voltage power converters such as AC-DC converters and power adapters. These applications require high withstand voltage and low current handling capabilities, and the 650V withstand voltage and 2A current capability of this MOSFET can meet these requirements.
2. **Switching Power Supply**:
- This MOSFET can be used in small switching power supplies (SMPS), especially those that need to handle high voltages but have low power requirements, such as portable chargers and power modules for small electronic devices.
3. **LED Drive Circuit**:
- FIR2N60BPG-VB is also suitable for use in high voltage LED drive circuits. Its high withstand voltage capability can provide stable voltage control on the power input side, while its low on-state current is suitable for driving low power LED lighting modules.
4. **Industrial Control Systems**:
- In industrial control systems that require high voltage isolation and low current switching, this MOSFET can be used as part of a protection circuit or voltage regulator to ensure system reliability and safety.
5. **Relays and Switchgear**:
- This MOSFET is suitable for use in electronic relays and switchgear, especially those applications that require high voltage handling and low current switching, such as home appliance control and small motor drives.
Through these application examples, the FIR2N60BPG-VB demonstrates its excellent performance in high voltage, low current demand environments, suitable for a variety of power electronics and control systems.
1. **High Voltage Power Converters**:
- FIR2N60BPG-VB is suitable for high voltage power converters such as AC-DC converters and power adapters. These applications require high withstand voltage and low current handling capabilities, and the 650V withstand voltage and 2A current capability of this MOSFET can meet these requirements.
2. **Switching Power Supply**:
- This MOSFET can be used in small switching power supplies (SMPS), especially those that need to handle high voltages but have low power requirements, such as portable chargers and power modules for small electronic devices.
3. **LED Drive Circuit**:
- FIR2N60BPG-VB is also suitable for use in high voltage LED drive circuits. Its high withstand voltage capability can provide stable voltage control on the power input side, while its low on-state current is suitable for driving low power LED lighting modules.
4. **Industrial Control Systems**:
- In industrial control systems that require high voltage isolation and low current switching, this MOSFET can be used as part of a protection circuit or voltage regulator to ensure system reliability and safety.
5. **Relays and Switchgear**:
- This MOSFET is suitable for use in electronic relays and switchgear, especially those applications that require high voltage handling and low current switching, such as home appliance control and small motor drives.
Through these application examples, the FIR2N60BPG-VB demonstrates its excellent performance in high voltage, low current demand environments, suitable for a variety of power electronics and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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