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FIR1N60BPG-VB Product details
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Product Introduction
**FIR1N60BPG-VB** is a single N-channel power MOSFET in TO251 package. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage (VDS) of 650V, enabling it to operate reliably in high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient control voltage range. The threshold voltage (Vth) is 3.5V, ensuring that the MOSFET can be turned on at a reasonable drive voltage. The on-resistance (RDS(ON)) of FIR1N60BPG-VB is 4300mΩ@VGS=10V, which is relatively high and suitable for low-power applications. Its maximum continuous drain current (ID) is 2A, which is suitable for low current application scenarios. The device uses planar process (Plannar) technology and is suitable for use in high-voltage, low-power switching and control circuits.
**FIR1N60BPG-VB** is a single N-channel power MOSFET in TO251 package. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage (VDS) of 650V, enabling it to operate reliably in high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, providing sufficient control voltage range. The threshold voltage (Vth) is 3.5V, ensuring that the MOSFET can be turned on at a reasonable drive voltage. The on-resistance (RDS(ON)) of FIR1N60BPG-VB is 4300mΩ@VGS=10V, which is relatively high and suitable for low-power applications. Its maximum continuous drain current (ID) is 2A, which is suitable for low current application scenarios. The device uses planar process (Plannar) technology and is suitable for use in high-voltage, low-power switching and control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FIR1N60BPG-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: Plannar
- **Model**: FIR1N60BPG-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
1. **Low-power high-voltage switching circuit**: The high drain-source withstand voltage (650V) of FIR1N60BPG-VB makes it very suitable for use in low-power high-voltage switching circuits, such as electronic ballasts and low-power switching power supplies. Although its on-resistance is relatively high, it can work effectively in low-power applications.
2. **LED driver**: In LED drivers, this MOSFET can be used to control the switching and current regulation of LEDs. Since LED drivers usually need to operate at high voltages, the 650V withstand voltage of FIR1N60BPG-VB can provide sufficient safety and reliability.
3. **Power control module**: In power control modules that require a stable high-voltage power supply, such as battery management systems (BMS) and auxiliary power supplies, this MOSFET can provide reliable switching control at high voltages. Although its maximum current is only 2A, it performs well in low-current applications.
4. **Small Voltage Converter**: FIR1N60BPG-VB is suitable for small voltage converters, especially in situations where high voltage drop is required. In such applications, the high withstand voltage and relatively high on-resistance of MOSFET do not affect its performance in low-power scenarios.
From the above application examples, it can be seen that FIR1N60BPG-VB is mainly suitable for high-voltage, low-power electronic applications, especially in scenarios that require high-voltage switching, low-power control and reliability.
1. **Low-power high-voltage switching circuit**: The high drain-source withstand voltage (650V) of FIR1N60BPG-VB makes it very suitable for use in low-power high-voltage switching circuits, such as electronic ballasts and low-power switching power supplies. Although its on-resistance is relatively high, it can work effectively in low-power applications.
2. **LED driver**: In LED drivers, this MOSFET can be used to control the switching and current regulation of LEDs. Since LED drivers usually need to operate at high voltages, the 650V withstand voltage of FIR1N60BPG-VB can provide sufficient safety and reliability.
3. **Power control module**: In power control modules that require a stable high-voltage power supply, such as battery management systems (BMS) and auxiliary power supplies, this MOSFET can provide reliable switching control at high voltages. Although its maximum current is only 2A, it performs well in low-current applications.
4. **Small Voltage Converter**: FIR1N60BPG-VB is suitable for small voltage converters, especially in situations where high voltage drop is required. In such applications, the high withstand voltage and relatively high on-resistance of MOSFET do not affect its performance in low-power scenarios.
From the above application examples, it can be seen that FIR1N60BPG-VB is mainly suitable for high-voltage, low-power electronic applications, especially in scenarios that require high-voltage switching, low-power control and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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