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FIR2N60ABPG-VB Product details
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Product Introduction: FIR2N60ABPG-VB
FIR2N60ABPG-VB is an N-channel power MOSFET designed for high voltage applications and is packaged in TO251. The device has a drain-source voltage (VDS) of up to 650V, making it suitable for applications that require high voltage operation. Although its on-resistance (RDS(ON)) is high, at 4300mΩ at a VGS of 10V, the device can withstand a maximum drain current (ID) of 2A. Its gate voltage (VGS) withstands a voltage of ±30V and a threshold voltage (Vth) of 3.5V. Manufactured using a planar process (Planar), the FIR2N60ABPG-VB provides reliable electrical performance and is suitable for low-power applications that require high voltage tolerance.
FIR2N60ABPG-VB is an N-channel power MOSFET designed for high voltage applications and is packaged in TO251. The device has a drain-source voltage (VDS) of up to 650V, making it suitable for applications that require high voltage operation. Although its on-resistance (RDS(ON)) is high, at 4300mΩ at a VGS of 10V, the device can withstand a maximum drain current (ID) of 2A. Its gate voltage (VGS) withstands a voltage of ±30V and a threshold voltage (Vth) of 3.5V. Manufactured using a planar process (Planar), the FIR2N60ABPG-VB provides reliable electrical performance and is suitable for low-power applications that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
- **Package type (Package): ** TO251
- **Polarity configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 4300mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 2A
- **Technology (Technology): ** Planar process (Planar)
- **Package type (Package): ** TO251
- **Polarity configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 4300mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 2A
- **Technology (Technology): ** Planar process (Planar)
Domain and module applications：
Application fields and module examples:
1. **High-voltage switching circuits:** FIR2N60ABPG-VB is very suitable for high-voltage switching circuits, such as power line protection and circuit breakers. Despite its high on-resistance, its high voltage withstand capability enables it to operate reliably in situations where high voltage control is required.
2. **Low-power power modules:** In low-power, high-voltage power modules, this MOSFET can provide the necessary switching function. For example, in some industrial control circuits and small AC-DC power supplies, FIR2N60ABPG-VB can be used to handle high-voltage power conversion.
3. **Protection circuits and filters:** FIR2N60ABPG-VB is also suitable for use in high-voltage protection circuits and filter circuits. In these applications, the main task of the MOSFET is to provide high-voltage blocking and protection functions. Although its current handling capability is limited, its high-voltage performance can ensure the safety and stability of the system.
1. **High-voltage switching circuits:** FIR2N60ABPG-VB is very suitable for high-voltage switching circuits, such as power line protection and circuit breakers. Despite its high on-resistance, its high voltage withstand capability enables it to operate reliably in situations where high voltage control is required.
2. **Low-power power modules:** In low-power, high-voltage power modules, this MOSFET can provide the necessary switching function. For example, in some industrial control circuits and small AC-DC power supplies, FIR2N60ABPG-VB can be used to handle high-voltage power conversion.
3. **Protection circuits and filters:** FIR2N60ABPG-VB is also suitable for use in high-voltage protection circuits and filter circuits. In these applications, the main task of the MOSFET is to provide high-voltage blocking and protection functions. Although its current handling capability is limited, its high-voltage performance can ensure the safety and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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